Radiation effects on silicon Final report, Jun. 1, 1964 - May 31, 1965

Radiation effects on silicon - degradation of carrier lifetime in N and P type silicon samples exposed to 30 MeV electron irradiatio

Radiation effects on silicon solar cells Third monthly progress report, Mar. 1-31, 1962

Radiation effects on silicon solar cell

Radiation effects on silicon solar cells Fourth monthly progress report, Apr. 1-30, 1962

Radiation effects on silicon solar cell

Radiation effects on silicon second quarterly progress report, sep. 1 - nov. 30, 1964

Electron spin resonance measurements on P-doped silicon - vacancy phosphorus defec

Radiation effects on silicon third quarterly progress report, dec. 1, 1964 - feb. 28, 1965

Radiation effect on silicon - introduction rates of vacancy-phosphorus defect and divacancy in p-type material for solar cell applicatio

Radiation effects on silicon solar cells Final report, Dec. 1, 1961 - Dec. 31, 1962

Displacement defects in silicon solar cells by high energy electron irradiation using electron spin resonance, galvanometric, excess carrier lifetime, and infrared absorption measurement

Degeneracy Algorithm for Random Magnets

It has been known for a long time that the ground state problem of random magnets, e.g. random field Ising model (RFIM), can be mapped onto the max-flow/min-cut problem of transportation networks. I build on this approach, relying on the concept of residual graph, and design an algorithm that I prove to be exact for finding all the minimum cuts, i.e. the ground state degeneracy of these systems. I demonstrate that this algorithm is also relevant for the study of the ground state properties of the dilute Ising antiferromagnet in a constant field (DAFF) and interfaces in random bond magnets.Comment: 17 pages(Revtex), 8 Postscript figures(5color) to appear in Phys. Rev. E 58, December 1st (1998

Cloud-Chamber Observations of Some Unusual Neutral V Particles Having Light Secondaries

From six cloud-chamber photographs of unusual V0 decay events, the following conclusions are drawn: (1) there is a neutral V particle that decays into two particles lighter than κ mesons with a Q value too small to be consistent with a θ0(π, π, 214 Mev) particle; (2) some of these events cannot be explained in terms of the decay of a τ0(π0, π-, π+, Q∼80 Mev) particle; (3) these events can be explained by any one of a number of three-body decay schemes, but two different types of V particles must be postulated if two-body decays are assumed

Electron beam charging of insulators: A self-consistent flight-drift model

International audienceElectron beam irradiation and the self-consistent charge transport in bulk insulating samples are described by means of a new flight-drift model and an iterative computer simulation. Ballistic secondary electron and hole transport is followed by electron and hole drifts, their possible recombination and/or trapping in shallow and deep traps. The trap capture cross sections are the Poole-Frenkel-type temperature and field dependent. As a main result the spatial distributions of currents j(x,t), charges, the field F(x,t) and the potential slope V(x,t) are obtained in a self-consistent procedure as well as the time-dependent secondary electron emission rate sigma(t) and the surface potential V0(t) For bulk insulating samples the time-dependent distributions approach the final stationary state with j(x,t)=const=0 and sigma=1. Especially for low electron beam energies E0=4 keV the incorporation of mainly positive charges can be controlled by the potential VG of a vacuum grid in front of the target surface. For high beam energies E0=10, 20, and 30 keV high negative surface potentials V0=−4, −14, and −24 kV are obtained, respectively. Besides open nonconductive samples also positive ion-covered samples and targets with a conducting and grounded layer (metal or carbon) on the surface have been considered as used in environmental scanning electron microscopy and common SEM in order to prevent charging. Indeed, the potential distributions V(x) are considerably small in magnitude and do not affect the incident electron beam neither by retarding field effects in front of the surface nor within the bulk insulating sample. Thus the spatial scattering and excitation distributions are almost not affected