Compton, D. M. J.

Van Lint, V. A. J.

English

NASA Technical Reports Server

|G_aAL ATOMIC DIVISION
GENERAL D._4ICS CORPO_ATION
John Jay Hopkins Laboratory
for Pure and Applied Science
' N66-I0645
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BADIATION EFF_TS ON SILICON SOLAR CELLS
Third Monthly Progress Report Covering the Period
March 1 - 31, 1962
Work done by: Report written by:
GPO PRICE $ ,
D. M. J. Co.ton D.M.J. Compton
J. H. Earrity CFSTI PRICE(S)$ _ _ V.A.J. van Lint
H. Horiye
V. A. J. van Lint /_ t"_
E. G. Wikner Hard copy (HC) / ,
M. E. Wyatt ./.."_ J_
Microfiche (MF) c_.J " __ -
If 653 July 65 i
_ls Is aa trJonss_ impress ,'el_,'t,-pr_ps_ by *_e Oeaez,81 At,c_e mvisicm of
OmersA i_el _mttcm under the comtmct destKnated be/or for suizdtt, al
to the aoatrao_.3a8 qpmc7 tot" Intorsatloa Ir_Iposes G_kY. The result8 an4 4sis
ss:r be prel/a/as_ or t_tsttve sa4 therefore ar_. subJ_t to rev/#Loa or eorre_-
tton_ M_ILsm_0_ ns_r_tatn l_teAtsble mst_rLaA on _toh imte_t al_lZ_atLoM
have not )It been /_LI_ by _r_l i)_saLes-CozTomttoa or bY the eontmet_l_
sEsne¥_ _n4 turthez, 4ListrLbutL_ of tbls z_port _ not be oa4e vtthout t_e
prLor appmml ot the coatrs_t_ sSe_ snd0ene_ Atcmae.
Project 25_8.O0
National Aeronautics and Space Adminlstratlon
Contract NQ. NA87-91 April 9, 1962
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1988001358
https://ntrs.nasa.gov/search.jsp?R=19660001356 2020-03-16T21:58:35+00:00Z
This monthly report covers the fourth month of research on Contract
Nc. NAS7-91, Eadiation Effects on Silicon. During this periodfthe prepara-
tlons for the irradiation experiments have been continued. Samples of
n-type silicon with phosphorus doping, both floating-zone and pulled
material, have been prepared for accelerator irradiations.1 It would have
been possible to perform irradiations on a sample for infrared spectroscopy,
but it was decided first to irradiate other samples to measure Hall
coefficient so that an irradiation duration could be determined which
would remove roughly 75% of the carriers in the sample to be used for
infrared studies.
_The data has been reduced from one sample of pulled silicon, which
o
was irradiated at room temperature and on which the carrier lifetime was_
measured as a function of temperature before, during and after irradiation.
The temperature dependence of the lifetime after irradiation indicates a
slope with an activation energy of 0._6 ev, in reasonable agreemeat with
the activation energy for the A cente
_. IAm analysis has also been performed to predict the temperature
dependence of the Hall coefficient, carrier mobility dud lifetime for au
assumed set of concentrations of dopauts and A centers.I These predicted: __
values will be compared with experimental results to evaluate the consis-
tency of the model of the A center creation. It is expected that the ne_T
quarterly _p0rt will devote a section to this analysis, as well as the
comparison with experimental results.
The evaluation of previously published experimental data is continuing
and will be reported in the next quarterly report.
An analysis of the dependence of carrier lifetime on various para-
meters, including the injection level, is being performed for application
to the experimental program. This analysis is based on the original work
by Shoc_ley and Read(1) and two articles by Nomura and Blakemore.(2'S)
The design of the ESR cavi.tyand the cryostat have now been completed.
The cavity is cylindrical and operates in the TEoIl mode. The degenerate
_14111mode is suppressed by using insulators between the cylindrical i
cavity and its end plates. The sample is placed on the axis of the_- ':
cylinder. A cavity of this design has been built _rom brass to study _he
effect of sample size on the cavity frequency and Q. The final _cavity _
p -
l me
1966001356-002
02
will be const_cted from Pyrex precision bore tubing, silvered on the
inside.
The cryostat is designed to enable irradiation, ESR measurements and
annealing to be c_rrled out in the same assembly. The sample is mounted
on a rod which can be moved up and down through a Wilson seal. At various
vertical positions are the irradiation station, the _ cavity, sad an
annealingroven. The cryostat will be made of stalkers 8reel and the
irradiation station will have thin stainless steel windows. Since this
region may become fel_omagmetic under irradiation at low temperature, the
EBB cavity will be a suitable distance away. The sample rod can be rotated
to allow the study of orientation effects. By raising the sample further
it can enter an oven where annealing can take place. Cooling during
irr_ation will be by flow of liquid past the sample to discourage
adherence of gas bubbles which can cause severe problems with heat trams-
fer.
PE_SON_EL
s
The following personnel have participate_ in this research program
L,
during this period:
D. M. J. Compton
J. H. Harrity .,
H. Horiye
V. A. J. vau Limt _
E. G. Wikner
M. E. W_t_
J
1966001356-003


Radiation effects on silicon solar cells Third monthly progress report, Mar. 1-31, 1962

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