Exponents and bounds for uniform spanning trees in d dimensions

Uniform spanning trees are a statistical model obtained by taking the set of all spanning trees on a given graph (such as a portion of a cubic lattice in d dimensions), with equal probability for each distinct tree. Some properties of such trees can be obtained in terms of the Laplacian matrix on the graph, by using Grassmann integrals. We use this to obtain exact exponents that bound those for the power-law decay of the probability that k distinct branches of the tree pass close to each of two distinct points, as the size of the lattice tends to infinity.Comment: 5 pages. v2: references added. v3: closed form results can be extended slightly (thanks to C. Tanguy). v4: revisions, and a figure adde

Radiation effects on silicon second quarterly progress report, sep. 1 - nov. 30, 1964

Electron spin resonance measurements on P-doped silicon - vacancy phosphorus defec

Full counting statistics of chaotic cavities with many open channels

Explicit formulas are obtained for all moments and for all cumulants of the electric current through a quantum chaotic cavity attached to two ideal leads, thus providing the full counting statistics for this type of system. The approach is based on random matrix theory, and is valid in the limit when both leads have many open channels. For an arbitrary number of open channels we present the third cumulant and an example of non-linear statistics.Comment: 4 pages, no figures; v2-added references; typos correcte

On the duality relation for correlation functions of the Potts model

We prove a recent conjecture on the duality relation for correlation functions of the Potts model for boundary spins of a planar lattice. Specifically, we deduce the explicit expression for the duality of the n-site correlation functions, and establish sum rule identities in the form of the M\"obius inversion of a partially ordered set. The strategy of the proof is by first formulating the problem for the more general chiral Potts model. The extension of our consideration to the many-component Potts models is also given.Comment: 17 pages in RevTex, 5 figures, submitted to J. Phys.

Radiation effects on silicon solar cells Final report, Dec. 1, 1961 - Dec. 31, 1962

Displacement defects in silicon solar cells by high energy electron irradiation using electron spin resonance, galvanometric, excess carrier lifetime, and infrared absorption measurement

Properties of dense partially random graphs

We study the properties of random graphs where for each vertex a {\it neighbourhood} has been previously defined. The probability of an edge joining two vertices depends on whether the vertices are neighbours or not, as happens in Small World Graphs (SWGs). But we consider the case where the average degree of each node is of order of the size of the graph (unlike SWGs, which are sparse). This allows us to calculate the mean distance and clustering, that are qualitatively similar (although not in such a dramatic scale range) to the case of SWGs. We also obtain analytically the distribution of eigenvalues of the corresponding adjacency matrices. This distribution is discrete for large eigenvalues and continuous for small eigenvalues. The continuous part of the distribution follows a semicircle law, whose width is proportional to the "disorder" of the graph, whereas the discrete part is simply a rescaling of the spectrum of the substrate. We apply our results to the calculation of the mixing rate and the synchronizability threshold.Comment: 14 pages. To be published in Physical Review

Maximum principle and mutation thresholds for four-letter sequence evolution

A four-state mutation-selection model for the evolution of populations of DNA-sequences is investigated with particular interest in the phenomenon of error thresholds. The mutation model considered is the Kimura 3ST mutation scheme, fitness functions, which determine the selection process, come from the permutation-invariant class. Error thresholds can be found for various fitness functions, the phase diagrams are more interesting than for equivalent two-state models. Results for (small) finite sequence lengths are compared with those for infinite sequence length, obtained via a maximum principle that is equivalent to the principle of minimal free energy in physics.Comment: 25 pages, 16 figure

Complete Solving for Explicit Evaluation of Gauss Sums in the Index 2 Case

Let $p$ be a prime number, $q=p^f$ for some positive integer $f$, $N$ be a positive integer such that $\gcd(N,p)=1$, and let \k be a primitive multiplicative character of order $N$ over finite field \fq. This paper studies the problem of explicit evaluation of Gauss sums in "\textsl{index 2 case}" (i.e. f=\f{\p(N)}{2}=[\zn:\pp], where \p(\cd) is Euler function). Firstly, the classification of the Gauss sums in index 2 case is presented. Then, the explicit evaluation of Gauss sums G(\k^\la) (1\laN-1) in index 2 case with order $N$ being general even integer (i.e. N=2^{r}\cd N_0 where $r,N_0$ are positive integers and $N_03$ is odd.) is obtained. Thus, the problem of explicit evaluation of Gauss sums in index 2 case is completely solved

Sibling Rivalry among Paralogs Promotes Evolution of the Human Brain

Geneticists have long sought to identify the genetic changes that made us human, but pinpointing the functionally relevant changes has been challenging. Two papers in this issue suggest that partial duplication of SRGAP2, producing an incomplete protein that antagonizes the original, contributed to human brain evolution

Electron beam charging of insulators: A self-consistent flight-drift model

International audienceElectron beam irradiation and the self-consistent charge transport in bulk insulating samples are described by means of a new flight-drift model and an iterative computer simulation. Ballistic secondary electron and hole transport is followed by electron and hole drifts, their possible recombination and/or trapping in shallow and deep traps. The trap capture cross sections are the Poole-Frenkel-type temperature and field dependent. As a main result the spatial distributions of currents j(x,t), charges, the field F(x,t) and the potential slope V(x,t) are obtained in a self-consistent procedure as well as the time-dependent secondary electron emission rate sigma(t) and the surface potential V0(t) For bulk insulating samples the time-dependent distributions approach the final stationary state with j(x,t)=const=0 and sigma=1. Especially for low electron beam energies E0=4 keV the incorporation of mainly positive charges can be controlled by the potential VG of a vacuum grid in front of the target surface. For high beam energies E0=10, 20, and 30 keV high negative surface potentials V0=−4, −14, and −24 kV are obtained, respectively. Besides open nonconductive samples also positive ion-covered samples and targets with a conducting and grounded layer (metal or carbon) on the surface have been considered as used in environmental scanning electron microscopy and common SEM in order to prevent charging. Indeed, the potential distributions V(x) are considerably small in magnitude and do not affect the incident electron beam neither by retarding field effects in front of the surface nor within the bulk insulating sample. Thus the spatial scattering and excitation distributions are almost not affected