Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler

We report on a heterogeneously integrated InP/silicon-on-insulator (SOI) laser source realized through divinylsiloxane-bis-benzocyclobutene (DVS-BCB) wafer bonding. The hybrid lasers present several new features. The III-V waveguide has a width of only 1.7 mu m, reducing the power consumption of the device. The silicon waveguide thickness is 400 nm, compatible with high-performance modulator designs and allowing efficient coupling to a standard 220-nm high index contrast silicon waveguide layer. In order to make the mode coupling efficient, both the III-V waveguide and silicon waveguide are tapered, with a tip width for the III-V waveguide of around 800 nm. These new features lead to good laser performance: a lasing threshold as low as 30 mA and an output power of more than 4 mW at room temperature in continuous-wave operation regime. Continuous wave lasing up to 70 degrees C is obtained

Dilute nitride vertical-cavity gate for all-optical logic at 1.3 µm

The authors report on the design and performance of an all-optical vertical-cavity semi-conductor gate (VCSG) based on dilute nitride (GaInNAs/GaAs) quantum wells, proposed for performing AND/OR or NAND/NOR logic functions. In particular, the authors analyse the effect of non-linear refractive index variation on the overall non-linear characteristic of the device. Compared to typical InP-based non-linear gates GaAs-based devices incorporating dilute nitride active regions are a step forward towards reducing the fabrication complexity and relaxing the design constrains by employing high-quality GaAs/AlAs distributed Bragg reflectors. The authors develop a predictive model of VCSG relying on numerical simulation. Trade-off between the operation bandwidth and the modulation depth is found out associated to a variation of the refractive index for different optical injection conditions

Experimental and theoretical investigation of mode size effects on tilted facet reflectivity

International audienc

Network-embedded self-tuning cavity for WDM-PON transmitter

A network-embedded self-tuning cavity is proved in wavelength division multiplexed passive optical network transmission over 32 channels. The external source-less topology takes advantage of a reflective element at the remote node and a reflective semiconductor optical amplifier at the optical network unit to establish a distribution-fiber based cavity. The bit error rate performance of up to 5-km cavities is presented with two optical network units simultaneously operating and with downstream signal co presence. The experimental analysis at 1.25 Gb/s provides an evaluation of polarization dependences when exploiting low polarization dependent gain reflective semiconductor optical amplifiers with 25-km and 50-km standard single mode fiber transmission

Performance Comparison of Single- and Two-Section RSOAs in Radio-Over-Fiber Links

A performance comparison of single- and two-section reflective semiconductor optical amplifiers (RSOAs), used as remote modulators for the transport of IEEE 802.11n type signals at 0.3 GHz is reported. The two-section RSOA yields higher link gain and lower output noise than the single-section RSOA while retaining high output power. It provides a wide operational dynamic range and high tolerable path loss

Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through adhesive die to wafer bonding

An InP/Silicon hybrid laser based on double taper adiabatic mode transfer and BCB bonding is demonstrated, exhibiting nearly 1 mW output power at room temperature in pulsed operation regime. Such a laser enables potentially a low threshold current and a high power conversion efficiency

Passive and electro-optic polymer photonics and InP electronics integration for multi-flow terabit transceivers at edge SDN switches and data-center gateways

Within PANTHER research project, we aim to develop multi-rate, multi-format, multi-reach and multi-flow terabit transceivers for data-center gateways, having the capability of flexibly controlling this enormous capacity and distributing it among independent optical flows. To this end, we combine electro-optic with passive polymers and we develop a novel photonic integration platform with unprecedented potential for high-speed modulation and optical functionality on-chip. We also rely on the combination of polymers with InP elements and the use of InP-DHBT electronics for driving circuits based on 3-bit power-DACs and high-speed TIA arrays. Using 3D integration techniques, we also aim to integrate these components in system-in-package transceivers capable of operation at 64 Gbaud, operation with formats up to DP-64-QAM and flexibility in the handling of multiple optical flows on-chip. In this paper, we present the system level vision and the technical approach for the development of these modules, and we present the concept for a thin software layer that will control the parameters of the transceivers and will extend the SDN hierarchy down to the flexible optical transport layer

Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K

Electroluminescence from GaInSb/AlGaInSb type I quantum well diode lasers, grown on GaAs, has been investigated as a function of strain in the quantum wells. Lasing was observed, in pulsed operation, up to temperatures of 161, 208, 219, and 202 K for structures containing 0.55%, 0.62%, 0.78%, and 1.1% strain, respectively, with lasing occurring at ~3.3 μm at 200 K for the 1.1% structureElectroluminescence from GaInSb/AlGaInSb type I quantum well diode lasers, grown on GaAs, has been investigated as a function of strain in the quantum wells. Lasing was observed, in pulsed operation, up to temperatures of 161, 208, 219, and 202 K for structures containing 0.55%, 0.62%, 0.78%, and 1.1% strain, respectively, with lasing occurring at ~3.3 μm at 200 K for the 1.1% structur