1,279 research outputs found

    The Infrared Extinction Law at Extreme Depth in a Dark Cloud Core

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    We combined sensitive near-infrared data obtained with ground-based imagers on the ESO NTT and VLT telescopes with space mid-infrared data acquired with the IRAC imager on the Spitzer Space Telescope to calculate the extinction law A_\lambda/A_K as a function of \lambda between 1.25 and 7.76 micron to an unprecedented depth in Barnard 59, a star forming, dense core located in the Pipe Nebula. The ratios A_\lambda/A_K were calculated from the slopes of the distributions of sources in color-color diagrams \lambda-K vs. H-K. The distributions in the color-color diagrams are fit well with single slopes to extinction levels of A_K ~ 7 (A_V ~ 59 mag). Consequently, there appears to be no significant variation of the extinction law with depth through the B59 line of sight. However, when slopes are translated into the relative extinction coefficients A_\lambda/A_K, we find an extinction law which departs from the simple extrapolation of the near-infrared power law extinction curve, and agrees more closely with a dust extinction model for a cloud with a total to selective absorption R_V=5.5 and a grain size distribution favoring larger grains than those in the diffuse ISM. Thus, the difference we observe could be possibly due to the effect of grain growth in denser regions. Finally, the slopes in our diagrams are somewhat less steep than those from the study of Indebetouw et al. (2005) for clouds with lower column densities, and this indicates that the extinction law between 3 and 8 micron might vary slightly as a function of environment.Comment: 22 pages manuscript, 4 figures (2 multipart), 1 tabl

    Perfil logístico de Colombia

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    El presente documento ofrece un estudio del perfil logístico de Colombia con la finalidad de dar a conocer el estado de arte de las ciudades, puertos e infraestructura principal para facilitar la toma de decisiones de los empresarios. Para el desarrollo de este trabajo se determinaron a partir de un análisis competitivo del país; las principales ciudades y puertos; logrando establecer un inventario de maquinaria y equipo e infraestructura logística; enmarcados en retos ya establecidos en las políticas públicas.This document provides a profile study logistics Colombia in order to present the state of art of the cities, ports and infrastructure in facilitating the decision making of managers. For the development of this work were determined from a competitive analysis of the country's major cities and ports, making an inventory of machinery and equipment and logistics infrastructure; framed challenges established in public policy

    LO-phonon assisted polariton lasing in a ZnO based microcavity

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    Polariton relaxation mechanisms are analysed experimentally and theoretically in a ZnO-based polariton laser. A minimum lasing threshold is obtained when the energy difference between the exciton reservoir and the bottom of the lower polariton branch is resonant with the LO phonon energy. Tuning off this resonance increases the threshold, and exciton-exciton scattering processes become involved in the polariton relaxation. These observations are qualitatively reproduced by simulations based on the numerical solution of the semi-classical Boltzmann equations

    Геофизические особенности Верхнеюрского разреза месторождений углеводородов Томской области

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    Использованы петрофизические уравнения и данные геофизических исследований скважин месторождений углеводородов Томской области. Выявлены петрофизические типы коллекторов горизонта Ю1 и геофизические особенности пород баженовской свиты в разрезах с разным типом коллекторов

    Patterned silicon substrates: a common platform for room temperature GaN and ZnO polariton lasers

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    A new platform for fabricating polariton lasers operating at room temperature is introduced: nitride-based distributed Bragg reflectors epitaxially grown on patterned silicon substrates. The patterning allows for an enhanced strain relaxation thereby enabling to stack a large number of crack-free AlN/AlGaN pairs and achieve cavity quality factors of several thousands with a large spatial homogeneity. GaN and ZnO active regions are epitaxially grown thereon and the cavities are completed with top dielectric Bragg reflectors. The two structures display strong-coupling and polariton lasing at room temperature and constitute an intermediate step in the way towards integrated polariton devices

    Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers

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    We present a method, based on positron annihilation spectroscopy, to obtain information on the defect depth profile of layers grown over high-quality substrates. We have applied the method to the case of ZnO layers grown on sapphire, but the method can be very easily generalized to other heterostructures (homostructures) where the positron mean diffusion length is small enough. Applying the method to the ratio of W and S parameters obtained from Doppler broadening measurements, W∕S plots, it is possible to determine the thickness of the layer and the defect profile in the layer, when mainly one defect trapping positron is contributing to positron trapping at the measurement temperature. Indeed, the quality of such characterization is very important for potential technological applications of the layer.Peer reviewe

    Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness

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    Positron annihilation spectroscopy has been used to study the vacancy-type defects produced in films grown by metalorganic chemical vapor deposition on different sapphire orientations. Zn vacancies are the defects controlling the positron annihilation spectra at room temperature. Close to the interface (<500nm) their concentration depends on the surface plane of sapphire over which the ZnO film has been grown. The Zn vacancy content in the film decreases with thickness, and above 1μm it is independent of the substrate orientation.Peer reviewe

    Rheology of distorted nematic liquid crystals

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    We use lattice Boltzmann simulations of the Beris--Edwards formulation of nematodynamics to probe the response of a nematic liquid crystal with conflicting anchoring at the boundaries under shear and Poiseuille flow. The geometry we focus on is that of the hybrid aligned nematic (HAN) cell, common in devices. In the nematic phase, backflow effects resulting from the elastic distortion in the director field render the velocity profile strongly non-Newtonian and asymmetric. As the transition to the isotropic phase is approached, these effects become progressively weaker. If the fluid is heated just above the transition point, however, another asymmetry appears, in the dynamics of shear band formation.Comment: 7 pages, 4 figures. Accepted for publication in Europhys. Let

    On the interplay of point defects and Cd in non-polar ZnCdO films

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    Non-polar ZnCdO films, grown over m- and r-sapphire with a Cd concentration ranging between 0.8% and 5%, have been studied by means of slow positron annihilation spectroscopy (PAS) combined with chemical depth profiling by secondary ion mass spectroscopy and Rutherford back-scattering. Vacancy clusters and Zn vacancies with concentrations up to 10exp17 cm−3 and 10exp18 cm−3, respectively, have been measured inside the films. Secondary ion mass spectroscopy results show that most Cd stays inside the ZnCdO film but the diffused atoms can penetrate up to 1.3 μm inside the ZnO buffer. PAS results give an insight to the structure of the meta-stable ZnCdO above the thermodynamical solubility limit of 2%. A correlation between the concentration of vacancy clusters and Cd has been measured. The concentration of Zn vacancies is one order of magnitude larger than in as-grown non-polar ZnO films and the vacancy cluster are, at least partly, created by the aggregation of smaller Zn vacancy related defects. The Zn vacancy related defects and the vacancy clusters accumulate around the Cd atoms as a way to release the strain induced by the substitutional CdZn in the ZnO crystal.Peer reviewe
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