17 research outputs found

    VUV thin films, chapter 7

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    The application of thin film technology to the vacuum ultraviolet (VUV) wavelength region from 120 nm to 230 nm has not been fully exploited in the past because of absorption effects which complicate the accurate determination of the optical functions of dielectric materials. The problem therefore reduces to that of determining the real and imaginary parts of a complex optical function, namely the frequency dependent refractive index n and extinction coefficient k. We discuss techniques for the inverse retrieval of n and k for dielectric materials at VUV wavelengths from measurements of their reflectance and transmittance. Suitable substrate and film materials are identified for application in the VUV. Such applications include coatings for the fabrication of narrow and broadband filters and beamsplitters. The availability of such devices open the VUV regime to high resolution photometry, interferometry and polarimetry both for space based and laboratory applications. This chapter deals with the optics of absorbing multilayers, the determination of the optical functions for several useful materials, and the design of VUV multilayer stacks as applied to the design of narrow and broadband reflection and transmission filters and beamsplitters. Experimental techniques are discussed briefly, and several examples of the optical functions derived for selected materials are presented

    Multilayer thin film design for far ultraviolet polarizers using an induced transmission and absorption technique

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    An explanation of induced transmission for spectral regions excluding the far ultraviolet (FUV) is given to better understand how induced transmission and absorption can be used to design effective polarizers in the FUV spectral region. We achieve high s-polarization reflectance and a high degree of polarization (P equals (Rs-Rp)/(Rs+Rp)) by means of a MgF2/Al/MgF2 three layer structure on an opaque thick film of Al as the substrate. For example, our polarizer designed for the Lyman-alpha line (lambda equals 121.6 nm) has 87.95 percent reflectance for the s-polarization case and 0.43 percent for the p-polarization case, with a degree of polarization of 99.03 percent. If a double reflection polarizer is made with this design, it will have a degree of polarization of 99.99 percent and s-polarization throughput of 77.35 percent

    X ray, extreme and far ultraviolet optical thin films for space applications

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    Far and extreme ultraviolet optical thin film filters find many uses in space astronomy, space astrophysics, and space aeronomy. Spacebased spectrographs are used for studying emission and absorption features of the earth, planets, sun, stars, and the interstellar medium. Most of these spectrographs use transmission or reflection filters. This requirement has prompted a search for selective filtering coatings with high throughput in the FUV and EUV spectral region. Important progress toward the development of thin film filters with improved efficiency and stability has been made in recent years. The goal for this field is the minimization of absorption to get high throughput and enhancement of wavelength selection. The Optical Aeronomy Laboratory (OAL) at the University of Alabama in Huntsville has recently developed the technology to determine optical constants of bulk and film materials for wavelengths extending from x-rays (0.1 nm) to the FUV (200 nm), and several materials have been identified that were used for designs of various optical devices which previously have been restricted to space application in the visible and near infrared. A new design concept called the Pi-multilayer was introduced and applied to the design of optical coatings for wavelengths extending from x-rays to the FUV. Section 3 of this report explains the Pi-multilayer approach and demonstrates its application for the design and fabrication of the FUV coatings. Two layer Pi-stacks have been utilized for the design of reflection filters in the EUV wavelength range from 70 - 100 nm. In order to eliminate losses due to the low reflection of the imaging optics and increase throughput and out-of-band rejection of the EUV instrumentation we introduced a self-filtering camera concept. In the FUV region, MgF2 and LiF crystals are known to be birefringent. Transmission polarizers and quarterwave retarders made of MgF2 or LiF crystals are commercially available but the performances are poor. New techniques for the design of the EUV and FUV polarizers and quarterwave retarders are described in Section 5. X- and gamma-ray detectors rely on a measurement of the electron which is effected when a ray interacts with matter. The design of an x- and gamma-ray telescope to operate in a particular region of the spectrum is, therefore, largely dictated by the mechanism through which the rays interact. Energy selection and the focusing of the incident high energy rays can be achieved with spectrally selective high reflective multilayers. The design and spectral performance of narrowband reflective x-ray Pi-multilayers are presented in section 6

    A vacuum ultraviolet spectrophotometric system

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    The development of a vacuum ultraviolet spectrophotometric system for measuring transmittance and reflectance at variable angles is presented. Using various detectors and sources, the spectrophotometric system has been used for wavelengths from 80 nm to 300 nm with optical components up to 80 mm in diameter. The capability exists to make measurements through the visible range

    Design Of Nonpolarizing Achromatic Beam-Splitters With Dielectric Multilayer Coatings

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    Optical beamsplitters often consist of repeated pairs of high and low index quarter-wave layers. At oblique angles of incidence, such coatings typically have a fairly high polarization ratio. Reflectance, transmittance, and phase for the two orthogonal planes of polarization, s and p, are different in general. Here, we present the results of the design of all-dielectric beamsplitter coatings with very low polarization ratios. An initial sinusoidal refractive index profile, optimized with a refining computer program, yields a 50卤1% beamsplitter in the 450 to 650 nm wavelength range, with less than 0.5% (abs.) difference between the s and p reflectance in most of this interval. Matching the elements of the characteristic matrix of this design with those of a generic homogeneous multilayer stack yields the starting design A(HL)7HS for a reflectance to transmittance ratio of R:T = 50:50% and 30:70% beamsplitters, which are optimized for the 500 to 600 nm wavelength range and angles of incidence of 40掳, 50掳, and 60掳 using a computer program based on a damped least squares refining technique. The average deviation from the nominal beamsplitting ratio is less than 0.5% for all given design examples. The maximum deviations are about 2% in this wavelength range

    Reflective Filters Design for Self-Filtering Narrowband Ultraviolet Imaging Experiment Wide-Field Surveys (NUVIEWS) Project

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    We report the design of multilayer reflective filters for the self-filtering cameras of the NUVIEWS project. Wide angle self-filtering cameras were designed to image the C IV (154.9 nm) line emission, and H2 Lyman band fluorescence (centered at 161 nm) over a 20 deg x 30 deg field of view. A key element of the filter design includes the development of pi-multilayers optimized to provide maximum reflectance at 154.9 nm and 161 nm for the respective cameras without significant spectral sensitivity to the large cone angle of the incident radiation. We applied self-filtering concepts to design NUVIEWS telescope filters that are composed of three reflective mirrors and one folding mirror. The filters with narrowband widths of 6 and 8 rim at 154.9 and 161 nm, respectively, have net throughputs of more than 50 % with average blocking of out-of-band wavelengths better than 3 x 10(exp -4)%

    Design and fabrication of a reflection far ultraviolet polarizer and retarder

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    New methods have been developed for the design of a far ultraviolet multilayer reflection polarizer and retarder. A MgF2/Al/MgF2 three-layer structure deposited on a thick opaque Al film (substrate) is used for the design of polarizers and retarders. The induced transmission and absorption method is used for the design of a polarizer and layer-by-layer electric field calculation method is used for the design of a quarterwave retarder. In order to fabricate these designs in a conventional high vacuum chamber, we have to minimize the oxidation of the Al layers and somehow characterize the oxidized layer. X-ray photoelectron spectroscopy is used to investigate the amount and profile of oxidation. Depth profiling results and a seven layer oxidation model are presented

    Multilayer Thin Film Polarizer Design for Far Ultraviolet using Induced Transmission and Absorption Technique

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    Good theoretical designs of far ultraviolet polarizers have been reported using a MgF2/Al/MgF2 three layer structure on a thick Al layer as a substrate. The thicknesses were determined to induce transmission and absorption of p-polarized light. In these designs Al optical constants were used from films produced in ultrahigh vacuum (UHV: 10(exp -10) torr). Reflectance values for polarizers fabricated in a conventional high vacuum (p approx. 10(exp -6 torr)) using the UHV design parameters differed dramatically from the design predictions. Al is a highly reactive material and is oxidized even in a high vacuum chamber. In order to solve the problem other metals have been studied. It is found that a larger reflectance difference is closely related to higher amplitude and larger phase difference of Fresnel reflection coefficients between two polarizations at the boundary of MgF2/metal. It is also found that for one material a larger angle of incidence from the surface normal brings larger amplitude and phase difference. Be and Mo are found good materials to replace Al. Polarizers designed for 121.6 nm with Be at 60 deg and with Mo at 70 deg are shown as examples

    Filters for the International Solar Terrestrial Physics (ISTP) mission far ultraviolet imager

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    The far ultraviolet (FUV) imager for the International Solar Terrestrial Physics (ISTP) mission is designed to image four features of the aurora: O I lines at 130.4 nm and 135.6 nm and the N2 Lyman-Birge-Hopfield (LBH) bands between 140 nm - 160 nm (LBH long) and 160 nm - 180 nm (LBH long). In this paper we report the design and fabrication of narrow-band and broadband filters for the ISTP FUV imager. Narrow-band filters designed and fabricated for the O I lines have a bandwidth of less than 5 nm and a peak transmittance of 23.9 percent and 38.3 percent at 130.4 nm and 135.6 nm, respectively. Broadband filters designed and fabricated for LBH bands have the transmittance close to 60 percent. Blocking of out-of-band wavelengths for all filters is better than 5x10(exp -3) percent with the transmittance at 121.6 nm of less than 10(exp -6) percent

    Transparent conductive coatings in the far ultraviolet

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    In certain cases a space-borne optical instrument with a dielectric window requires a transparent conductive coating deposited on the window to remove the electrostatic charge collected due to the bombardment of ionized particles. Semiconductor and metal films are studied for use as transparent conductive coatings for the front window of far ultraviolet camera. Cr is found to be the best coating material. The theoretical search for the semiconductor and metal coating materials and experimental results for ITO and Cr films are reported
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