40 research outputs found
Electronic states in heterostructures formed by ultranarrow layers
Low-energy electronic states in heterosrtuctures formed by ultranarrow layer
(single or several monolayers thickness) are studied theoretically. The host
material is described within the effective mass approximation and effect of
ultranarrow layers is taken into account within the framework of the transfer
matrix approach. Using the current conservation requirement and the inversion
symmetry of ultranarrow layer, the transfer matrix is written through two
phenomenological parameters. The binding energy of localized state, the
reflection (transmission) coefficient for the single ultranarrow layer case,
and the energy spectrum of superlattice are determined by these parameters.
Spectral dependency of absorption in superlattice due to photoexcitation of
electrons from localized states into minibands is strongly dependent on the
ultranarrow layers characteristics. Such a dependency can be used for
verification of the transfer matrix parameters.Comment: 7 pages, 7 figure
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Microsecond-long lasing delays in thin P-clad InGaAs QW lasers
Microsecond-long lasing delays have been observed in wide-stripe, thin p-clad, InGaAs single quantum well (QW) lasers with ``thick`` p{sup +} cap layers. Computer modeling indicates that localized refractive index changes in the cap layer due to ohmic heating from the con- tact resistance may be the root cause
InAsP/AlGaInP/GaAs QD laser operating at âŒ770 nm
We present a study of metalorganic vapour phase epitaxy of ternary InAsP quantum dots in AlGaInP/GaAs for application in laser diodes. The properties of InAsP QD laser structures were compared with reference samples containing binary InP QDs. Based on X-ray diffraction, the molar fraction of arsenic in InAsP QDs was estimated to be ~25%. Room temperature liquid contact electro-luminescence measurements revealed a long wavelength shift of the InAsP QD emission to ~775 nm as compared with the InP QD emission at 716 nm and an increased full width at half maximum of the spontaneous emission (71 meV vs 50 meV). As cleaved, 4 mm long and 50 ”m wide InAsP QD lasers operated in a pulsed regime at room temperature at ~770 nm with a threshold current density of 155 A/cm and a maximum output optical power of at least 200 mW. The maximum operation temperature was at least 380 K
Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spectra, threshold currents and slope efficiencies) of the multi-wavelength devices are compared to those of as-grown devices and the differences are explained in terms of altered energy level spacing in the annealed quantum dots
Photonic quantum ring laser
We report a quantum ring-like toroidal cavity naturally formed in a
vertical-cavity-like active microdisk plane due to Rayleigh's band of
whispering gallery modes. The -dependent redshift and a square-law
property of microampere-range threshold currents down to 2 A are
consistent with a photonic quantum wire view, due to whispering gallery
mode-induced dimensional reduction.Comment: 4 pages, 5 figures, REVTEX, Submitted to Phys. Rev. Lett. 06/08/98,
revised 10/28/98, To appear in Phys. Rev. Lett., Vol. 82(3), Jan. 199
Analysis of a sprint ski race and associated laboratory determinants of world-class performance
This investigation was designed to analyze the time-trial (STT) in an international cross-country skiing sprint skating competition for (1) overall STT performance and relative contributions of time spent in different sections of terrain, (2) work rate and kinematics on uphill terrain, and (3) relationships to physiological and kinematic parameters while treadmill roller ski skating. Total time and times in nine different sections of terrain by 12 world-class male sprint skiers were determined, along with work rate and kinematics for one specific uphill section. In addition, peak oxygen uptake (VO2peak), gross efficiency (GE), peak speed (Vpeak), and kinematics in skating were measured. Times on the last two uphill and two final flat sections were correlated to overall STT performance (r = ~â0.80, P < 0.001). For the selected uphill section, speed was correlated to cycle length (r = â0.75, P < 0.01) and the estimated work rate was approximately 160% of peak aerobic power. VO2peak, GE, Vpeak, and peak cycle length were all correlated to STT performance (r = ~â0.85, P < 0.001). More specifically, VO2peak and GE were correlated to the last two uphill and two final flat section times, whereas Vpeak and peak cycle length were correlated to times in all uphill, flat, and curved sections except for the initial section (r = ~â0.80, P < 0.01). Performances on uphill and flat terrain in the latter part were the most significant determinants of overall STT performance. Peak oxygen uptake, efficiency, peak speed, and peak cycle length were strongly correlated to overall STT performance, as well as to performance in different sections of the race