Low-Power Redundant-Transition-Free TSPC Dual-Edge-Triggering Flip-Flop Using Single-Transistor-Clocked Buffer

In the modern graphics processing unit (GPU)/artificial intelligence (AI) era, flip-flop (FF) has become one of the most power-hungry blocks in processors. To address this issue, a novel single-phase-clock dual-edge-triggering (DET) FF using a single-transistor-clocked (STC) buffer (STCB) is proposed. The STCB uses a single-clocked transistor in the data sampling path, which completely removes clock redundant transitions (RTs) and internal RTs that exist in other DET designs. Verified by post-layout simulations in 22 nm fully depleted silicon on insulator (FD-SOI) CMOS, when operating at 10% switching activity, the proposed STC-DET outperforms prior state-of-the-art low-power DET in power consumption by 14% and 9.5%, at 0.4 and 0.8 V, respectively. It also achieves the lowest power-delay-product (PDP) among the DETs

Numerical study on characteristics of combustion and pollutant formation in a reheating furnace

Energy consumption of fuel-fired industrial furnace accounts for about 23% of the national total energy consumption every year in China. Meanwhile, the reduction of combustion-generated pollutants in furnace has become very important due to the stringent environment laws and policy introduced in the recent years. It is therefore a great challenge for the researchers to simultaneously enhance the fuel efficiency of the furnace while controlling the pollution emission. In this study, a transient three- dimensional mathematical combustion model coupled with heat transfer and pollution formation model of a walking-beam-type reheating furnace has been developed to simulate the essential combustion, and pollution distribution in the furnace. Based on this model, considering nitrogen oxides formation mechanism, sensitivity study has been carried out to investigate the influence of fuel flow rate, air-fuel ratio on the resultant concentration of nitrogen oxides in the flue gas. The results of present study provide valuable information for improving the thermal efficiency and pollutant control of reheating furnace

A CMOS Fully Integrated 120-Gbps RF-64QAM F-band Transmitter with an On-Chip Antenna for 6G Wireless Communication

This paper presents a single-chip bits-to-antenna transmitter (TX) for >100 Gbps in 45nm CMOS SOI. The construction of the 64QAM constellation is achieved directly in the RF domain by utilizing three QPSK sub-TXs with weighted amplitude. This method significantly reduces the need to address power amplifier nonlinear effects in high-order modulation, thereby creating room for TX enhancements in both bandwidth and output power. To further improve TX performance, multi-step phase alignment strategies, and a local oscillator leakage suppression technique have been incorporated. With 40-GHz RF bandwidth, the RF-64QAM TX prototype is able to achieve a measured data rate of 120 Gbps with 15dBm effective isotropic radiated power (EIRP)

Iridium- and Rhodium-Catalyzed C-H Activation and Formyl Alkynylation of Benzaldehydes under Chelation-Assistance

Mild and efficient synthesis of ynones via Ir(III)- and Rh(III)-catalyzed, chelation-assisted formyl C-H alkynylation of benzaldehydes has been achieved using hypervalent iodine-alkyne reagents. Rhodium and iridium catalysis exhibited complementary substrate scope

Rh(III)-Catalyzed C-H Alkylation of Arenes Using Alkylboron Reagents

Rhodium(III)-catalyzed direct alkylation of arenes using commercially available alkyltrifluoroborates is disclosed. Oximes, heteroarenes, azomethines, N-nitrosoamines, and amides are viable directing groups to entail this transformation. The alkyl group in the boron reagent can be extended to primary alkyls, benzyl, and cycloalkyls, and the reaction proceeded with controllable mono- and dialkylation selectivity when both ortho C-H sites are accessible

Access to Indenones by Rhodium(III)-Catalyzed C–H Annulation of Arylnitrones with Internal Alkynes

Under redox-neutral conditions, rhodium(III)-catalyzed C–H annulation of <i>N</i>-<i>tert</i>-butyl-α-arylnitrones with internal alkynes has been realized for the synthesis of indenones under mild conditions. This reaction proceeded in moderate to high yields and with good functional group tolerance

Rhodium-Catalyzed C-S and C-N Functionalization of Arenes: Combination of C-H Activation and Hypervalent Iodine Chemistry

Rhodium-catalyzed sulfonylation, thioetherification, thiocyanation, and other heterofunctionalizations of arenes bearing a heterocyclic directing group have been realized. The reaction proceeds by initial RhIII-catalyzed C-H hyperiodination of arene at room temperature followed by uncatalyzed nucleophilic functionalization. A diaryliodonium salt is isolated as an intermediate, which represents umpolung of the arene substrate, in contrast to previous studies that suggested umpolung of the coupling partner

Palladium Catalyzed Asymmetric Hydrophosphination of Internal Alkynes: Access to Phosphine-Functionalized Axially Chiral Olefins

Palladium-catalyzed unprecedented atroposelective hydrophosphination of sterically hindered internal alkynes with secondary phosphines has been realized, affording C-N axially chiral trisubstituted olefins (vinylphosphines) in excellent regioselectivity, (E)-selectivity, and enantioselectivity. The axial chirality was constructed via integration of hydrophosphination and dynamic kinetic transformation of the alkynes, with both symmetrical and nonsymmetrical secondary phosphines being applicable