Excited quantum Hall effect: enantiomorphic flat bands in a Yin-Yang Kagome lattice

Quantum Hall effect (QHE) is one of the most fruitful research topics in condensed-matter physics. Ordinarily, the QHE manifests in a ground state with time-reversal symmetry broken by magnetization to carry a quantized chiral edge conductivity around a two-dimensional insulating bulk. We propose a theoretical concept and model of non-equilibrium excited-state QHE (EQHE) without intrinsic magnetization. It arises from circularly polarized photoexcitation between two enantiomorphic flat bands of opposite chirality, each supporting originally a helical topological insulating state hosted in a Yin-Yang Kagome lattice. The chirality of its edge state can be reversed by the handedness of light, instead of the direction of magnetization as in the conventional quantum (anomalous) Hall effect, offering a simple switching mechanism for quantum devices. Implications and realization of EQHE in real materials are discussed

Higher-dimensional spin selectivity in chiral crystals

This study aims to investigate the interplay between chiral-induced spin-orbit coupling along the screw axis and antisymmetric spin-orbit coupling (ASOC) in the normal plane within a chiral crystal, using both general model analysis and first-principles simulations of InSeI, a chiral van der Waals crystal. While chiral molecules of light atoms typically exhibit spin selectivity only along the screw axis, chiral crystals with heavier atoms can have strong ASOC effects that influence spin-momentum locking in all directions. The resulting phase diagram of spin texture shows the potential for controlling phase transition and flipping spin by reducing symmetry through surface cleavage, thickness reduction or strain. We also experimentally synthesized high-quality InSeI crystals of the thermodynamically stable achiral analogue which showed exposed (110) facets corresponding to single-handed helices to demonstrate the potential of material realization for higher-dimensional spin selectivity in the development of spintronic devices

Higher-order Topological and Nodal Superconductors MS (M = Nb and Ta) Transition-metal Sulfides

Intrinsic topological superconducting materials are exotic and vital to develop the next-generation topological superconducting devices, topological quantum calculations, and quantum information technologies. Here, we predict the topological and nodal superconductivity of MS (M = Nb and Ta) transition-metal sulfides by using the density functional theory for superconductors combining with the symmetry indicators. We reveal their higher-order topology nature with an index of Z4 = 2. These materials have a higher Tc than the Nb or Ta metal superconductors due to their flat-band and strong electron-phonon coupling nature. Electron doping and lighter isotopes can effectively enhance the Tc. Our findings show that the MS (M = Nb and Ta) systems can be new platforms to study exotic physics in the higher-order topological superconductors, and provide a theoretical support to utilize them as the topological superconducting devices in the field of advanced topological quantum calculations and information technologies.Comment: 5 pages, 3 figure

Controllable Strain-driven Topological Phase Transition and Dominant Surface State Transport in High-Quality HfTe5 Samples

Controlling materials to create and tune topological phases of matter could potentially be used to explore new phases of topological quantum matter and to create novel devices where the carriers are topologically protected. It has been demonstrated that a trivial insulator can be converted into a topological state by modulating the spin-orbit interaction or the crystal lattice. However, there are limited methods to controllably and efficiently tune the crystal lattice and at the same time perform electronic measurements at cryogenic temperatures. Here, we use large controllable strain to demonstrate the topological phase transition from a weak topological insulator phase to a strong topological insulator phase in high-quality HfTe5 samples. After applying high strain to HfTe5 and converting it into a strong topological insulator, we found that the sample's resistivity increased by more than two orders of magnitude (24,000%) and that the electronic transport is dominated by the topological surface states at cryogenic temperatures. Our findings show that HfTe5 is an ideal material for engineering topological properties, and it could be generalized to study topological phase transitions in van der Waals materials and heterostructures. These results can pave the way to create novel devices with applications ranging from spintronics to fault-tolerant topologically protected quantum computers

Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials

Confining materials to two-dimensional forms changes the behavior of electrons and enables new devices. However, most materials are challenging to produce as uniform thin crystals. Here, we present a new synthesis approach where crystals are grown in a nanoscale mold defined by atomically-flat van der Waals (vdW) materials. By heating and compressing bismuth in a vdW mold made of hexagonal boron nitride (hBN), we grow ultraflat bismuth crystals less than 10 nanometers thick. Due to quantum confinement, the bismuth bulk states are gapped, isolating intrinsic Rashba surface states for transport studies. The vdW-molded bismuth shows exceptional electronic transport, enabling the observation of Shubnikov-de Haas quantum oscillations originating from the (111) surface state Landau levels, which have eluded previous studies. By measuring the gate-dependent magnetoresistance, we observe multi-carrier quantum oscillations and Landau level splitting, with features originating from both the top and bottom surfaces. Our vdW-mold growth technique establishes a platform for electronic studies and control of bismuth's Rashba surface states and topological boundary modes. Beyond bismuth, the vdW-molding approach provides a low-cost way to synthesize ultrathin crystals and directly integrate them into a vdW heterostructure

Enhanced electrical and thermal conductivities of 3D-SiC(rGO, G x ) PDCs based on polycarbosilane-vinyltriethoxysilane-graphene oxide (PCS-VTES-GO) precursor containing graphene fillers

Abstract(#br)Lightweight 3D-SiC(rGO, G x ) PDCs were fabricated from polycarbosilane-vinyltriethoxysilane-graphene oxide (PCS-VTES-GO) precursor added by different amounts of graphene fillers via direct cold molding and pyrolysis at 1400 °C in an easy manner. Results reveal that SiC(rGO, G x ) PDCs consist of β-SiC nanocrystals homogeneously embedded within amorphous SiO x C y /C free , and graphene is well compatible with SiO x C y /C free for void-free bonded interface, efficiently delaying decomposition of SiO x C y phase into β-SiC. The nanocomposite structure provides an ingenious strategy for constructing complexes with good integrity, high ceramic yield, excellent thermal stability, high electrical and thermal conductivities. This improvement is primarily attributed to the presence of graphene with considerably increasing electric-charge carriers and wider phonon-channel. Such 3D-SiC(rGO, G 20% ) PDCs possess satisfying hardness (12.02 GPa), high electrical conductivity (23.82 S cm −1 ) and thermal conductivity (7.47 W m −1 K −1 ), which make them attractive candidates for microelectromechanical systems (MEMS) devices, energy storage/conversion systems and high precision components, etc

Remembering the City: Changing Conceptions of Community in Urban China

Adopting complimentary integrative research methodologies, this article examines changing conceptions of community amongst urban residents within the city of Suzhou, Jiangsu province, China. Whilst the impact of urban transformation from a macro-perspective, deploying large scale quantitative measures to capture resident perceptions within China’s mega-cities, has been addressed, there is something of a scholarly lacuna that adopts a micro-perspective to explore the nation-state’s smaller developing cities. Thus, through local residents’ past memories, ‘everyday’ experiences of (former) urban communities, and reflections on a particular way of life, we focus upon the subjective/affective meanings and memories attached to processes of urban change. We place emphasis on the manner in which residents make sense of socio-spatial transformations in relation to the (re)making of community, local social interaction, and a sense of belonging. Discussion centres on the affective and embodied notions of a particular way of life in (older) communities; sensory performances that were deemed difficult to replicate within modern development zones and the broader field of contemporary Chinese society