294 research outputs found

    Domain walls of ferroelectric BaTiO3 within the Ginzburg-Landau-Devonshire phenomenological model

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    Mechanically compatible and electrically neutral domain walls in tetragonal, orthorhombic and rhombohedral ferroelectric phases of BaTiO3 are systematically investigated in the framework of the phenomenological Ginzburg-Landau-Devonshire (GLD) model with parameters of Ref. [Hlinka and Marton, Phys. Rev. 74, 104104 (2006)]. Polarization and strain profiles within domain walls are calculated numerically and within an approximation leading to the quasi-one-dimensional analytic solutions applied previously to the ferroelectric walls of the tetragonal phase [W. Cao and L.E. Cross, Phys. Rev. 44, 5 (1991)]. Domain wall thicknesses and energy densities are estimated for all mechanically compatible and electrically neutral domain wall species in the entire temperature range of ferroelectric phases. The model suggests that the lowest energy walls in the orthorhombic phase of BaTiO3 are the 90-degree and 60-degree walls. In the rhombohedral phase, the lowest energy walls are the 71-degree and 109-degree walls. All these ferroelastic walls have thickness below 1 nm except for the 90-degree wall in the tetragonal phase and the 60-degree S-wall in the orthorhombic phase, for which the larger thickness of the order of 5 nm was found. The antiparallel walls of the rhombohedral phase have largest energy and thus they are unlikely to occur. The calculation indicates that the lowest energy structure of the 109-degree wall and few other domain walls in the orthorhombic and rhombohedral phases resemble Bloch-like walls known from magnetism.Comment: 12 pages, 9 figure

    Comment on ``Elastic Stabilization of a Single-Domain Ferroelectric State in Nanoscale Capacitors and Tunnel Junctions" [N.A. Pertsev and H. Kohlstedt, Phys. Rev. Lett. 98, 257603 (2007).]

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    In a recent Letter [N.A. Pertsev and H. Kohlstedt, Phys. Rev. Lett. 98, 257603 (2007)] the authors claim that "even nanoscale capacitors and tunnel junctions may have out of plane polarization sufficient for memory applications." Here we show in an elementary way that this conclusion is not substantiated by their calculations and that they should have come to the opposite conclusion within their approximations.Comment: 2 pages, no figure

    Correlation Between Structure And C-Afm Contrast Of 180-Degree Domain Walls In Rhombohedral Bati03

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    Using Landau-Ginzburg-Devonshire theory we describe 180-degree domain wall structure, intrinsic energy and carrier accumulation in rhombohedral phase of BaTiO3 as a function of the wall orientation and flexoelectric coupling strength. Two types of domain wall structures (phases of the wall) exist depending on the wall orientation. The low-energy 'achiral' phase occurs in the vicinity of the {110} wall orientation and has odd polarization profile invariant with respect to inversion about the wall center. The second 'chiral' phase occurs around {211} wall orientations and corresponds to mixed parity domain walls that may be of left-handed or right-handed chirality. The transformation between the phases is abrupt, accompanied with 20-30% change of the domain wall thickness and can happen at fixed wall orientation with temperature change. We suggest that the phase transition may be detected through domain wall thickness change or by c-AFM. The structure of the domain wall is correlated to its conductivity through polarization component normal to the domain wall, which causes free carriers accumulation. Depending on the temperature and flexoelectric coupling strength relative conductivity of the wall becomes at least one order of magnitude higher than in the single-domain region, creating c-AFM contrast enhancement pronounced and detectable.Comment: 31 pages, 10 figures, Supplementary material

    Landau-Ginzburg-Devonshire theory for electromechanical hysteresis loop formation in piezoresponse force microscopy of thin films

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    Electromechanical hysteresis loop formation in piezoresponse force microscopy of thin ferroelectric films is studied with special emphasis on the effects of tip size and film thickness, as well as dependence on the tip voltage frequency. Here, we use a combination of Landau-Ginzburg-Devonshire (LGD) theory for the description of the local polarization reversal with decoupling approximation for the calculation of the local piezoresponse loops shape, coercive voltages and amplitude. LGD approach enables addressing both thermodynamics and kinetics of hysteresis loop formation. In contrast to the "rigid" ferroelectric approximation, this approach allows for the piezoelectric tensor components dependence on the ferroelectric polarization and dielectric permittivity. This model rationalizes the non-classical shape of the dynamic piezoelectric force microscopy (PFM) loops.Comment: 23 pages, 5 figures, 1 appendix,to be submitted to J. Appl. Phy

    Domain wall conduction in multiaxial ferroelectrics

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    The conductance of domain wall structures consisting of either stripes or cylindrical domains in multi-axial ferroelectric-semiconductors is analyzed. The effects of the domain size, wall tilt and curvature, on charge accumulation, are analyzed using the Landau-Ginsburg Devonshire (LGD) theory for polarization combined with Poisson equation for charge distributions. Both the classical ferroelectric parameters including expansion coefficients in 2-4-6 Landau potential and gradient terms, as well as flexoelectric coupling, inhomogeneous elastic strains and electrostriction are included in the present analysis. Spatial distributions of the ionized donors, free electrons and holes were found self-consistently using the effective mass approximation for the respective densities of states. The proximity and size effect of the electron and donor accumulation/depletion by thin stripe domains and cylindrical nanodomains are revealed. In contrast to thick domain stripes and thicker cylindrical domains, in which the carrier accumulation (and so the static conductivity) sharply increases at the domain walls only, small nanodomains of radius less then 5-10 correlation length appeared conducting across entire cross-section. Implications of such conductive nanosized channels may be promising for nanoelectronics.Comment: 39 pages, 11 figures, 3 tables, 4 appendice

    Thermodynamics of nanodomain formation and breakdown in Scanning Probe Microscopy: Landau-Ginzburg-Devonshire approach

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    Thermodynamics of tip-induced nanodomain formation in scanning probe microscopy of ferroelectric films and crystals is studied using the Landau-Ginzburg-Devonshire phenomenological approach. The local redistribution of polarization induced by the biased probe apex is analyzed including the effects of polarization gradients, field dependence of dielectric properties, intrinsic domain wall width, and film thickness. The polarization distribution inside subcritical nucleus of the domain preceding the nucleation event is very smooth and localized below the probe, and the electrostatic field distribution is dominated by the tip. In contrast, polarization distribution inside the stable domain is rectangular-like, and the associated electrostatic fields clearly illustrate the presence of tip-induced and depolarization field components. The calculated coercive biases of domain formation are in a good agreement with available experimental results for typical ferroelectric materials. The microscopic origin of the observed domain tip elongation in the region where the probe electric field is much smaller than the intrinsic coercive field is the positive depolarization field in front of the moving counter domain wall. For infinitely thin domain walls local domain breakdown through the sample depth appears. The results obtained here are complementary to the Landauer-Molotskii energetic approach.Comment: 35 pages, 8 figures, suplementary attached, to be submitted to Phys. Rev.

    Magnetic Moment Softening and Domain Wall Resistance in Ni Nanowires

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    Magnetic moments in atomic scale domain walls formed in nanoconstrictions and nanowires are softened which affects dramatically the domain wall resistance. We perform ab initio calculations of the electronic structure and conductance of atomic-size Ni nanowires with domain walls only a few atomic lattice constants wide. We show that the hybridization between noncollinear spin states leads to a reduction of the magnetic moments in the domain wall. This magnetic moment softening strongly enhances the domain wall resistance due to scattering produced by the local perturbation of the electronic potential.Comment: 4 pages, 5 figure

    The Interaction of an 180 degree Ferroelectric Domain Wall with a Biased Scanning Probe Microscopy Tip: Effective Wall Geometry and Thermodynamics in Ginzburg-Landau-Devonshire Theory

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    The interaction of ferroelectric 180 degree domain wall with a strongly inhomogeneous electric field of biased Scanning Probe Microscope tip is analyzed within continuous Landau-Ginzburg-Devonshire theory. Equilibrium shape of the initially flat domain wall boundary bends, attracts or repulses from the probe apex, depending on the sign and value of the applied bias. For large tip-wall separations, the probe-induced domain nucleation is possible. The approximate analytical expressions for the polarization distribution are derived using direct variational method. The expressions provide insight how the equilibrium polarization distribution depends on the wall finite-width, correlation and depolarization effects, electrostatic potential distribution of the probe and ferroelectric material parameters.Comment: 37 pages, 9 figures, 4 Appendices, to be submitted to Phys. Rev.

    ΠŸΠ°Ρ€Π°ΠΌΠ΅Ρ‚Ρ€Ρ‹ пСрифСричСской ΠΊΡ€ΠΎΠ²ΠΈ ΠΊΠ°ΠΊ ΠΌΠ°Ρ€ΠΊΠ΅Ρ€Ρ‹ нСспСцифичСского Π°Π΄Π°ΠΏΡ‚Π°Ρ†ΠΈΠΎΠ½Π½ΠΎΠ³ΠΎ ΠΎΡ‚Π²Π΅Ρ‚Π° ΠΏΡ€ΠΈ острых ΠΈΠ½Ρ„Π΅ΠΊΡ†ΠΈΠΎΠ½Π½Ρ‹Ρ… заболСваниях с синдромом Ρ‚ΠΎΠ½Π·ΠΈΠ»Π»ΠΈΡ‚Π°

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    Evaluation of nonspecific adaptive response of the body in children with acute infectious diseases associated with tonsillitis syndrome was the aim of this research. This prospective study included clinical, anamnestic and laboratory examination of children with acute infectious diseases with tonsillitis syndrome. A systemic multiple factor analysis was conducted (significance level Ρ€<0.05). The evaluation of peripheral blood parameters (specific gravity of lymphocytes and indices of reactive protective potential (RPP) - specific immune lymphocytic-monocytic parameter (SILMP) and coefficient of phagocytic defense (CPD)) gives the possibility to determine the condition of nonspecific adaptation in children with acute infectious diseases associated with tonsillitis syndrome. Children with tonsillitis syndrome show significant increase of integral RPP parameters, i.e. decrease of RPP, which is more pronounced on discharge (on admission - in 57% of children, on discharge - in 87%). The most unfavourable initial nonspecific adaptative body response (NABR) (according to the percentage of lymphocytes) is the reaction of increased activation, as it is associated with the transition to the overactivation by the time of discharge (37% of children). Systemic multiple factor analysis determined which peripheral blood parameters have more influence on children’s adaptation during the course of infectious disease: RPP indices showed high influence coefficients in all diseases (CPD was the highest in bacterial infection - Π i 198.3; SILMP was the highest in viral infection - Π i 147.81; in mixed infection CPD and SILMP were roughly the same - Π i – 107.25 and Π i - 78.11, respectively), which proves the feasibility of RPP evaluation for prognostic purposes in the treatment of this category of patients.ЦСлью настоящСго исслСдования явилась ΠΎΡ†Π΅Π½ΠΊΠ° нСспСцифичСской Π°Π΄Π°ΠΏΡ‚Π°Ρ†ΠΈΠΎΠ½Π½ΠΎΠΉ Ρ€Π΅Π°ΠΊΡ†ΠΈΠΈ ΠΎΡ€Π³Π°Π½ΠΈΠ·ΠΌΠ° Ρƒ Π΄Π΅Ρ‚Π΅ΠΉ с острыми ΠΈΠ½Ρ„Π΅ΠΊΡ†ΠΈΠΎΠ½Π½Ρ‹ΠΌΠΈ заболСваниями, ассоциированными с синдромом Ρ‚ΠΎΠ½Π·ΠΈΠ»Π»ΠΈΡ‚Π°. Π”Π°Π½Π½ΠΎΠ΅ проспСктивноС исслСдованиС Π²ΠΊΠ»ΡŽΡ‡Π°Π»ΠΎ ΠΊΠ»ΠΈΠ½ΠΈΠΊΠΎ-анамнСстичСскоС ΠΈ Π»Π°Π±ΠΎΡ€Π°Ρ‚ΠΎΡ€Π½ΠΎΠ΅ обслСдованиС Π΄Π΅Ρ‚Π΅ΠΉ с острыми ΠΈΠ½Ρ„Π΅ΠΊΡ†ΠΈΠΎΠ½Π½Ρ‹ΠΌΠΈ заболСваниями с синдромом Ρ‚ΠΎΠ½Π·ΠΈΠ»Π»ΠΈΡ‚Π°. ΠŸΡ€ΠΎΠ²Π΅Π΄Π΅Π½ систСмный ΠΌΠ½ΠΎΠ³ΠΎΡ„Π°ΠΊΡ‚ΠΎΡ€Π½Ρ‹ΠΉ Π°Π½Π°Π»ΠΈΠ· (ΡƒΡ€ΠΎΠ²Π΅Π½ΡŒ значимости Ρ€<0,05). ΠžΡ†Π΅Π½ΠΊΠ° ΠΏΠΎΠΊΠ°Π·Π°Ρ‚Π΅Π»Π΅ΠΉ пСрифСричСской ΠΊΡ€ΠΎΠ²ΠΈ (ΡƒΠ΄Π΅Π»ΡŒΠ½ΠΎΠ³ΠΎ вСса Π»ΠΈΠΌΡ„ΠΎΡ†ΠΈΡ‚ΠΎΠ² ΠΈ ΠΏΠΎΠΊΠ°Π·Π°Ρ‚Π΅Π»Π΅ΠΉ Ρ€Π΅Π°ΠΊΡ‚ΠΈΠ²Π½ΠΎ-ΠΏΡ€ΠΎΡ‚Π΅ΠΊΡ‚ΠΈΠ²Π½Ρ‹ΠΉ ΠΏΠΎΡ‚Π΅Π½Ρ†ΠΈΠ°Π» (РПП) - спСцифичСского ΠΈΠΌΠΌΡƒΠ½Π½ΠΎΠ³ΠΎ Π»ΠΈΠΌΡ„ΠΎΡ†ΠΈΡ‚Π°Ρ€Π½ΠΎ-ΠΌΠΎΠ½ΠΎΡ†ΠΈΡ‚Π°Ρ€Π½ΠΎΠ³ΠΎ ΠΏΠ°Ρ€Π°ΠΌΠ΅Ρ‚Ρ€Π° (Π˜Π›ΠœΠŸ) ΠΈ коэффициСнта Ρ„Π°Π³ΠΎΡ†ΠΈΡ‚Π°Ρ€Π½ΠΎΠΉ Π·Π°Ρ‰ΠΈΡ‚Ρ‹ (ΠšΠ€Π—) Π΄Π°Π΅Ρ‚ Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΡΡ‚ΡŒ ΠΎΠΏΡ€Π΅Π΄Π΅Π»ΠΈΡ‚ΡŒ состояниС нСспСцифичСской Π°Π΄Π°ΠΏΡ‚Π°Ρ†ΠΈΠΈ Ρƒ Π΄Π΅Ρ‚Π΅ΠΉ с ΠΎΡΡ‚Ρ€Ρ‹ΠΌΠΈ ΠΈΠ½Ρ„Π΅ΠΊΡ†ΠΈΠΎΠ½Π½Ρ‹ΠΌΠΈ заболСваниями, ассоциированными с синдромом Ρ‚ΠΎΠ½Π·ΠΈΠ»Π»ΠΈΡ‚Π°. Π£ Π΄Π΅Ρ‚Π΅ΠΉ с синдромом Ρ‚ΠΎΠ½Π·ΠΈΠ»Π»ΠΈΡ‚Π° отмСчаСтся достовСрноС ΠΏΠΎΠ²Ρ‹ΡˆΠ΅Π½ΠΈΠ΅ ΠΈΠ½Ρ‚Π΅Π³Ρ€Π°Π»ΡŒΠ½Ρ‹Ρ… ΠΏΠΎΠΊΠ°Π·Π°Ρ‚Π΅Π»Π΅ΠΉ РПП, Ρ‚. Π΅. сниТСниС РПП, ΠΊΠΎΡ‚ΠΎΡ€ΠΎΠ΅ Π±ΠΎΠ»Π΅Π΅ Π²Ρ‹Ρ€Π°ΠΆΠ΅Π½ΠΎ ΠΏΡ€ΠΈ выпискС (ΠΏΡ€ΠΈ поступлСнии - Ρƒ 57% Π΄Π΅Ρ‚Π΅ΠΉ, ΠΏΡ€ΠΈ выпискС - Ρƒ 87%). НаиболСС нСблагоприятной исходной нСспСцифичСской Π°Π΄Π°ΠΏΡ‚Π°Ρ†ΠΈΠΎΠ½Π½ΠΎΠΉ Ρ€Π΅Π°ΠΊΡ†ΠΈΠ΅ΠΉ ΠΎΡ€Π³Π°Π½ΠΈΠ·ΠΌΠ° (ΠΏΠΎ ΠΏΡ€ΠΎΡ†Π΅Π½Ρ‚Ρƒ Π»ΠΈΠΌΡ„ΠΎΡ†ΠΈΡ‚ΠΎΠ²) являСтся рСакция ΠΏΠΎΠ²Ρ‹ΡˆΠ΅Π½Π½ΠΎΠΉ Π°ΠΊΡ‚ΠΈΠ²Π°Ρ†ΠΈΠΈ, Ρ‚Π°ΠΊ ΠΊΠ°ΠΊ ΠΎΠ½Π° связана с ΠΏΠ΅Ρ€Π΅Ρ…ΠΎΠ΄ΠΎΠΌ ΠΊ Π³ΠΈΠΏΠ΅Ρ€Π°ΠΊΡ‚ΠΈΠ²Π°Ρ†ΠΈΠΈ ΠΊ ΠΌΠΎΠΌΠ΅Π½Ρ‚Ρƒ выписки (37% Π΄Π΅Ρ‚Π΅ΠΉ). БистСмный ΠΌΠ½ΠΎΠ³ΠΎΡ„Π°ΠΊΡ‚ΠΎΡ€Π½Ρ‹ΠΉ Π°Π½Π°Π»ΠΈΠ· ΠΎΠΏΡ€Π΅Π΄Π΅Π»ΠΈΠ», ΠΊΠ°ΠΊΠΈΠ΅ ΠΏΠΎΠΊΠ°Π·Π°Ρ‚Π΅Π»ΠΈ пСрифСричСской ΠΊΡ€ΠΎΠ²ΠΈ ΠΎΠΊΠ°Π·Ρ‹Π²Π°ΡŽΡ‚ большСС влияниС Π½Π° Π°Π΄Π°ΠΏΡ‚Π°Ρ†ΠΈΡŽ Π΄Π΅Ρ‚Π΅ΠΉ Π² Ρ‚Π΅Ρ‡Π΅Π½ΠΈΠ΅ ΠΈΠ½Ρ„Π΅ΠΊΡ†ΠΈΠΎΠ½Π½ΠΎΠ³ΠΎ заболСвания: ΠΏΠΎΠΊΠ°Π·Π°Ρ‚Π΅Π»ΠΈ РПП ΠΏΠΎΠΊΠ°Π·Π°Π»ΠΈ высокиС коэффициСнты влияния ΠΏΡ€ΠΈ всСх заболСваниях, Ρ‡Ρ‚ΠΎ Π΄ΠΎΠΊΠ°Π·Ρ‹Π²Π°Π΅Ρ‚ Ρ†Π΅Π»Π΅ΡΠΎΠΎΠ±Ρ€Π°Π·Π½ΠΎΡΡ‚ΡŒ ΠΎΡ†Π΅Π½ΠΊΠΈ РПП Π² прогностичСских цСлях ΠΏΡ€ΠΈ Π»Π΅Ρ‡Π΅Π½ΠΈΠΈ Π΄Π°Π½Π½ΠΎΠΉ ΠΊΠ°Ρ‚Π΅Π³ΠΎΡ€ΠΈΠΈ Π±ΠΎΠ»ΡŒΠ½Ρ‹Ρ…
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