7.5 Gb/s monolithically integrated clock recovery circuit using PLL and 0.3-μm gate length quantum well HEMT's

A monolithically integrated clock recovery (CR) circuit making use of the phase-locked loop (PLL) circuit technique and enhancement/depletion AlGaAs/GaAs quantum well-high electron mobility transistors (QW-HEMT's) with gate lengths of 0.3 μm has been realized. A novel preprocessing circuit was used. In the PLL a fully-balanced varactorless VCO was applied. The VCO has a center oscillating frequency of about 7.7 GHz and a tuning range greater than 500 MHz. A satisfactory clock signal has been obtained at a bit rate of about 7.5 Gb/s. The power consumption is less than 200 mW at a supply voltage of -5 V

Clinical characteristics and outcomes of Stanford type B aortic intramural hematoma: A single centre experience

ObjectiveTo compare the clinical characteristics of Stanford type B aortic intramural hematoma (IMH) and Stanford type B aortic dissection (AD), and to identify the differences between thoracic endovascular aortic repair (TEVAR) and medical management (MM) in the Stanford type B IMH patients.MethodsA retrospective observational study was conducted in patients treated between January 2015 and December 2016. The clinical characteristics and CT images of patients with type B IMH and type B AD were compared, and the clinical characteristics and CT images of patients in the type B IMH group who were treated with TEVAR and MM were compared.ResultsA total of 176 patients were included in this study, including 62 patients of type B IMH and 114 patients of type B AD. Five patients died in the IMH group and three in the AD group. The proximal hematoma or entry tear in both groups was mainly located in the descending aorta, and the proportion of the iliac artery involved in the AD group was significantly higher than that in the IMH group (31.6% vs. 8.1% P < 0.05). There were 50 MM patients and 12 TEVAR patients in the IMH group. No death occurred in the TEVAR group, while five patients in the MM group died. Seven patients in the MM group had disease progression vs. 12 in the TEVAR group (P < 0.05). The patients in the TEVAR group had more intima lesions than those in the MM group (83.3% vs. 30.0%, P < 0.05). TEVAR group involved more iliac artery hematoma than MM group (33.3% vs. 2.0%, P < 0.05). The maximum thickness of hematoma in TEVAR group was 14.9 ± 3.4 mm, which was significantly larger than that of MM group (10.2 ± 2.8 mm) (P < 0.05).ConclusionIn the diagnosis of IMH, patients' symptoms and high-risk signs of CTA should be paid attention to. TEVAR therapy should be actively considered on the basis of effective medical management when there are intima lesions (ULP/PAU), increased aortic diameter and hematoma thickness, extensive hematoma involvement, and pleural effusion

7.5 Gb/s monolithically integrated clock recovery using PLL and 0.3 μM gate length quantum well HEMTs

A monolithically integrated clock recovery (CR) circuit making use of the phase-locked loop (PLL) circuit technique and enhancement/depletion AlGaAs/GaAs quantum well high electron mobility transistors (QW-HEMTs) with gate lengths of 0.3 μm has been realized. A novel preprocessing circuit was used. In the PLL a fully-balanced varactorless VCO has been introduced. The VCO has a centre oscillating frequency of about 7.5 GHz and a tuning range greater than 500 MHz. A satisfactory clock signal has been obtained at the bit rate of about 7.5 Gb/s. The power consumption is less than 200 mW at the supply voltage of -5 V

18 Gbit/s monolithically integrated 2:1 multiplexer and laser driving using 0.3 μm gate length quantum well HEMTs

A monolithically integrated 2:1 multiplexer and laser diode driver was developed, using AlGaAs quantum well HEMTs of 0.3 μm gate length. The DC and modulation current is 25 and 45 mA, respectively. Open eye diagrams were measured at bit rates up to 18 Gbit/s with pseudorandom data streams

Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3- μm gate length quantum-well HEMT's

An integrated laser-diode voltage driver (LDVD) making use of enhancement/depletion AlGaAs-GaAs quantum-well high electron mobility transistors (QW HEMTs) with gate lengths of 0.3 μm has been developed. Its large signal bandwidth is 12 GHz. Eye diagrams of the output signal at bit rates up to 8 Gb/s show an opening similar to that of the input signal. Supporting material is given indicating that the LDVD might operate at bit rates up to 20 Gb/s. The maximum output current is over 90 mA; the maximum modulation voltage of 800 mV corresponds to 40-mA modulation current for a laser diode with 20-Ω dynamic resistance. The power consumption is less than 500 mW

A CMOS balun with common ground and artificial dielectric compensations applied in a wideband RF front-end

This paper presents a compact on-chip balun with a turn ratio of 1:2, and its application for sub-6 GHz wideband front-end. The common ground between the primary and secondary windings is designed by utilizing a short transmission line (T-line) to eliminate the imbalance. To further mitigate the imbalance, float metal conductors are used as a part of primary winding for artificial dielectric compensation. A 2.0-to-3.7 GHz wideband RF front-end is also designed by using the proposed CMOS balun. The balun and RF front-end are fabricated by using a standard 0.13-μm CMOS technology. The bandwidth of the proposed balun for |S11|<-10 dB is 2.2–5.1 GHz with fractional bandwidth up to 79.5%. In the operational bandwidth, the maximum amplitude and phase imbalance is 1.5 dB and 2°, respectively. The measured insertion loss is 4.8–5.6 dB (including 3 dB splitting loss) within the frequency range from 2.2 to 5.1 GHz.This work was supported by the S&T program of Hebei under No. 18960202D