Research on Short-Circuit Discharge Characteristics of Capacitive Circuits Based on Safety Spark Test Apparatus

Based on the safety spark test apparatus, the short-circuit spark discharge (SCSD) characteristics of the simple capacitive circuit and switching converter are studied. It is pointed out that their SCSD process can be divided into four stages, that is, dielectric-breakdown stage, spark-generated stage, spark-maintenance stage, and spark-extinguish stage; moreover, there is different equivalent spark resistance in each stage. For the simple capacitive circuit, its spark resistance is larger and maintaining voltage is almost unchanged in the spark-maintenance stage. For the switching converter, its output short-circuit characteristics depend strongly on the load resistance and its maintaining voltage reduces rapidly with the decrease of the load resistance. The circuit model is proposed, which can simulate the output SCSD process of the switching converter. By using the least-squares method, the relationship expressions between the discharge duration and capacitance in each time-stage are derived and the corresponding equivalent resistance is obtained. The mathematical models are established, and the expressions of the discharge current and voltage are deduced. Experiment and simulation results are positive in the analysis showing the feasibility of the proposed models

Gas sensing performance of In2O3 nanostructures: A mini review

Effective detection of toxic and hazardous gases is crucial for ensuring human safety, and high-performance metal oxide-based gas sensors play an important role in achieving this goal. In2O3 is a widely used n-type metal oxide in gas sensors, and various In2O3 nanostructures have been synthesized for detecting small gas molecules. In this review, we provide a brief summary of current research on In2O3-based gas sensors. We discuss methods for synthesizing In2O3 nanostructures with various morphologies, and mainly review the sensing behaviors of these structures in order to better understand their potential in gas sensors. Additionally, the sensing mechanism of In2O3 nanostructures is discussed. Our review further indicates that In2O3-based nanomaterials hold great promise for assembling high-performance gas sensors

OsHAC1;1 and OsHAC1;2 function as arsenate reductases and regulate arsenic accumulation

Rice is a major dietary source of the toxic metalloid arsenic (As). Reducing its accumulation in rice (Oryza sativa) grain is of critical importance to food safety. Rice roots take up arsenate and arsenite depending on the prevailing soil conditions. The first step of arsenate detoxification is its reduction to arsenite, but the enzyme(s) catalyzing this reaction in rice remains unknown. Here, we identify OsHAC1;1 and OsHAC1;2 as arsenate reductases in rice. OsHAC1;1 and OsHAC1;2 are able to complement an Escherichia coli mutant lacking the endogenous arsenate reductase and to reduce arsenate to arsenite. OsHAC1:1 and OsHAC1;2 are predominantly expressed in roots, with OsHAC1;1 being abundant in the epidermis, root hairs, and pericycle cells while OsHAC1;2 is abundant in the epidermis, outer layers of cortex, and endodermis cells. Expression of the two genes was induced by arsenate exposure. Knocking out OsHAC1;1 or OsHAC1;2 decreased the reduction of arsenate to arsenite in roots, reducing arsenite efflux to the external medium. Loss of arsenite efflux was also associated with increased As accumulation in shoots. Greater effects were observed in a double mutant of the two genes. In contrast, overexpression of either OsHAC1;1 or OsHAC1;2 increased arsenite efflux, reduced As accumulation, and enhanced arsenate tolerance. When grown under aerobic soil conditions, overexpression of either OsHAC1;1 or OsHAC1;2 also decreased As accumulation in rice grain, whereas grain As increased in the knockout mutants. We conclude that OsHAC1;1 and OsHAC1;2 are arsenate reductases that play an important role in restricting As accumulation in rice shoots and grain

High-order dynamic localization and tunable temporal cloaking in ac-electric-field driven synthetic lattices

Dynamic localization (DL) of photons, i.e., the light-motion cancellation effect arising from lattice's quasi-energy band collapse under a synthetic ac-electric-field, provides a powerful and alternative mechanism to Anderson localization for coherent light confinement. So far only low-order DLs, corresponding to weak ac-fields, have been demonstrated using curved-waveguide lattices where the waveguide's bending curvature plays the role of ac-field as required in original Dunlap-Kenkre model of DL. However, the inevitable bending losses pose a severe limitation for the observation of high-order DL. Here, we break the weak-field limitation by transferring lattice concepts from spatial to synthetic time dimensions using fiber-loop circuits and observe up to fifth-order DL. We find that high-order DLs possess superior localization and robustness against random noise over lower-order ones. As an exciting application, by judiciously combining low- and high-order DLs, we demonstrate a temporal cloaking scheme with flexible tunability both for cloak's window size and opening time. Our work pushes DL towards high-order regimes using synthetic-lattice schemes, which may find potential applications in robust signal transmission, protection, processing, and cloaking