Uplift of Central Mongolia Recorded in Vesicular Basalts

Epeirogenic histories of highland areas have confounded earth scientists for decades, as there are few sedimentary records of paleoelevation in eroding highlands. For example, mechanisms that have led to the high elevations of the Hangay Mountains in central Mongolia are not clear, nor is it well understood how the epeirogenic history of central Mongolia is connected to that of a broader region of high elevation that extends hundreds of kilometers to the north, east, and west. However, preserved basaltic lava flows record paleoelevation in the size distributions of vesicles at the tops and bottoms of flow units. As an initial step toward better understanding the tectonics of this part of Asia, we collected and analyzed samples from several basaltic lava flows from throughout the Hangay Mountains to use as a paleoaltimeter on the basis of lava flow vesicularity. Samples were dated and scanned with x-ray tomography to provide quantitative information regarding their internal vesicle size distributions. This yielded the pressure difference between the top and bottom of each flow for paleoelevation calculation. Results suggest that the Hangay Mountains experienced uplift of more than 1 km sometime during the past 9 m.yr. The magnitude of uplift of the Hangay, in addition to the composition of its lavas, the geomorphology of the region, its drainage pattern history, and other proxies, bears on possible mechanisms for uplift of this part of central Asia

Quantum-Hall activation gaps in graphene

We have measured the quantum-Hall activation gaps in graphene at filling factors $\nu=2$ and $\nu=6$ for magnetic fields up to 32 T and temperatures from 4 K to 300 K. The $\nu =6$ gap can be described by thermal excitation to broadened Landau levels with a width of 400 K. In contrast, the gap measured at $\nu=2$ is strongly temperature and field dependent and approaches the expected value for sharp Landau levels for fields $B > 20$ T and temperatures $T > 100$ K. We explain this surprising behavior by a narrowing of the lowest Landau level.Comment: 4 pages, 4 figures, updated version after review, accepted for PR

Scaling of the quantum-Hall plateau-plateau transition in graphene

The temperature dependence of the magneto-conductivity in graphene shows that the widths of the longitudinal conductivity peaks, for the N=1 Landau level of electrons and holes, display a power-law behavior following $\Delta \nu \propto T^{\kappa}$ with a scaling exponent $\kappa = 0.37\pm0.05$. Similarly the maximum derivative of the quantum Hall plateau transitions $(d\sigma_{xy}/d\nu)^{max}$ scales as $T^{-\kappa}$ with a scaling exponent $\kappa = 0.41\pm0.04$ for both the first and second electron and hole Landau level. These results confirm the universality of a critical scaling exponent. In the zeroth Landau level, however, the width and derivative are essentially temperature independent, which we explain by a temperature independent intrinsic length that obscures the expected universal scaling behavior of the zeroth Landau level

Coating and Density Distribution Analysis of Commercial Ciprofloxacin Hydrochloride Monohydrate Tablets by Terahertz Pulsed Spectroscopy and Imaging

Terahertz pulsed spectroscopy was used to qualitatively detect ciprofloxacin hydrochloride monohydrate (CPFX·HCl·H2O) in tablets, and terahertz pulsed imaging (TPI) was used to scrutinize not only the coating state but also the density distribution of tablets produced by several manufacturers. TPI was also used to evaluate distinguishability among these tablets. The same waveform, which is a unique terahertz absorption spectrum derived from pure CPFX·HCl·H2O, was observed in all of the crushed tablets and in pure CPFX·HCl·H2O. TPI can provide information about the physical states of coated tablets. Information about the uniformity of parameters such as a coating thickness and density can be obtained. In this study, the authors investigated the coating thickness distributions of film-coated CPFX·HCl·H2O from four different manufacturers. Unique terahertz images of the density distributions in these commercial tablets were obtained. Moreover, B-scan (depth) images show the status of the coating layer in each tablet and the density map inside the tablets. These features would reflect differences resulting from different tablet-manufacturing processes

Gap opening in the zeroth Landau level of graphene

We have measured a strong increase of the low-temperature resistivity $\rho_{xx}$ and a zero-value plateau in the Hall conductivity $\sigma_{xy}$ at the charge neutrality point in graphene subjected to high magnetic fields up to 30 T. We explain our results by a simple model involving a field dependent splitting of the lowest Landau level of the order of a few Kelvin, as extracted from activated transport measurements. The model reproduces both the increase in $\rho_{xx}$ and the anomalous $\nu=0$ plateau in $\sigma_{xy}$ in terms of coexisting electrons and holes in the same spin-split zero-energy Landau level.Comment: 4 pages, 3 figure

Temperature dependence of antiferromagnetic susceptibility in ferritin

We show that antiferromagnetic susceptibility in ferritin increases with temperature between 4.2 K and 180 K (i. e. below the N\'{e}el temperature) when taken as the derivative of the magnetization at high fields ($30\times10^4$ Oe). This behavior contrasts with the decrease in temperature previously found, where the susceptibility was determined at lower fields ($5\times10^4$ Oe). At high fields (up to $50 \times10^4$ Oe) the temperature dependence of the antiferromagnetic susceptibility in ferritin nanoparticles approaches the normal behavior of bulk antiferromagnets and nanoparticles considering superantiferromagnetism, this latter leading to a better agreement at high field and low temperature. The contrast with the previous results is due to the insufficient field range used ($< 5 \times10^4$ Oe), not enough to saturate the ferritin uncompensated moment.Comment: 7 pages, 7 figures, accepted in Phys. Rev.

Band inversion driven by electronic correlations at the (111) LaAlO3_3/SrTiO3_3 interface

Quantum confinement at complex oxide interfaces establishes an intricate hierarchy of the strongly correlated $d$-orbitals which is widely recognized as a source of emergent physics. The most prominent example is the (001) LaAlO$_3$/SrTiO$_3$(LAO/STO) interface, which features a dome-shaped phase diagram of superconducting critical temperature and spin-orbit coupling (SOC) as a function of electrostatic doping, arising from a selective occupancy of $t_{2g}$ orbitals of different character. Here we study (111)-oriented LAO/STO interfaces - where the three $t_{2g}$ orbitals contribute equally to the sub-band states caused by confinement - and investigate the impact of this unique feature on electronic transport. We show that transport occurs through two sets of electron-like sub-bands, and the carrier density of one of the sets shows a non-monotonic dependence on the sample conductance. Using tight-binding modeling, we demonstrate that this behavior stems from a band inversion driven by on-site Coulomb interactions. The balanced contribution of all $t_{2g}$ orbitals to electronic transport is shown to result in strong SOC with reduced electrostatic modulation.Comment: 5 pages, 4 figures, (+ supplemental material

Steps on current-voltage characteristics of a silicon quantum dot covered by natural oxide

Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide with two metallic terminals, we derive simple conditions for a step-like voltage-current curve. Due to standard chemical properties, doping phosphorus atoms located in a certain domain of the dot form geometrically parallel current channels. The height of the current step typically equals to (1.2 pA)N, where N=0,1,2,3... is the number of doping atoms inside the domain, and only negligibly depends on the actual position of the dopants. The found conditions are feasible in experimentally available structures.Comment: 4 pages, 3 figure

Room-Temperature Quantum Hall Effect in Graphene

The quantum Hall effect (QHE), one example of a quantum phenomenon that occur on a truly macroscopic scale, has been attracting intense interest since its discovery in 1980 and has helped elucidate many important aspects of quantum physics. It has also led to the establishment of a new metrological standard, the resistance quantum. Disappointingly, however, the QHE could only have been observed at liquid-helium temperatures. Here, we show that in graphene - a single atomic layer of carbon - the QHE can reliably be measured even at room temperature, which is not only surprising and inspirational but also promises QHE resistance standards becoming available to a broader community, outside a few national institutions.Comment: Published in Science online 15 February 200

Experimental imaging and atomistic modeling of electron and hole quasiparticle wave functions in InAs/GaAs quantum dots

We present experimental magnetotunneling results and atomistic pseudopotential calculations of quasiparticle electron and hole wave functions of self-assembled InAs/GaAs quantum dots. The combination of a predictive theory along with the experimental results allows us to gain direct insight into the quantum states. We monitor the effects of (i) correlations, (ii) atomistic symmetry and (iii) piezoelectricity on the confined carriers and (iv) observe a peculiar charging sequence of holes that violates the Aufbau principle.Comment: Submitted to Physical Review B. A version of this paper with figures can be found at http://www.sst.nrel.gov/nano_pub/mts_preprint.pd