Specific Heat of a Fractional Quantum Hall System

Using a time-resolved phonon absorption technique, we have measured the specific heat of a two-dimensional electron system in the fractional quantum Hall effect regime. For filling factors $\nu = 5/3, 4/3, 2/3, 3/5, 4/7, 2/5$ and 1/3 the specific heat displays a strong exponential temperature dependence in agreement with excitations across a quasi-particle gap. At filling factor $\nu = 1/2$ we were able to measure the specific heat of a composite fermion system for the first time. The observed linear temperature dependence on temperature down to $T = 0.14$ K agrees well with early predictions for a Fermi liquid of composite fermions.Comment: 4 pages, 4 figures (version is 1. resubmission: Added a paragraph to include the problems which arise by the weak temperature dependence at \nu = 1/2, updated affiliation

Transport Gap in Suspended Bilayer Graphene at Zero Magnetic Field

We report a change of three orders of magnitudes in the resistance of a suspended bilayer graphene flake which varies from a few k$\Omega$s in the high carrier density regime to several M$\Omega$s around the charge neutrality point (CNP). The corresponding transport gap is 8 meV at 0.3 K. The sequence of appearing quantum Hall plateaus at filling factor $\nu=2$ followed by $\nu=1$ suggests that the observed gap is caused by the symmetry breaking of the lowest Landau level. Investigation of the gap in a tilted magnetic field indicates that the resistance at the CNP shows a weak linear decrease for increasing total magnetic field. Those observations are in agreement with a spontaneous valley splitting at zero magnetic field followed by splitting of the spins originating from different valleys with increasing magnetic field. Both, the transport gap and $B$ field response point toward spin polarized layer antiferromagnetic state as a ground state in the bilayer graphene sample. The observed non-trivial dependence of the gap value on the normal component of $B$ suggests possible exchange mechanisms in the system.Comment: 8 pages, 5 figure

Quantum resistance metrology in graphene

We have performed a metrological characterization of the quantum Hall resistance in a 1 $\mu$m wide graphene Hall-bar. The longitudinal resistivity in the center of the $\nu=\pm 2$ quantum Hall plateaus vanishes within the measurement noise of 20 m$\Omega$ upto 2 $\mu$A. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5$\mu$A current) equal to that in conventional semiconductors. The principal limitation of the present experiments are the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied

Coating and Density Distribution Analysis of Commercial Ciprofloxacin Hydrochloride Monohydrate Tablets by Terahertz Pulsed Spectroscopy and Imaging

Terahertz pulsed spectroscopy was used to qualitatively detect ciprofloxacin hydrochloride monohydrate (CPFX·HCl·H2O) in tablets, and terahertz pulsed imaging (TPI) was used to scrutinize not only the coating state but also the density distribution of tablets produced by several manufacturers. TPI was also used to evaluate distinguishability among these tablets. The same waveform, which is a unique terahertz absorption spectrum derived from pure CPFX·HCl·H2O, was observed in all of the crushed tablets and in pure CPFX·HCl·H2O. TPI can provide information about the physical states of coated tablets. Information about the uniformity of parameters such as a coating thickness and density can be obtained. In this study, the authors investigated the coating thickness distributions of film-coated CPFX·HCl·H2O from four different manufacturers. Unique terahertz images of the density distributions in these commercial tablets were obtained. Moreover, B-scan (depth) images show the status of the coating layer in each tablet and the density map inside the tablets. These features would reflect differences resulting from different tablet-manufacturing processes

Experimental evidence for the formation of stripe phases in Si/SiGe

We observe pronounced transport anisotropies in magneto-transport experiments performed in the two-dimensional electron system of a Si/SiGe heterostructure. They occur when an in-plane field is used to tune two Landau levels with opposite spin to energetic coincidence. The observed anisotropies disappear drastically for temperatures above 1 K. We propose that our experimental findings may be caused by the formation of a unidirectional stripe phase oriented perpendicular to the in-plane field.Comment: 4 pages, 3 figure

Temperature dependence of antiferromagnetic susceptibility in ferritin

We show that antiferromagnetic susceptibility in ferritin increases with temperature between 4.2 K and 180 K (i. e. below the N\'{e}el temperature) when taken as the derivative of the magnetization at high fields ($30\times10^4$ Oe). This behavior contrasts with the decrease in temperature previously found, where the susceptibility was determined at lower fields ($5\times10^4$ Oe). At high fields (up to $50 \times10^4$ Oe) the temperature dependence of the antiferromagnetic susceptibility in ferritin nanoparticles approaches the normal behavior of bulk antiferromagnets and nanoparticles considering superantiferromagnetism, this latter leading to a better agreement at high field and low temperature. The contrast with the previous results is due to the insufficient field range used ($< 5 \times10^4$ Oe), not enough to saturate the ferritin uncompensated moment.Comment: 7 pages, 7 figures, accepted in Phys. Rev.

Generation of energy selective excitations in quantum Hall edge states

We operate an on-demand source of single electrons in high perpendicular magnetic fields up to 30T, corresponding to a filling factor below 1/3. The device extracts and emits single charges at a tunable energy from and to a two-dimensional electron gas, brought into well defined integer and fractional quantum Hall (QH) states. It can therefore be used for sensitive electrical transport studies, e.g. of excitations and relaxation processes in QH edge states

Extremely high magnetoresistance and conductivity in the type-II Weyl semimetals WP2 and MoP2

The peculiar band structure of semimetals exhibiting Dirac and Weyl crossings can lead to spectacular electronic properties such as large mobilities accompanied by extremely high magnetoresistance. In particular, two closely neighbouring Weyl points of the same chirality are protected from annihilation by structural distortions or defects, thereby significantly reducing the scattering probability between them. Here we present the electronic properties of the transition metal diphosphides, WP2 and MoP2, that are type-II Weyl semimetals with robust Weyl points. We present transport and angle resolved photoemission spectroscopy measurements, and first principles calculations. Our single crystals of WP2 display an extremely low residual low-temperature resistivity of 3 nohm-cm accompanied by an enormous and highly anisotropic magnetoresistance above 200 million % at 63 T and 2.5 K. These properties are likely a consequence of the novel Weyl fermions expressed in this compound. We observe a large suppression of charge carrier backscattering in WP2 from transport measurements.Comment: Appeared in Nature Communication