Exact Traveling Wave Solutions of Nonlinear PDEs in Mathematical Physics Using the Modified Simple Equation Method

In this article, we apply the modified simple equation method to find the exact solutions with parameters of the (1+1)-dimensional nonlinear Burgers-Huxley equation, the (2+1) dimensional cubic nonlinear Klein-Gordon equation and the (2+1)-dimensional nonlinear Kadomtsev- Petviashvili-Benjamin-Bona-Mahony (KP-BBM) equation. The new exact solutions of these three equations are obtained. When these parameters are given special values, the solitary solutions are obtained

Učinak opuštanja na prekidačka svojstva tankih slojeva CuInSeTe

The switching properties of amorphous CuInSeTe thin films have been investigated. The amorphous quaternary semiconductor CuInSeTe thin films ∼ 220 nm and ∼ 330 nm thick have been prepared by thermal evaporation of the bulk compound under vacuum of about 10−4 Pa and with deposition rate about 8 nm/s. The structure of the bulk and thin films were investigated by the X-ray diffraction technique. The compositional studies of CuInSeTe in both powder and thin films were carried out by Perkin Elmer Model 1100 atomic absorption spectrometer. The annealing of the films at different annealing temperatures (300, 350, 400, 450 and 500 K) improves the switching characteristics and decrease the threshold voltage Vth. The threshold switching voltage and the threshold activation energy Es were found to decrease linearly with increasing annealing temperature. Moreover, the threshold switching voltage decreased exponentially with temperature.Istraživali smo prekidačka svojstva amorfnih tankih slojeva CuInSeTe. Tanke amorfne slojeve četiritvornog poluvodiča CuInSeTe debljine ∼ 220 nm i ∼ 330 nm pripremali smo naparavanjem spoja u vakuumu pri oko 10−4 Pa, brzinom naparavanja od oko 8 nm/s. Strukturu praha i tankih slojeva odredili smo rendgenskom difrakcijom. Sastav CuInSeTe u prahu i tankih slojeva ispitali smo pomoću Perkin Elmer-ovog (model 1100) apsorpcijskog spektrometra. Opuštanje tankih slojeva na nizu temperatura (300, 350, 400, 450 i 500 K) poboljšava njihova preklopna svojstva i smanjuje napon praga preklopnog napona Vth. Našli smo da se prag preklopnog napona i prag aktivacijske energije Es linearno smanjuju s povećanjem temperature opuštanja. K tome, prag preklopnog napona smanjuje se eksponencijalno s temperaturom opuštanja

Učinak opuštanja na prekidačka svojstva tankih slojeva CuInSeTe

The switching properties of amorphous CuInSeTe thin films have been investigated. The amorphous quaternary semiconductor CuInSeTe thin films ∼ 220 nm and ∼ 330 nm thick have been prepared by thermal evaporation of the bulk compound under vacuum of about 10−4 Pa and with deposition rate about 8 nm/s. The structure of the bulk and thin films were investigated by the X-ray diffraction technique. The compositional studies of CuInSeTe in both powder and thin films were carried out by Perkin Elmer Model 1100 atomic absorption spectrometer. The annealing of the films at different annealing temperatures (300, 350, 400, 450 and 500 K) improves the switching characteristics and decrease the threshold voltage Vth. The threshold switching voltage and the threshold activation energy Es were found to decrease linearly with increasing annealing temperature. Moreover, the threshold switching voltage decreased exponentially with temperature.Istraživali smo prekidačka svojstva amorfnih tankih slojeva CuInSeTe. Tanke amorfne slojeve četiritvornog poluvodiča CuInSeTe debljine ∼ 220 nm i ∼ 330 nm pripremali smo naparavanjem spoja u vakuumu pri oko 10−4 Pa, brzinom naparavanja od oko 8 nm/s. Strukturu praha i tankih slojeva odredili smo rendgenskom difrakcijom. Sastav CuInSeTe u prahu i tankih slojeva ispitali smo pomoću Perkin Elmer-ovog (model 1100) apsorpcijskog spektrometra. Opuštanje tankih slojeva na nizu temperatura (300, 350, 400, 450 i 500 K) poboljšava njihova preklopna svojstva i smanjuje napon praga preklopnog napona Vth. Našli smo da se prag preklopnog napona i prag aktivacijske energije Es linearno smanjuju s povećanjem temperature opuštanja. K tome, prag preklopnog napona smanjuje se eksponencijalno s temperaturom opuštanja

Izrada i značajke tankih polikristaliničnih hetero-spojeva n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2

CuGa0.3In0.7Se2 polycrystalline thin films were prepared by thermal evaporation under vacuum of about 10-4Pa, with a deposition rate of about 200 nm/min. The selenization of these films at 723 K improves their properties. The activation energy as well as the optical energy gap of the investigated samples decreased with annealing and selenization. Polycrystalline thin film n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2 heterojunctions were fabricated and the current density - voltage and capacitance - voltage characteristics of the junction were studied. The heterojunctions were exposed to light, and under illumination of 1000 mWcm-2, the open circuit voltage was 580 mV, the short circuit current density 4.8 mAcm-2, the fill factor 0.682 and the electrical conversion efficiency was 1.898% for cells of active area of 1 cm2.Tanke polikristalinične slojeve CuGa0.3In0.7Se2 pripremali smo naparavanjem u vakuumu oko 10−4 Pa, brzinom polaganja oko 200 nm/min. Seleniranje tih slojeva na 723 K poboljšava im svojstva. Aktivacijska energija i optički energijski procijep smanjuju se opuštanjem i seleniranjem. Pripremali smo i polikristalinične tankoslojne hetero-spojeve n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2 i proučavali njihova značajke: gustoća struje – napon i kapacitet – napon. Ćelije ploštine 1 cm2 heterospojeva osvijetlili smo svjetlošću jakosti 1000 mW/cm2 i izmjerili napon otvorenog kruga od 580 mV, gustoću struje kratkog spoja 4.8 mAcm−2 , faktor punjenja 0.682 i učinkovitost pretvorbe 1.898%

Izrada i značajke tankih polikristaliničnih hetero-spojeva n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2

CuGa0.3In0.7Se2 polycrystalline thin films were prepared by thermal evaporation under vacuum of about 10-4Pa, with a deposition rate of about 200 nm/min. The selenization of these films at 723 K improves their properties. The activation energy as well as the optical energy gap of the investigated samples decreased with annealing and selenization. Polycrystalline thin film n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2 heterojunctions were fabricated and the current density - voltage and capacitance - voltage characteristics of the junction were studied. The heterojunctions were exposed to light, and under illumination of 1000 mWcm-2, the open circuit voltage was 580 mV, the short circuit current density 4.8 mAcm-2, the fill factor 0.682 and the electrical conversion efficiency was 1.898% for cells of active area of 1 cm2.Tanke polikristalinične slojeve CuGa0.3In0.7Se2 pripremali smo naparavanjem u vakuumu oko 10−4 Pa, brzinom polaganja oko 200 nm/min. Seleniranje tih slojeva na 723 K poboljšava im svojstva. Aktivacijska energija i optički energijski procijep smanjuju se opuštanjem i seleniranjem. Pripremali smo i polikristalinične tankoslojne hetero-spojeve n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2 i proučavali njihova značajke: gustoća struje – napon i kapacitet – napon. Ćelije ploštine 1 cm2 heterospojeva osvijetlili smo svjetlošću jakosti 1000 mW/cm2 i izmjerili napon otvorenog kruga od 580 mV, gustoću struje kratkog spoja 4.8 mAcm−2 , faktor punjenja 0.682 i učinkovitost pretvorbe 1.898%

FORMULATION AND EVALUATION OF FLURBIPROFEN SUSTAINED RELEASE MATRIX TABLETS USING AN ALTERNATIVE TECHNIQUE AS POTENTIAL ECONOMIC APPROACH

Objective: Development of sustained released tablets of flurbiprofen (FP) using an alternative technique to the traditional method of wet granulation process aiming to lower labor cost of the granulation process and formulating tablets with better characteristics. Methods: Eight matrix tablets formulae of FP were prepared by the alternative technique. The various characteristics of FP prepared tablets were investigated and comparatively evaluated by FP tablets prepared by the traditional method. The release data was analyzed according to various kinetic equations. The ulcerogenic effects of some FP tablets formulae were evaluated. Results: FP tablets prepared by the alternative technique displayed the best physical characteristics. All FP prepared tablets displayed good sustained-release patterns. FP tablets prepared by the traditional method showed a progress decrease in drug dissolution by increasing matrix concentration and hence, more matrix agent or multiple granulations was needed which makes granulation process to be difficult and cost. While, FP tablets prepared by the alternative technique displayed dissolution profiles with minimal differences in-between reflecting the low labor cost of granulation process where good sustained patterns could be obtained by a minor of the matrix agent. Histologically, the ulcerogenic effects of FP on the rats were highly reduced by FP tablets prepared by the alternative technique rather than others. The release kinetics of different prepared FP tablets displayed a coupled release pattern between diffusion and dissolution. Conclusion: This work proved the potential of the alternative technique as an effective economic approach for formulating FP sustained released tablets with better characteristics and low labor cost

Synthesis and Characterization of Zno Nanoparticles Using Hydrothermal and Sol-Gel Techniques for Dye-Sensitized Solar Cells

في هذا البحث تم تخليق جسيمات نانوية نقية من أكسيد الزنك باستخدام طريقتي الهيدروثيرمال وطريقة الصول جل. من فحوصات حيود الاشعة السينية تبين أن متوسط حجم الحبيبة تتراوح بين من 25 الي 28 نانومتر وتاخذ شكلا كرويا. فحوصات طيف الامتصاص بينت أن العينات جميعها لها اعلي امتصاص في منطقة الاشعة الفوق بنفسجية. وتم حساب فجوة الطاقة للعينات فوجد انها تساوي 3.13 eV و3.16 eV للعينة التي حضرت بطريقة الهيدروثيرمال والصول جل على الترتيب. تم تحضير عينات لخلايا شمسية صبغية وتم استخدام 3 انواع من الاصباغ الكيمياءية كمتحسسات ضوئية. فحوصات الاشعة الفوق بنفسجية بينت ان صبغة الايوزين الاصفر   Eosin Yتعطي اعلي امتصاص مقارنة بالاصباغ المستخدمة الاخري. تم رسم منحني الخواص لجميع العينات للخلايا الشمسية المحضرة وتم حساب جميع البارامترات اللازمة لتقييم اداء الخلية. العينة المصبوغة بصبغةEosin Y اعطت اعلي كفاءة Jsc = 4.25 (mA/cm2)، Voc = 0.51 V and η=1.08 %ZnO nanoparticles (ZnO NPs) were synthesized using hydrothermal and sol-gel techniques using zinc acetate dihydrate (Zn (CH3COO)2.2H2O) as a row material and methanol as a solvent. The structural properties of ZnO NPs were studied using EDX, XRD, TEM, and the optical properties were characterized using UV-VIS and PL spectroscopies. The synthesized ZnO NPs showed high purity and revealed a wurtzite (hexagonal) crystal structure with particle size (D) ranged from 25 nm to 28 nm. The UV-VIS absorption spectra of ZnO NPs samples and sensitizing dyes were performed. The obtained ZnO NPs exhibited the direct optical bandgap 3.15 eV. Dye-sensitized solar cells (DSSCs) were fabricated using synthesized ZnO NPs as a semiconducting layer, which was dyed with different low cost dyes such as Eosin B (EB), Eosin Y (EY) and Rhodamine B (RB) that was used to sensitize the photoanode (ZnO NPs). The experimental results showed a significant efficiency for the fabricated DSSCs of synthesized ZnO NPs via sol gel technique comparing to hydrothermal technique. The EY dye exhibited the best performance among others, where a conversion efficiency showed a noteworthy improvement from 0.12 to 1.08 %

The Zero-Removing Property and Lagrange-Type Interpolation Series

The classical Kramer sampling theorem, which provides a method for obtaining orthogonal sampling formulas, can be formulated in a more general nonorthogonal setting. In this setting, a challenging problem is to characterize the situations when the obtained nonorthogonal sampling formulas can be expressed as Lagrange-type interpolation series. In this article a necessary and sufficient condition is given in terms of the zero removing property. Roughly speaking, this property concerns the stability of the sampled functions on removing a finite number of their zeros