The interrelation of process techniques and space radiation effects in metal-insulator-semiconductor structures Final report, 21 Apr. 1966 - 31 Jul. 1967

Interrelation of process techniques and space radiation effects in metal oxide semiconductor

Compositional transformation and impurity-mediated optical transitions in co-evaporated Cu2AgBiI6 thin films for photovoltaic applications

Quaternary copper-silver-bismuth-iodide compounds represent a promising new class of wide-bandgap (2 eV) semiconductors for photovoltaic and photodetector applications. In this study, vapor phase co-evaporation is utilized to fabricate Cu2AgBiI6 thin films and photovoltaic devices. The findings show that the properties of vapor-deposited films are highly dependent upon processing temperature, exhibiting increased pinhole density and transforming into a mixture of quaternary, binary, and metallic phases depending on the post-deposition annealing temperature. This change in phase is accompanied by an enhancement in photoluminescence (PL) intensity and charge-carrier lifetime, along with the emergence of an additional absorption peak at high energy (≈3 eV). Generally, increased PL is a desirable property for a solar absorber material, but this change in PL is ascribed to the formation of CuI impurity domains, whose defect-mediated optical transition dominates the emission properties of the thin film. Via optical pump terahertz probe spectroscopy, it is revealed that CuI impurities hinder charge-carrier transport in Cu2AgBiI6 thin films. It is also revealed that the predominant performance limitation in Cu2AgBiI6 materials is the short electron-diffusion length. Overall, the findings pave the way for potential solutions to critical issues in copper-silver-bismuth-iodide materials and indicate strategies to develop environmentally compatible wide-bandgap semiconductors

Open-circuit and short-circuit loss management in wide-gap perovskite p-i-n solar cells

In this work, we couple theoretical and experimental approaches to understand and reduce the losses of wide bandgap Br-rich perovskite pin devices at open-circuit voltage (VOC) and short-circuit current (JSC) conditions. A mismatch between the internal quasi-Fermi level splitting (QFLS) and the external VOC is detrimental for these devices. We demonstrate that modifying the perovskite top-surface with guanidinium-Br and imidazolium-Br forms a low-dimensional perovskite phase at the n-interface, suppressing the QFLS-VOC mismatch, and boosting the VOC. Concurrently, the use of an ionic interlayer or a self-assembled monolayer at the p-interface reduces the inferred field screening induced by mobile ions at JSC, promoting charge extraction and raising the JSC. The combination of the n- and p-type optimizations allows us to approach the thermodynamic potential of the perovskite absorber layer, resulting in 1 cm2 devices with performance parameters of VOCs up to 1.29 V, fill factors above 80% and JSCs up to 17 mA/cm2, in addition to a thermal stability T80 lifetime of more than 3500 h at 85 °C

Reducing nonradiative losses in perovskite LEDs through atomic layer deposition of Al2O3 on the hole-injection contact

Experimental research data collected in laboratories at the Clarendon Laboratory, 2020-2022

Reducing Nonradiative Losses in Perovskite LEDs Through Atomic Layer Deposition of Al2O3 on the Hole-injection Contact

Experimental research data collected in laboratories at the Clarendon Laboratory, 2020-2022