916 research outputs found
Interference in transport through double barriers in interacting quantum wires
We investigate interference effects of the backscattering current through a
double-barrier structure in an interacting quantum wire attached to
noninteracting leads. Depending on the interaction strength and the location of
the barriers, the backscattering current exhibits different oscillation and
scaling characteristics with the applied voltage in the strong and weak
interaction cases. However, in both cases, the oscillation behaviors of the
backscattering current are mainly determined by the quantum mechanical
interference due to the existence of the double barriers.Comment: 6 pages, 3 fig
Antioxidant treatment enhances human mesenchymal stem cell anti-stress ability and therapeutic efficacy in an acute liver failure model
published_or_final_versio
Wideband circularly polarised antenna array with isoflux pattern
The authors present a wideband circularly polarised antenna array consisting of a 10-element ellipse dipole antenna and a feed network. A metal pillar is vertically loaded at the end of each ellipse dipole arm to extend the current path, thereby reducing the lateral dimension of the antenna element. For uniform coverage over the Earth's surface, antenna with an isoflux pattern is required due to its uniform power density over a wide coverage area. To obtain wideband and isoflux characteristics, the amplitude and phase distributions along the network are optimised by applying the hybrid of the genetic algorithm and particle swarm optimisation. Particularly, the feed network with broadband phase shifting performance is designed to attain a broad bandwidth requirement. The proposed antenna can achieve excellent impedance matching and axial ratio characteristics from 1.1 to 1.6 GHz. In addition, the isoflux radiation pattern is obtained with the beamwidth of ±21° where the gain is higher than 0 dBi in the elevation plane (xoz-Plane). The realised gain is better than 10.2 dBi and the side lobes are below −14.2dB across the operating frequency. Finally, the antenna array is manufactured and measured, and good agreement is achieved between the simulation and measurement results
Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides
Motivated by the triumph and limitation of graphene for electronic
applications, atomically thin layers of group VI transition metal
dichalcogenides are attracting extensive interest as a class of graphene-like
semiconductors with a desired band-gap in the visible frequency range. The
monolayers feature a valence band spin splitting with opposite sign in the two
valleys located at corners of 1st Brillouin zone. This spin-valley coupling,
particularly pronounced in tungsten dichalcogenides, can benefit potential
spintronics and valleytronics with the important consequences of spin-valley
interplay and the suppression of spin and valley relaxations. Here we report
the first optical studies of WS2 and WSe2 monolayers and multilayers. The
efficiency of second harmonic generation shows a dramatic even-odd oscillation
with the number of layers, consistent with the presence (absence) of inversion
symmetry in even-layer (odd-layer). Photoluminescence (PL) measurements show
the crossover from an indirect band gap semiconductor at mutilayers to a
direct-gap one at monolayers. The PL spectra and first-principle calculations
consistently reveal a spin-valley coupling of 0.4 eV which suppresses
interlayer hopping and manifests as a thickness independent splitting pattern
at valence band edge near K points. This giant spin-valley coupling, together
with the valley dependent physical properties, may lead to rich possibilities
for manipulating spin and valley degrees of freedom in these atomically thin 2D
materials
Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions
Light-emitting diodes are of importance for lighting, displays, optical
interconnects, logic and sensors. Hence the development of new systems that
allow improvements in their efficiency, spectral properties, compactness and
integrability could have significant ramifications. Monolayer transition metal
dichalcogenides have recently emerged as interesting candidates for
optoelectronic applications due to their unique optical properties.
Electroluminescence has already been observed from monolayer MoS2 devices.
However, the electroluminescence efficiency was low and the linewidth broad due
both to the poor optical quality of MoS2 and to ineffective contacts. Here, we
report electroluminescence from lateral p-n junctions in monolayer WSe2 induced
electrostatically using a thin boron nitride support as a dielectric layer with
multiple metal gates beneath. This structure allows effective injection of
electrons and holes, and combined with the high optical quality of WSe2 it
yields bright electroluminescence with 1000 times smaller injection current and
10 times smaller linewidth than in MoS2. Furthermore, by increasing the
injection bias we can tune the electroluminescence between regimes of
impurity-bound, charged, and neutral excitons. This system has the required
ingredients for new kinds of optoelectronic devices such as spin- and
valley-polarized light-emitting diodes, on-chip lasers, and two-dimensional
electro-optic modulators.Comment: 13 pages main text with 4 figures + 4 pages upplemental material
A Piezoelectric Immunosensor Using Hybrid Self-Assembled Monolayers for Detection of Schistosoma japonicum
BACKGROUND: The parasite Schistosoma japonicum causes schistosomiasis disease, which threatens human life and hampers economic and social development in some Asian countries. An important lesson learned from efforts to reduce the occurrence of schistosomiasis is that the diagnostic approach must be altered as further progress is made towards the control and ultimate elimination of the disease. METHODOLOGY/PRINCIPAL FINDINGS: Using mixed self-assembled monolayer membrane (mixed SAM) technology, a mixture of mercaptopropionic acid (MPA) and mercaptoethanol (ME) was self-assembled on the surface of quartz crystals by gold-sulphur-bonds. Soluble egg antigens (SEA) of S. japonicum were then cross-linked to the quartz crystal using a special coupling agent. As compared with the traditional single self-assembled monolayer immobilization method, S. japonicum antigen (SjAg) immobilization using mixed self-assembled monolayers exhibits much greater immunoreactivity. Under optimal experimental conditions, the detection range is 1:1500 to 1:60 (infected rabbit serum dilution ratios). We measured several infected rabbit serum samples with varying S. japonicum antibody (SjAb) concentrations using both immunosensor and ELISA techniques and then produced a correlation analysis. The correlation coefficients reached 0.973. CONCLUSIONS/SIGNIFICANCE: We have developed a new, simple, sensitive, and reusable piezoelectric immunosensor that directly detects SjAb in the serum. This method may represent an alternative to the current diagnostic methods for S. japonicum infection in the clinical laboratory or for analysis outside the laboratory
Finite Element Modelling and Damage Detection of Seam Weld
© Springer Nature Singapore Pte Ltd 2020. Seam welds are widely used in assembled structures for connecting components. However, the dynamic effects of a seam weld are often difficult to characterise in numerical models for several reasons: (1) it is often not wise to build a fine mesh on the seam line which will add considerable computational cost for a structure with many welds, (2) the mechanical properties of weld materials are not well known; (3) sometimes some geometric information about welds is not known beforehand. In this work, the finite element model of a welding connection part is developed by employing CSEAM element in NASTRAN and its feasibility for representing a seam weld is investigated. Based on this result, a damage detection method by updating the properties of the built CSEAM elements is also proposed for welding quality assurance. The damage takes the form of a gap in the weld which causes a sharp change of model strain energy at the edges of the gap for certain vibration modes. Specifically, the model strain energy shape is used as the objective function. A Kriging model is introduced for efficiency and simulation of a T-shaped welded plate structure to demonstrate the effectiveness of this method
Cross-Linking Amine-Rich Compounds into High Performing Selective CO2 Absorbents
Amine-based absorbents play a central role in CO2 sequestration and utilization. Amines react selectively with CO2, but a drawback is the unproductive weight of solvent or support in the absorbent. Efforts have focused on metal organic frameworks (MOFs) reaching extremely high CO2 capacity, but limited selectivity to N2 and CH4, and decreased uptake at higher temperatures. A desirable system would have selectivity (cf. amine) and high capacity (cf. MOF), but also increased adsorption at higher temperatures. Here, we demonstrate a proof-of-concept where polyethyleneimine (PEI) is converted to a high capacity and highly selective CO2 absorbent using buckminsterfullerene (C60) as a cross-linker. PEI-C60 (CO2 absorption of 0.14 g/g at 0.1 bar/90°C) is compared to one of the best MOFs, Mg-MOF-74 (0.06 g/g at 0.1 bar/90°C), and does not absorb any measurable amount of CH4 at 50 bar. Thus, PEI-C60 can perform better than MOFs in the sweetening of natural gas
Effect of Trace Boron on Microstructure and Mechanical Properties of Ti-9V-3Al-3Cr-3Zr-35Mo Alloy
Conference Name:2nd International Conference on Manufacturing Science and Engineering. Conference Address: Guilin, PEOPLES R CHINA. Time:APR 09-11, 2011.The effects of trace boron on microstructure and mechanical properties of beta type Ti-9V-3Al-3Cr-3Zr-3.5Mo (wt. %) alloy have been investigated in this study. Upon the addition of 0.02 wt. % boron, the grain size of the B-modified alloy was almost four times smaller than that of the B-free alloy. Accordingly, the tensile strength and elongation of B-modified alloy increased from 712 MPa and 14.6 % to 813 MPa and 17.9 %, respectively, mainly due to the effect of grain refinement
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