24,453 research outputs found

    Photoemission Spectroscopy of Magnetic and Non-magnetic Impurities on the Surface of the Bi2_2Se3_3 Topological Insulator

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    Dirac-like surface states on surfaces of topological insulators have a chiral spin structure that suppresses back-scattering and protects the coherence of these states in the presence of non-magnetic scatterers. In contrast, magnetic scatterers should open the back- scattering channel via the spin-flip processes and degrade the state's coherence. We present angle-resolved photoemission spectroscopy studies of the electronic structure and the scattering rates upon adsorption of various magnetic and non-magnetic impurities on the surface of Bi2_2Se3_3, a model topological insulator. We reveal a remarkable insensitivity of the topological surface state to both non-magnetic and magnetic impurities in the low impurity concentration regime. Scattering channels open up with the emergence of hexagonal warping in the high-doping regime, irrespective of the impurity's magnetic moment.Comment: 5 pages, 4 figure

    Universal quasiparticle decoherence in hole- and electron-doped high-Tc cuprates

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    We use angle-resolved photoemission to unravel the quasiparticle decoherence process in the high-TcT_c cuprates. The coherent band is highly renormalized, and the incoherent part manifests itself as a nearly vertical ``dive'' in the EE-kk intensity plot that approaches the bare band bottom. We find that the coherence-incoherence crossover energies in the hole- and electron-doped cuprates are quite different, but scale to their corresponding bare bandwidth. This rules out antiferromagnetic fluctuations as the main source for decoherence. We also observe the coherent band bottom at the zone center, whose intensity is strongly suppressed by the decoherence process. Consequently, the coherent band dispersion for both hole- and electron-doped cuprates is obtained, and is qualitatively consistent with the framework of Gutzwiller projection.Comment: 4 pages, 4 figure

    High-energy kink in high-temperature superconductors

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    In conventional metals, electron-phonon coupling, or the phonon-mediated interaction between electrons, has long been known to be the pairing interaction responsible for the superconductivity. The strength of this interaction essentially determines the superconducting transition temperature TC. One manifestation of electron-phonon coupling is a mass renormalization of the electronic dispersion at the energy scale associated with the phonons. This renormalization is directly observable in photoemission experiments. In contrast, there remains little consensus on the pairing mechanism in cuprate high temperature superconductors. The recent observation of similar renormalization effects in cuprates has raised the hope that the mechanism of high temperature superconductivity may finally be resolved. The focus has been on the low energy renormalization and associated "kink" in the dispersion at around 50 meV. However at that energy scale, there are multiple candidates including phonon branches, structure in the spin-fluctuation spectrum, and the superconducting gap itself, making the unique identification of the excitation responsible for the kink difficult. Here we show that the low-energy renormalization at ~50 meV is only a small component of the total renormalization, the majority of which occurs at an order of magnitude higher energy (~350 meV). This high energy kink poses a new challenge for the physics of the cuprates. Its role in superconductivity and relation to the low-energy kink remains to be determined.Comment: 13 pages, 4 figure

    Measurement of an Exceptionally Weak Electron-Phonon Coupling on the Surface of the Topological Insulator Bi2_2Se3_3 Using Angle-Resolved Photoemission Spectroscopy

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    Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these states should have to remain coherent at ambient temperatures. Here, we studied temperature dependence of the electronic structure and the scattering rates on the surface of a model topological insulator, Bi2_2Se3_3, by high resolution angle-resolved photoemission spectroscopy. We found an extremely weak broadening of the topological surface state with temperature and no anomalies in the state's dispersion, indicating exceptionally weak electron-phonon coupling. Our results demonstrate that the topological surface state is protected not only from elastic scattering on impurities, but also from scattering on low-energy phonons, suggesting that topological insulators could serve as a basis for room temperature electronic devices.Comment: published version, 5 pages, 4 figure

    Demonstration of Non-Deterministic Quantum Logic Operations using Linear Optical Elements

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    Knill, Laflamme, and Milburn recently showed that non-deterministic quantum logic operations could be performed using linear optical elements, additional photons (ancilla), and post-selection based on the output of single-photon detectors [Nature 409, 46 (2001)]. Here we report the experimental demonstration of two logic devices of this kind, a destructive controlled-NOT (CNOT) gate and a quantum parity check. These two devices can be combined with a pair of entangled photons to implement a conventional (non-destructive) CNOT that succeeds with a probability of 1/4.Comment: 4 pages, 5 figures; Minor change

    On-Chip Matching Networks for Radio-Frequency Single-Electron-Transistors

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    In this letter, we describe operation of a radio-frequency superconducting single electron transistor (RF-SSET) with an on-chip superconducting LC matching network consisting of a spiral inductor L and its capacitance to ground. The superconducting network has a lower parasitic capacitance and gives a better matching for the RF-SSET than does a commercial chip inductor. Moreover, the superconducting network has negligibly low dissipation, leading to sensitive response to changes in the RF-SSET impedance. The charge sensitivity 2.4*10^-6 e/(Hz)^1/2 in the sub-gap region and energy sensitivity of 1.9 hbar indicate that the RF-SSET is operating in the vicinity of the shot noise limit.Comment: 3 pages, 3 figures, REVTeX 4. To appear in Appl. Phys. Let
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