Magnetoresistance of atomic-scale electromigrated nickel nanocontacts

We report measurements of the electron transport through atomic-scale constrictions and tunnel junctions between ferromagnetic electrodes. Structures are fabricated using a combination of e-beam lithography and controlled electromigration. Sample geometries are chosen to allow independent control of electrode bulk magnetizations. As junction size is decreased to the single channel limit, conventional anisotropic magnetoresistance (AMR) increases in magnitude, approaching the size expected for tunneling magnetoresistance (TMR) upon tunnel junction formation. Significant mesoscopic variations are seen in the magnitude and sign of the magnetoresistance, and no evidence is found of large ballistic magnetoresistance effects.Comment: 3 pages, 3 figure

Three-terminal devices to examine single molecule conductance switching

We report electronic transport measurements of single-molecule transistor devices incorporating bipyridyl-dinitro oligophenylene-ethynylene dithiol (BPDN-DT), a molecule known to exhibit conductance switching in other measurement configurations. We observe hysteretic conductance switching in 8% of devices with measurable currents, and find that dependence of the switching properties on gate voltage is rare when compared to other single-molecule transistor devices. This suggests that polaron formation is unlikely to be responsible for switching in these devices. We discuss this and alternative switching mechanisms.Comment: 5 pages, 4 figures. Supporting material available upon reques

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena due to their charge stability and robust electronic properties after thermal cycling. However these devices require a large top-gate which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here we demonstrate rf reflectometry is possible in an undoped SET.Comment: Four pages, three figures, one supplementary fil

Kondo resonances and anomalous gate dependence of electronic conduction in single-molecule transistors

We report Kondo resonances in the conduction of single-molecule transistors based on transition metal coordination complexes. We find Kondo temperatures in excess of 50 K, comparable to those in purely metallic systems. The observed gate dependence of the Kondo temperature is inconsistent with observations in semiconductor quantum dots and a simple single-dot-level model. We discuss possible explanations of this effect, in light of electronic structure calculations.Comment: 5 pages, four figures. Supplementary material at http://www.ruf.rice.edu/~natelson/publications.htm

Universal Scaling of Nonequilibrium Transport in the Kondo Regime of Single Molecule Devices

Scaling laws and universality are often associated with systems exhibiting emergent phenomena possessing a characteristic energy scale. We report nonequilibrium transport measurements on two different types of single-molecule transistor (SMT) devices in the Kondo regime. The conductance at low bias and temperature adheres to a scaling function characterized by two parameters. This result, analogous to that reported recently in semiconductor dots with Kondo temperatures two orders of magnitude lower, demonstrates the universality of this scaling form. We compare the extracted values of the scaling coefficients to previous experimental and theoretical results.Comment: 4.5 pages, 3 figure

Inelastic electron tunneling via molecular vibrations in single-molecule transistors

In single-molecule transistors, we observe inelastic cotunneling features that correspond energetically to vibrational excitations of the molecule, as determined by Raman and infrared spectroscopy. This is a form of inelastic electron tunneling spectroscopy of single molecules, with the transistor geometry allowing in-situ tuning of the electronic states via a gate electrode. The vibrational features shift and change shape as the electronic levels are tuned near resonance, indicating significant modification of the vibrational states. When the molecule contains an unpaired electron, we also observe vibrational satellite features around the Kondo resonance.Comment: 5 pages, 4 figures. Supplementary information available upon reques

Propagation effects at low frequencies seen in the LOFAR long-term monitoring of the periodically active FRB 20180916B

LOFAR (LOw Frequency ARray) has previously detected bursts from the periodically active, repeating fast radio burst (FRB) source FRB 20180916B down to unprecedentedly low radio frequencies of 110 MHz. Here, we present 11 new bursts in 223 more hours of continued monitoring of FRB 20180916B in the 110–188 MHz band with LOFAR. We place new constraints on the source’s activity window w = 4.3+0.7-0.2 d and phase centre φ LOFARc  = 0.67+0.03-0.02 in its 16.33-d activity cycle, strengthening evidence for its frequency-dependent activity cycle. Propagation effects like Faraday rotation and scattering are especially pronounced at low frequencies and constrain properties of FRB 20180916B’s local environment. We track variations in scattering and time–frequency drift rates, and find no evidence for trends in time or activity phase. Faraday rotation measure (RM) variations seen between June 2021 and August 2022 show a fractional change >50 per cent with hints of flattening of the gradient of the previously reported secular trend seen at 600 MHz. The frequency-dependent window of activity at LOFAR appears stable despite the significant changes in RM, leading us to deduce that these two effects have different causes. Depolarization of and within individual bursts towards lower radio frequencies is quantified using LOFAR’s large fractional bandwidth, with some bursts showing no detectable polarization. However, the degree of depolarization seems uncorrelated to the scattering time-scales, allowing us to evaluate different depolarization models. We discuss these results in the context of models that invoke rotation, precession, or binary orbital motion to explain the periodic activity of FRB 20180916B

Electronic and optical properties of electromigrated molecular junctions

Electromigrated nanoscale junctions have proven very useful for studying electronic transport at the single-molecule scale. However, confirming that conduction is through precisely the molecule of interest and not some contaminant or metal nanoparticle has remained a persistent challenge, typically requiring a statistical analysis of many devices. We review how transport mechanisms in both purely electronic and optical measurements can be used to infer information about the nanoscale junction configuration. The electronic response to optical excitation is particularly revealing. We briefly discuss surface-enhanced Raman spectroscopy on such junctions, and present new results showing that currents due to optical rectification can provide a means of estimating the local electric field at the junction due to illumination.Comment: 19 pages, 8 figures, invited paper for forthcoming special issue of Journal of Physics: Condensed Matter. For other related papers, see http://www.ruf.rice.edu/~natelson/publications.htm