Repeating head-on collisions in an optical trap and the evaluation of spin-dependent interactions among neutral particles

A dynamic process of repeating collisions of a pair of trapped neutral particles with weak spin-dependent interaction is designed and studied. Related theoretical derivation and numerical calculation have been performed to study the inherent coordinate-spin and momentum-spin correlation. Due to the repeating collisions the effect of the weak interaction can be accumulated and enlarged, and therefore can be eventually detected. Numerical results suggest that the Cr-Cr interaction, which has not yet been completely clear, could be thereby determined. The design can be in general used to determine various interactions among neutral atoms and molecules, in particular for the determination of very weak forces.Comment: 15 pages, 7 figure

Methylation of CpG island is not a ubiquitous mechanism for the loss of oestrogen receptor in breast cancer cells.

Methylation has been shown to play an important role in the down-regulation of oestrogen receptors (ER) in breast cancer cells. One critical question that remains unclear is whether methylation can account for the loss of ER expression in cells derived from an ER-positive cell line. This laboratory has established an in vitro cell system using long-term growth of human ER-positive breast cancer cell line T47D in oestrogen-free medium. A clonal cell line, T47D:C4:2 (C4:2), has been characterized. Unlike T47D:A18 (A18), which is a T47D line maintained in oestrogen medium, C4:2 has lost the expression of ER and hormone responsiveness. DNA fingerprinting and restriction fragment length polymorphism (RFLP) analysis results confirmed that C4:2 was of the same lineage as A18. These cell lines provide an invaluable system to study the mechanism of ER expression and regulatory pathways leading to hormone-independent growth. The results here clearly demonstrate that the ER CpG island in C4:2 cells remains unmethylated. The loss of ER in the cell line must be due to mechanisms other than methylation. We also evaluated the ER CpG island in the MDA-MB-231:10A (10A) cell line, which is a clone from the MDA-MB-231 line obtained from ATCC and the DNA from the MDA-MB-231 cell line used in the original report. Unlike the cell line from the report, which showed a full methylation pattern in the island, the 10A line only showed a partial methylation pattern in the CpG island. Possible mechanisms pertaining to the heterogeneous methylation pattern of the ER CpG island in the breast cancer cells are discussed

Phosphoenolpyruvate Carboxykinase Is Involved in the Decarboxylation of Aspartate in the Bundle Sheath of Maize

We recently showed that maize (Zea mays L.) leaves contain appreciable amounts of phosphoenolpyruvate carboxykinase (PEPCK; R.P. Walker, R.M. Acheson, L.I. Técsi, R.C. Leegood [1997] Aust J Plant Physiol 24: 459–468). In the present study, we investigated the role of PEPCK in C4 photosynthesis in maize. PEPCK activity and protein were enriched in extracts from bundle-sheath (BS) strands compared with whole-leaf extracts. Decarboxylation of [4-14C]aspartate (Asp) by BS strands was dependent on the presence of 2-oxoglutarate and Mn2+, was stimulated by ATP, was inhibited by the PEPCK-specific inhibitor 3-mercaptopicolinic acid, and was independent of illumination. The principal product of Asp metabolism was phosphoenolpyruvate, whereas pyruvate was a minor product. Decarboxylation of [4-14C]malate was stimulated severalfold by Asp and 3-phosphoglycerate, was only slightly reduced in the absence of Mn2+ or in the presence of 3-mercaptopicolinic acid, and was light dependent. Our data show that decarboxylation of Asp and malate in BS cells of maize occurs via two different pathways: Whereas malate is mainly decarboxylated by NADP-malic enzyme, decarboxylation of Asp is dependent on the activity of PEPCK

High-performance nn-type organic field-effect transistors with ionic liquid gates

High-performance $n$-type organic field-effect transistors were developed with ionic-liquid gates and N,N$^"$-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals. Transport measurements show that these devices reproducibly operate in ambient atmosphere with negligible gate threshold voltage and mobility values as high as 5.0 cm$^2$/Vs. These mobility values are essentially identical to those measured in the same devices without the ionic liquid, using vacuum or air as the gate dielectric. Our results indicate that the ionic-liquid and $n$-type organic semiconductor interfaces are suitable to realize high-quality $n$-type organic transistors operating at small gate voltage, without sacrificing electron mobility

Continuous-wave operation of extremely low-threshold GaAs/AlGaAs broad-area injection lasers on (100)Si substrates at room temperature

Room-temperature continuous-wave operation of large-area (120 μm X 980 μm) GaAs/AlGaAs graded-refractive-index separate-confinement heterostructure lasers on (100) Si substrates has been obtained. Minimum threshold-current densities of 214 A/cm2 (1900-μm cavity length), maximum slope efficiencies of about 0.8 W/A (600-μm cavity length), and optical power in excess of 270 mW/facet (900-μm cavity length) have been observed under pulsed conditions

High efficiency single quantum well graded-index separate-confinement heterostructure lasers fabricated with MeV oxygen ion implantation

Single quantum well AlGaAs/GaAs graded-index separate-confinement heterostructure lasers have been fabricated using MeV oxygen ion implantation plus optimized subsequent thermal annealing. A high differential quantum efficiency of 85% has been obtained in a 360-µm-long and 10-µm-wide stripe geometry device. The results have also demonstrated that excellent electrical isolation (breakdown voltage of over 30 V) and low threshold currents (22 mA) can be obtained with MeV oxygen ion isolation. It is suggested that oxygen ion implantation induced selective carrier compensation and compositional disordering in the quantum well region as well as radiation-induced lattice disordering in AlxGa1–xAs/GaAs may be mostly responsible for the buried layer modification in this fabrication process