Efficient Er/O‐Doped Silicon Light‐Emitting Diodes at Communication Wavelength by Deep Cooling

A silicon light source at the communication wavelength is the bottleneck for developing monolithically integrated silicon photonics. Doping silicon with erbium and oxygen ions is considered one of the most promising approaches to produce silicon light sources. However, this method suffers from a high concentration of defects in the form of nonradiative recombination centers at the interface between the crystalline silicon and large Er2O3/ErSi1.7 precipitates during the standard rapid thermal treatment. Here, a deep cooling process is applied to suppress the growth of these precipitates by flushing the high‐temperature Er/O‐doped silicon substrates with helium gas cooled in liquid nitrogen. The resultant light‐emitting efficiency at room temperature is enhanced by two orders of magnitude in comparison with that of the sample treated via standard rapid thermal annealing. The deep‐cooling‐processed Si samples are further processed into light‐emitting diodes. Bright electroluminescence with a main spectral peak at 1536 nm is also observed from the silicon‐based diodes with the external quantum efficiency reaching ≈0.8% at room temperature. Based on these results, the development of electrically driven silicon optical amplifiers or even lasers at communication wavelengths is promising for monolithically integrated silicon photonics.A deep cooling technique is developed for silicon light sources by suppressing the growth of Er/O‐related precipitates. The resultant near‐infrared emission shows efficiency enhancement by two orders of magnitude. Bright electroluminescence with a main spectral peak at 1536 nm is also observed. The external quantum efficiency can reach 0.8% at room temperature.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/162702/3/adom202000720.pdfhttp://deepblue.lib.umich.edu/bitstream/2027.42/162702/2/adom202000720-sup-0001-SuppMat.pdfhttp://deepblue.lib.umich.edu/bitstream/2027.42/162702/1/adom202000720_am.pd

Germline Predisposition and Copy Number Alteration in Pre-stage Lung Adenocarcinomas Presenting as Ground-Glass Nodules

Objective: Synchronous multiple ground-glass nodules (SM-GGNs) are a distinct entity of lung cancer which has been emerging increasingly in recent years in China. The oncogenesis molecular mechanisms of SM-GGNs remain elusive.Methods: We investigated single nucleotide variations (SNV), insertions and deletions (INDEL), somatic copy number variations (CNV), and germline mutations of 69 SM-GGN samples collected from 31 patients, using target sequencing (TRS) and whole exome sequencing (WES).Results: In the entire cohort, many known driver mutations were found, including EGFR (21.7%), BRAF (14.5%), and KRAS (6%). However, only one out of the 31 patients had the same somatic missense or truncated events within SM-GGNs, indicating the independent origins for almost all of these SM-GGNs. Many germline mutations with a low frequency in the Chinese population, and genes harboring both germline and somatic variations, were discovered in these pre-stage GGNs. These GGNs also bore large segments of copy number gains and/or losses. The CNV segment number tended to be positively correlated with the germline mutations (r = 0.57). The CNV sizes were correlated with the somatic mutations (r = 0.55). A moderate correlation (r = 0.54) was also shown between the somatic and germline mutations.Conclusion: Our data suggests that the precancerous unstable CNVs with potentially predisposing genetic backgrounds may foster the onset of driver mutations and the development of independent SM-GGNs during the local stimulation of mutagens

Defect and doping properties of sliding ferroelectric γ-InSe for photovoltaic applications

Layered van der Waals (vdw) materials have been proposed as light-absorbing materials for photovoltaic applications. InSe is a layered vdw semiconductor with ultra-high carrier mobility, strong charge transfer ability, super deformability, thermoelectricity, and optoelectronic properties. Its γ phase, or γ-InSe, was greatly stabilized by doping recently, which also exhibits sliding ferroelectricity. In this study, we propose that γ-phase InSe (γ-InSe), which was recently synthesized in a high-quality bulk phase, could be an excellent light-absorbing material candidate. Based on the first-principles simulations, bulk γ-InSe is found to possess suitable bandgap, decent absorption, and low effective mass. The investigation of defect properties reveals the major defect types, defect levels, and deep-level defects that could possibly harm the efficiency, and the deep-level defects can be significantly suppressed under Se-rich conditions. In addition, γ-InSe is intrinsically n-type, which can be tuned into weak p-type by Zn and Cd doping. We also identify the defect types of Y and Bi doping, which have been experimentally used to adjust the mechanical property of γ-InSe, and find that Y interstices could play an important role in improving the stiffness of γ-InSe. Our study provides theoretical insights for photovoltaic and other photoelectronic applications based on this interesting ferroelectric layered vdw material

Facile MOF Support Improvement in Synergy with Light Acceleration for Efficient Nanoalloy-Catalyzed H2 Production from Formic Acid

International audienceHydrogen (H2) generation and storage are actively investigated to provide a green source of energy, and formic acid (HCOOH), a major product obtained from the biomass, is regarded as a productive source of H2. Therefore, improvements in heterogeneous catalysts are called for. Here, a novel type of catalyst support is proposed involving simple addition of the mixture of metal ion precursors to core-shell ZIF-8@ZIF-67, followed by reduction with NaBH4, with performances surpassing those obtained using nanocatalysts in ZIF-8 or ZIF-67. The nanocatalysts PdxAg were optimized with ZIF-8@Pd2Ag1@ZIF-67 under visible-light illumination for selective HCOOH dehydrogenation involving a turnover frequency value of 430 h-1 under light irradiation at 353 K. These results also reveal the crucial roles of the Pd sites electronically promoted in the presence of visible by the plasmon resonance and the core-shell light by Ag plasmon advantageous MOF structure. In order to examine the potential of extending this catalyst improvement principle to other catalytic reactions, 4nitrophenol reduction, a benchmarking model of catalytic reaction, was tested, and the results also confirmed the superiority of the performance of ZIF-8@Pd2Ag1@ZIF-67 over Pd2Ag1@ZIF-8 and Pd2Ag1@ZIF-67, confirming the interest in the novel catalyst design

Atomic Insights into Ti Doping on the Stability Enhancement of Truncated Octahedron LiMn₂O₄ Nanoparticles

Ti-doped truncated octahedron LiTixMn2-xO4 nanocomposites were synthesized through a facile hydrothermal treatment and calcination process. By using spherical aberration-corrected scanning transmission electron microscopy (Cs-STEM), the effects of Ti-doping on the structure evolution and stability enhancement of LiMn2O4 are revealed. It is found that truncated octahedrons are easily formed in Ti doping LiMn2O4 material. Structural characterizations reveal that most of the Ti4+ ions are composed into the spinel to form a more stable spinel LiTixMn2−xO4 phase framework in bulk. However, a portion of Ti4+ ions occupy 8a sites around the {001} plane surface to form a new TiMn2O4-like structure. The combination of LiTixMn2−xO4 frameworks in bulk and the TiMn2O4-like structure at the surface may enhance the stability of the spinel LiMn2O4. Our findings demonstrate the critical role of Ti doping in the surface chemical and structural evolution of LiMn2O4 and may guide the design principle for viable electrode materials

Modulation of Ferroelectric and Optical Properties of La/Co-Doped KNbO3 Ceramics

The phase transition, microscopic morphology and optical and ferroelectric properties are studied in a series of La- and Co-doped KNbO3-based ceramics. The results show that the doping induces the transformation from the orthorhombic to the cubic phase of KNbO3, significantly reduces the optical bandgap and simultaneously evidently improves the leakage, with a slight weakening of ferroelectric polarization. Further analysis reveals that (i) the Co doping is responsible for the obvious reduction of the bandgap, whereas it is reversed for the La doping; (ii) the slight deterioration of ferroelectricity is due to the doping-induced remarkable extrinsic defect levels and intrinsic oxygen vacancies; and (iii) the La doping can optimize the defect levels and inhibit the leakage. This investigation should both provide novel insight for exploring the bandgap engineering and ferroelectric properties of KNbO3, and suggest its potential applications, e.g., photovoltaic and multifunctional materials