39 research outputs found

    Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots

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    The experimental results on synthesis of Si/Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation energies of the emission process from localized states are calculated for two types of structures. Current-voltage characteristics without illumination and under illumination are measured

    Single-element 2D materials beyond graphene: methods of epitaxial synthesis

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    Today, two-dimensional materials are one of the key research topics for scientists around the world. Interest in 2D materials is not surprising because, thanks to their remarkable mechanical, thermal, electrical, magnetic, and optical properties, they promise to revolutionize electronics. The unique properties of graphene-like 2D materials give them the potential to create completely new types of devices for functional electronics, nanophotonics, and quantum technologies. This paper considers epitaxially grown two-dimensional allotropic modifications of single elements: graphene (C) and its analogs (transgraphenes) borophene (B), aluminene (Al), gallenene (Ga), indiene (In), thallene (Tl), silicene (Si), germanene (Ge), stanene (Sn), plumbene (Pb), phosphorene (P), arsenene (As), antimonene (Sb), bismuthene (Bi), selenene (Se), and tellurene (Te). The emphasis is put on their structural parameters and technological modes in the method of molecular beam epitaxy, which ensure the production of high-quality defect-free single-element two-dimensional structures of a large area for promising device applications

    Russian consensus on exoand endocrine pancreatic insufficiency after surgical treatment

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    The Russian consensus on exo - and endocrine pancreatic insufficiency after surgical treatment was prepared on the initiative of the Russian "Pancreatic Club" on the Delphi method. His goal was to clarify and consolidate the opinions of specialists on the most relevant issues of diagnosis and treatment of exo - and endocrine insufficiency after surgical interventions on the pancreas. An interdisciplinary approach is provided by the participation of leading gastroenterologists and surgeons

    Встречаемость мутаций в генах BRCA1 и BRCA2 у больных раком поджелудочной железы

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    BRCA1 and BRCA2 may contribute in pancreatic cancer (PC) risk, however the selection criteria for BRCA1 testing are poorly defined. The analysis of Russian founder mutation BRCA1 5382insC in 150 PC patients identified 2 carriers. BRCA2 full-length sequencing of 8 DNA samples revealed 1 mutated allele (BRCA2 5197_5198delTC). All 3 carriers of BRCA1/2 mutations reported personal or familial history of BRCA-related cancers. Thus, BRCA1/2 testing is particularlyМутации в генах BRCA1 и BRCA2 могут играть роль в формировании риска рака поджелудочной железы (РПЖ), однако критерии включения пациентов в BRCA-диагностику остаются неясными. Присутствие повторяющейся мутации BRCA1 5382insC анализировалось у 150 больных РПЖ, при этом выявлено 2 носителя упомянутого аллеля. Полный анализ кодирующей области гена BRCA2 выполнен у 8 пациентов, обнаружен 1 дефектный вариант (BRCA2 5197_5198delTC). Все 3 больных с мутацией имели собственный или семейный анамнез BRCA-ассоциированных онкологических заболеваний. Таким образом, BRCA-тестирование случаев РПЖ целесообразно ограничить только теми пациентами, у которых имеются клинические признаки наследственного характера заболевани

    Stress state of laminar composites

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    Growth of germanium quantum dots on oxidized silicon surface

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    Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic model o

    Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots

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    The experimental results on synthesis of Si/Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation energies of the emission process from localized states are calculated for two types of structures. Current-voltage characteristics without illumination and under illumination are measured
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