Quantum size effects on the perpendicular upper critical field in ultra-thin lead films

We report the thickness-dependent (in terms of atomic layers) oscillation behavior of the perpendicular upper critical field $H_{c2\perp}$ in the ultra-thin lead films at the reduced temperature ($t=T/T_c$). Distinct oscillations of the normal-state resistivity as a function of film thickness have also been observed. Compared with the $T_c$ oscillation, the $H_{c2\perp}$ shows a considerable large oscillation amplitude and a $\pi$ phase shift. The oscillatory mean free path caused by quantum size effect plays a role in $H_{c2\perp}$ oscillation.Comment: 4 pages, 4 figure

Nanotransformation and current fluctuations in exciton condensate junctions

We analyze the nonlinear transport properties of a bilayer exciton condensate that is contacted by four metallic leads by calculating the full counting statistics of electron transport for arbitrary system parameters. Despite its formal similarity to a superconductor the transport properties of the exciton condensate turn out to be completely different. We recover the generic features of exciton condensates such as counterpropagating currents driven by excitonic Andreev reflections and make predictions for nonlinear transconductance between the layers as well as for the current (cross)correlations and generalized Johnson-Nyquist relationships. Finally, we explore the possibility of connecting another mesoscopic system (in our case a quantum point contact) to the bottom layer of the exciton condensate and show how the excitonic Andreev reflections can be used for transforming voltage at the nanoscale.Comment: 5 pages, 4 figures, accepted by PR

Kondo effect and spin-active scattering in ferromagnet-superconductor junctions

We study the interplay of superconducting and ferromagnetic correlations on charge transport in different geometries with a focus on both a quantum point contact as well as a quantum dot in the even and the odd state with and without spin-active scattering at the interface. In order to obtain a complete picture of the charge transport we calculate the full counting statistics in all cases and compare the results with experimental data. We show that spin-active scattering is an essential ingredient in the description of quantum point contacts. This holds also for quantum dots in an even charge state whereas it is strongly suppressed in a typical Kondo situation. We explain this feature by the strong asymmetry of the hybridisations with the quantum dot and show how Kondo peak splitting in a magnetic field can be used for spin filtering. For the quantum dot in the even state spin-active scattering allows for an explanation of the experimentally observed mini-gap feature.Comment: 14 pages, 7 figures, accepted by PR

Structural and magneto-transport properties of electrodeposited bismuth nanowires

Arrays of semimetallic Bi nanowires have been successfully fabricated by electrodeposition. Each nanowire consists of elongated Bi grains along the wire direction. Very large positive magnetoresistance of 300% at low temperatures and 70% at room temperature with quasilinear field dependence has been observed. These features are desirable for wide-range field sensing applications. © 1998 American Institute of Physics

High-frequency transport in pp-type Si/Si0.87_{0.87}Ge0.13_{0.13} heterostructures studied with surface acoustic waves in the quantum Hall regime

The interaction of surface acoustic waves (SAW) with $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures has been studied for SAW frequencies of 30-300 MHz. For temperatures in the range 0.7$<T<$1.6 K and magnetic fields up to 7 T, the SAW attenuation coefficient $\Gamma$ and velocity change $\Delta V /V$ were found to oscillate with filling factor. Both the real $\sigma_1$ and imaginary $\sigma_2$ components of the high-frequency conductivity have been determined and compared with quasi-dc magnetoresistance measurements at temperatures down to 33 mK. By analyzing the ratio of $\sigma_1$ to $\sigma_2$, carrier localization can be followed as a function of temperature and magnetic field. At $T$=0.7 K, the variations of $\Gamma$, $\Delta V /V$ and $\sigma_1$ with SAW intensity have been studied and can be explained by heating of the two dimensional hole gas by the SAW electric field. Energy relaxation is found to be dominated by acoustic phonon deformation potential scattering with weak screening.Comment: Accepted for publication in PR

Spin precession observation in quantum corrections to resistance of Si 0:7 Ge 0:3 =Si 0:2 Ge 0:8 heterostructure with 2DHG

Abstract The two-dimensional hole gas (2DHG) magnetoresistivity of a Si0:7Ge0:3=Si0:2Ge0:8 heterostructure in a wide range of temperatures T = 0:335-20 K and transport currents I = 100-50 A is measured. In the vicinity of zero magnetic ÿeld, a sharp and positive in sign feature on smooth negative magnetoresistance is observed at the lowest temperatures. The amplitude of this feature quickly fades with increasing temperature and transport current. For the analysis of the experimental data the theory of weak localization for 2DHG is applied. The values of so and tr obtained are used for the ÿrst time to deÿne zero magnetic ÿeld splitting in the hole energy spectrum for a Si0:7Ge0:3=Si0:2Ge0:8 heterostructure: = 2:97 meV.

Applying voltage sources to a Luttinger liquid with arbitrary transmission

The Landauer approach to transport in mesoscopic conductors has been generalized to allow for strong electronic correlations in a single-channel quantum wire. We describe in detail how to account for external voltage sources in adiabatic contact with a quantum wire containing a backscatterer of arbitrary strength. Assuming that the quantum wire is in the Luttinger liquid state, voltage sources lead to radiative boundary conditions applied to the displacement field employed in the bosonization scheme. We present the exact solution of the transport problem for arbitrary backscattering strength at the special Coulomb interaction parameter g=1/2.Comment: 9 pages REVTeX, incl 2 fig

Large Magnetoresistance and Finite-Size Effects in Electrodeposited Single-Crystal Bi Thin Films

Trigonal-axis oriented single-crystal Bi thin films have been made by electrodeposition followed by suitable annealing. Very large magnetoresistance with ratios as much as 1500 at 5 K and 2.9 at 300 K under 5 T, Shubnikov-de Haas oscillations, and finite-size effects have been observed. © 1999 The American Physical Society