Precise-Spike-Driven synaptic plasticity: Learning hetero-association of spatiotemporal spike patterns

10.1371/journal.pone.0078318PLoS ONE811-POLN

Electron Spin Decoherence in Bulk and Quantum Well Zincblende Semiconductors

A theory for longitudinal (T1) and transverse (T2) electron spin coherence times in zincblende semiconductor quantum wells is developed based on a non-perturbative nanostructure model solved in a fourteen-band restricted basis set. Distinctly different dependences of coherence times on mobility, quantization energy, and temperature are found from previous calculations. Quantitative agreement between our calculations and measurements is found for GaAs/AlGaAs, InGaAs/InP, and GaSb/AlSb quantum wells.Comment: 11 pages, 3 figure

Analytical Simulations for Shaking Table Tests of a Full Scale Buckling Restrained Braced Frame

AbstractThe seismic response tests of a full-scale five-story passively-controlled steel building have been conducted on the EDefense shaking table in Japan in March 2009. Before the tests, a blind prediction contest was held to allow researchers and practitioners from all over the world to construct numerical model and predict the dynamic responses of the building frame equipped with buckling restrained braces or viscous dampers. This paper presents the response predictions made before the tests of the buckling restrained braced frame (BRBF). A three-dimensional shell finite element subassembly model was constructed to investigate the stiffness of the buckling-restrained brace end joint. The dynamic test results of the sample steel dampers provided by the organizer were used to calibrate the BRB strength in the numerical model. The details of the numerical model for the composite beam, hollow structural section column, and the beam-to-column panel zone are described. Base on the numerical and test analyses, effective numerical models are presented and the recommended nonlinear modeling techniques for BRBF are provided

Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing

We demonstrate a promising approach for the monolithic integration of Ge-based nanoelectronics and nanophotonics with S-ilicon: the selective deposition of Ge on Si by Multiple Hydrogen Annealing for Heteroepitaxy (MHAH). Very high quality Ge layers can be selectively integrated on Si CMOS platform with this technique. We confirm the reduction of dislocation density in Ge layers using AFM surface morphology study. In addition, in situ doping of Ge layers is achieved and MOS capacitor structures are studied. ©The Electrochemical Society

Selective-area high-quality germanium growth for monolithic integrated optoelectronics

Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth on Si substrate through SiO 2 windows. The combination of area-dependent growth and multistep deposition/hydrogen annealing cycles has effectively reduced the surface roughness and the threading dislocation density. Low root-mean-square surface roughness of 0.6 nm is confirmed by atomic-force-microscope analysis. Low defect density in the area-dependent grown Ge layer is measured to be as low as 1 × 10 7cm -2 by plan-view transmission-electron-miscroscope analysis. In addition, the excellent metal-semiconductor-metal photodiode characteristics are shown on the grown Ge layer to open up a possibility to merge Ge optoelectronics with Si VLSI. © 2012 IEEE

High-harmonic generation from a confined atom

The order of high harmonics emitted by an atom in an intense laser field is limited by the so-called cutoff frequency. Solving the time-dependent Schr\"odinger equation, we show that this frequency can be increased considerably by a parabolic confining potential, if the confinement parameters are suitably chosen. Furthermore, due to confinement, the radiation intensity remains high throughout the extended emission range. All features observed can be explained with classical arguments.Comment: 4 pages(tex files), 4 figures(eps files); added references and comment

Exact Master Equation and Non-Markovian Decoherence for Quantum Dot Quantum Computing

In this article, we report the recent progress on decoherence dynamics of electrons in quantum dot quantum computing systems using the exact master equation we derived recently based on the Feynman-Vernon influence functional approach. The exact master equation is valid for general nanostructure systems coupled to multi-reservoirs with arbitrary spectral densities, temperatures and biases. We take the double quantum dot charge qubit system as a specific example, and discuss in details the decoherence dynamics of the charge qubit under coherence controls. The decoherence dynamics risen from the entanglement between the system and the environment is mainly non-Markovian. We further discuss the decoherence of the double-dot charge qubit induced by quantum point contact (QPC) measurement where the master equation is re-derived using the Keldysh non-equilibrium Green function technique due to the non-linear coupling between the charge qubit and the QPC. The non-Markovian decoherence dynamics in the measurement processes is extensively discussed as well.Comment: 15 pages, Invited article for the special issue "Quantum Decoherence and Entanglement" in Quantum Inf. Proces

Entangled light in transition through the generation threshold

We investigate continuous variable entangling resources on the base of two-mode squeezing for all operational regimes of a nondegenerate optical parametric oscillator with allowance for quantum noise of arbitrary level. The results for the quadrature variances of a pair of generated modes are obtained by using the exact steady-state solution of Fokker-Planck equation for the complex P-quasiprobability distribution function. We find a simple expression for the squeezed variances in the near-threshold range and conclude that the maximal two-mode squeezing reaches 50% relative to the level of vacuum fluctuations and is achieved at the pump field intensity close to the generation threshold. The distinction between the degree of two-mode squeezing for monostable and bistable operational regimes is cleared up.Comment: 7 pages, 4 figures; Content changed: more details added to the discussion. To be published in Phys. Rev.

High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration

We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) technique. Until now low source/drain series resistance in Ge n-MOSFETs has been a highly challenging problem. Source and drain are formed by implant-free, in-situ doping process for the purpose of very low series resistance and abrupt and shallow n+/p junctions. The novel n-MOSFETs show among the highest electron mobility reported on (100) Ge to-date. Furthermore, these devices provide an excellent Ion/Ioff ratio(4× 103) with very high Ion of 3.23μA/μm. These results show promise towards monolithic integration of Ge MOSFETs with Si CMOS VLSI platform. © 2009 IEEE

High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration

We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications. © 2009 IEEE