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Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing
Authors
A., K. Okyay
Park J.-H.
K.C. Saraswat
Yu H.-Y.
Publication date
1 January 2008
Publisher
'The Electrochemical Society'
Doi
Cite
Abstract
We demonstrate a promising approach for the monolithic integration of Ge-based nanoelectronics and nanophotonics with S-ilicon: the selective deposition of Ge on Si by Multiple Hydrogen Annealing for Heteroepitaxy (MHAH). Very high quality Ge layers can be selectively integrated on Si CMOS platform with this technique. We confirm the reduction of dislocation density in Ge layers using AFM surface morphology study. In addition, in situ doping of Ge layers is achieved and MOS capacitor structures are studied. ©The Electrochemical Society
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Last time updated on 12/11/2016