Estimates on compressed neural networks regression

When the neural element number nn of neural networks is larger than the sample size mm, the overfitting problem arises since there are more parameters than actual data (more variable than constraints). In order to overcome the overfitting problem, we propose to reduce the number of neural elements by using compressed projection AA which does not need to satisfy the condition of Restricted Isometric Property (RIP). By applying probability inequalities and approximation properties of the feedforward neural networks (FNNs), we prove that solving the FNNs regression learning algorithm in the compressed domain instead of the original domain reduces the sample error at the price of an increased (but controlled) approximation error, where the covering number theory is used to estimate the excess error, and an upper bound of the excess error is given

Investigation on strengthening and toughening mechanisms of Nb-Ti-ZrB2 metal matrix ceramic composites reinforced with in situ niobium and titanium boride

Nb-Ti-ZrB2 metal matrix ceramic composites with a fixed atomic ratio Nb/Ti = 2/1 and ZrB2 volume fraction changing from 0, 11 vol%, 23 vol% to 36 vol% were hot pressed at 1600 °C under 30 MPa. The influence of ZrB2 content and Ti addition on the phase constitution, microstructure evolution, toughening mechanisms and strengthening mechanisms were investigated. It was shown that the formation of in situ Nb-rich (Ti,Nb)B and Ti-rich (Nb,Ti)B was attributed to a high mutual solubility of monoborides and the amount of niobium and titanium borides increased with increasing ZrB2 content. The needle-shaped (Ti,Nb)B phase weakened the damage to fracture toughness caused by ZrB2 particle fracture due to crack bridging, crack defection and the pull-out toughening mechanisms. The highest fracture toughness of the Nb-Ti-ZrB2 composites was 12.0 MPa·m1/2. The stiff (Nb,Ti)B phase acted as a strong obstacle to the dislocation motion, leading to dislocation pile-up and enhancing the strength of the Nb-Ti-ZrB2 composites during compression tests. However, stress concentration around the needle-shaped (Ti,Nb)B phase easily leads to crack initiation and extension, resulting in decreased strength. The yield strength of Nb-Ti-ZrB2 composites ranged from 657.3 MPa to 1783.0 MPa owing to the combined influence of the strenghening mechanism caused by (Nb,Ti)B and the weakening mechanism caused by (Ti,Nb)B. The compressive deformation and failure process were also discussed in detail in this study

The Effects of Total Ionizing Dose on the SEU Cross-Section of SOI SRAMs

The total ionizing dose (TID) effects on single-event upset (SEU) hardness are investigated for two silicon-on-insulator (SOI) static random access memories (SRAMs) with different layout structures in this paper. The contrary changing trends of TID on SEU sensitivity for 6T and 7T SOI SRAMs are observed in our experiment. After 800 krad(Si) irradiation, the SEU cross-sections of 6T SRAMs increases by 15%, while 7T SRAMs decreases by 60%. Experimental results show that the SEU cross-sections are not only affected by TID irradiation, but also strongly correlate with the layout structure of the memory cells. Theoretical analysis shows that the decrease of SEU cross-section of 7T SRAM is caused by a raised OFF-state equivalent resistance of the delay transistor N5 after TID exposure, which is because the radiation-induced charges are trapped in the shallow trench, and isolation oxide (STI) and buried oxide (BOX) enhance the carrier scattering rate of delay transistor N5

The Effects of Total Ionizing Dose on the SEU Cross-Section of SOI SRAMs

The total ionizing dose (TID) effects on single-event upset (SEU) hardness are investigated for two silicon-on-insulator (SOI) static random access memories (SRAMs) with different layout structures in this paper. The contrary changing trends of TID on SEU sensitivity for 6T and 7T SOI SRAMs are observed in our experiment. After 800 krad(Si) irradiation, the SEU cross-sections of 6T SRAMs increases by 15%, while 7T SRAMs decreases by 60%. Experimental results show that the SEU cross-sections are not only affected by TID irradiation, but also strongly correlate with the layout structure of the memory cells. Theoretical analysis shows that the decrease of SEU cross-section of 7T SRAM is caused by a raised OFF-state equivalent resistance of the delay transistor N5 after TID exposure, which is because the radiation-induced charges are trapped in the shallow trench, and isolation oxide (STI) and buried oxide (BOX) enhance the carrier scattering rate of delay transistor N5

Color center formation in alpha-Al2O3 induced by high energy heavy ions

Single crystals of alpha-alumina were irradiated at room temperature with 1.157 (GeVFe)-Fe-56, 1.755 (GeVXe)-Xe-136 and 2.636 (GeVU)-U-238 ions to fluences range from 8.7 x 10(9) to 6 x 10(12) ions/cm(2). Virgin and irradiated samples were investigated by ultraviolet visible absorption measurements. The investigation reveals the presence of various color centers (F, F+, F-2(2+), F-2(+) and F-2 centers) appearing in the irradiated samples. It is found that the ratio of peak absorbance of F-2 to F centers increases with the increase of the atomic numbers of the incident ions from Fe, Xe to U ions, so do the absorbance ratio of F-2(2+) to F+ centers and of large defect cluster to F centers, indicating that larger defect clusters are preferred to be produced under heavier ion irradiation. Largest color center production cross-section was found for the U ion irradiation. The number density of single anion vacancy scales better with the energy deposition through processes of nuclear stopping, indicating that the nuclear energy loss processes determines the production of F-type defects in heavy ion irradiated alpha-alumina

Identification of Biomarkers for Methamphetamine Exposure Time Prediction in Mice Using Metabolomics and Machine Learning Approaches

Methamphetamine (METH) abuse has become a global public health and safety problem. More information is needed to identify the time of drug abuse. In this study, methamphetamine was administered to male C57BL/6J mice with increasing doses from 5 to 30 mg kg−1 (once a day, i.p.) for 20 days. Serum and urine samples were collected for metabolomics studies using gas chromatography–mass spectrometry (GC-MS). Six machine learning models were used to infer the time of drug abuse and the best model was selected to predict administration time preliminarily. The metabolic changes caused by methamphetamine were explored. As results, the metabolic patterns of methamphetamine exposure mice were quite different from the control group and changed over time. Specifically, serum metabolomics showed enhanced amino acid metabolism and increased fatty acid consumption, while urine metabolomics showed slowed metabolism of the tricarboxylic acid (TCA) cycle, increased organic acid excretion, and abnormal purine metabolism. Phenylalanine in serum and glutamine in urine increased, while palmitic acid, 5-HT, and monopalmitin in serum and gamma-aminobutyric acid in urine decreased significantly. Among the six machine learning models, the random forest model was the best to predict the exposure time (serum: MAE = 1.482, RMSE = 1.69, R squared = 0.981; urine: MAE = 2.369, RMSE = 1.926, R squared = 0.946). The potential biomarker set containing four metabolites in the serum (palmitic acid, 5-hydroxytryptamine, monopalmitin, and phenylalanine) facilitated the identification of methamphetamine exposure. The random forest model helped predict the methamphetamine exposure time based on these potential biomarkers

Surface Modification and Damage of MeV-Energy Heavy Ion Irradiation on Gold Nanowires

Gold nanowires with diameters ranging from 20 to 90 nm were fabricated by the electrochemical deposition technique in etched ion track polycarbonate templates and were then irradiated by Xe and Kr ions with the energy in MeV range. The surface modification of nanowires was studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterizations. Different craters with and without protrusion on the gold nanowires were analyzed, and the two corresponding formation mechanisms, i.e., plastic flow and micro-explosion, were investigated. In addition, the sputtered gold nanoparticles caused by ion irradiation were studied and it was confirmed that the surface damage produced in gold nanowires was increased as the diameter of the nanowires decreased. It was also found that heavy ion irradiation can also create stacking fault tetrahedrons (SFTs) in gold nanowires and three different SFTs were confirmed in irradiated nanowires. A statistical analysis of the size distribution of SFTs in gold nanowires proved that the average size distribution of SFT was positively related to the nuclear stopping power of incident ions, i.e., the higher nuclear stopping power of incident ions could generate SFT with a larger average size in gold nanowires

A study of the suppression of the high-temperature helium embrittlement in an oxide-particle dispersion strengthened alloy

In this paper, an investigation on the micro-structure of an Fe-base oxide-dispersion-strengthened (ODS) alloy irradiated with high-energy Ne-20 ions to different doses at a temperature around 0.5T(m) (T-m is the melting point of the alloy) is presented. Investigation with the transmission electron microscopy found that the accelerated growth of voids at grain-boundaries, which is usually a concern in conventional Fe-base alloys under conditions of inert-gas implantation, was not observed in the ODS alloy irradiated even to the highest dose (12000 at.ppm Ne). The reason is ascribed to the enhanced recombination of point defects and strong trapping of Ne atoms at the interfaces of the nano-scale oxide particles in grains. The study showed that ODS alloys have good resistance to the high-temperature inter-granular embrittlement due to inert-gas accumulation, exhibiting prominence of application in harsh situations of considerable helium production at elevated temperatures like in a fusion reactor.NSAF Joint Foundation of China 1037603