Spill over effects of Geopolitical risk on the banking sector of CIS countries

This study examines the spill over effects of geopolitical risks (GPR) and extreme shocks on Commonwealth of Independent States (CIS) economies, as result of the Russia – Ukraine war, with particular focus on financial institutions. Further, we investigate whether the performance of CIS banks has been impacted by economic sanctions imposed on Russia since the start of the conflict. Understanding GPR transmission mechanisms and consequences on Russia’s neighbouring countries allows policymakers and financial institutions to formulate and implement risk management strategies. For a global measure of geo-political risk, we employ the global GPR index from Caldara and Iacoviello (2022) and we use the Diebold-Yilmaz (2012) connectedness model to estimate the spill over effect. First, we investigate the spill over effect of the recent conflict on the returns of banks for a sample of CIS countries. Further, we examine the spill over effect on macro-economic indicators of our sample of countries. Our preliminary results do not show significant GPR transmissions in terms of returns and risk within the banking sectors of the CIS countries examined

FEATURES OF THE STATE OF THE ORAL MUCOSA IN PATIENTS WITH DIABETES MELLITUS (LITERATURE REVIEW)

Experts of the world diabetes Federation (IDF) predict that the number of patients with diabetes will increase by 1.5 times to 552 million people by 2030, and the share of the population with metabolic syndrome will increase to 800 million people. It is from this group that the number of patients with diabetes mellitus is increased by 15% annually [1]

Features of the State of the Oral Mucosa in Patients with Diabetes Mellitus (Literature Review)

Experts of the world diabetes Federation (IDF) predict that the number of patients with diabetes will increase by 1.5 times to 552 million people by 2030, and the share of the population with metabolic syndrome will increase to 800 million people. It is from this group that the number of patients with diabetes mellitus is increased by 15% annually [1]

Abnormal photovoltaic effect in structure with a barrier Shottky-Mott's

The results of investigation of the photovoltaic effect observed at room temperature are presented. The effect is accompanied by a change in the photocurrent sign in the transition from the intrinsic absorption region to the impurity absorption region in the spectrum range from 0,4 to 2 m in oxygen-doped double-base Ag-N0AlGaAs-n+GaAs-n0GaInAs-Au-structure. Such structures are of interest for fiber-optical systems

Some photo-electric features of the characteristics two-base Ag–N0Al0,2Ga0,8As–n+GaAs–n0Ga0,9In0,1As–Au-structure

The photo-electric characteristics created two-side-sensitive two-base Ag–N0Al0,2Ga0,8As–n+GaAs–n0Ga0,9In0,1As–Au-structure in photodiode and photovoltaic modes are investigated at influence by radiation from own area of absorption of base areas. The received structures are of interest as silent photoreceivers for opto- and microelectronics

Multifunctional homojunction gallium arsenide n–p–m-structure

The brief information about created phototransistor nGaAs–рGaAs–Ag-structure are given. The processes of photogeneration of carriers in the base and in the space-charge layers of semiconductor junction as well as of metal — semiconductor junction are analyzed depending on the mode of inclusion. It is shown the multifunctionality of offered homojunction structure that is perspective for creating the optical receiver or the optical transformer

Modification of barrier structure on the basis of pAlGaInAs–nGaAs by consecutively connected potential barriers

There have been researched how the consistently connected potential barriers influence on physical processes running in p–n-heterojunction on an example of one- and multibarrier structures. It is shown, that updating of the heterojunction by creation of the consistently connected barrier to a substrate and to heterolayer result in convertion of a passive parasitic part of a substrate to the active category and its modulation from the two-parties. The third barrier generated to heterolayer excludes the injection of carriers to the base area and essentially reduces capacity of structure

Study on the formation of current characteristics of a silicon photodiode with rectifying barriers

The article presents the results of studies on silicon photodiode double-barrier structure with back-to-back rectifying junctions «metal — semiconductor» in the photodiode and photovoltaic modes. Such structures are of interest for the development of input devices for weak optical signals