Modification of barrier structure on the basis of pAlGaInAs–nGaAs by consecutively connected potential barriers

Abstract

There have been researched how the consistently connected potential barriers influence on physical processes running in p–n-heterojunction on an example of one- and multibarrier structures. It is shown, that updating of the heterojunction by creation of the consistently connected barrier to a substrate and to heterolayer result in convertion of a passive parasitic part of a substrate to the active category and its modulation from the two-parties. The third barrier generated to heterolayer excludes the injection of carriers to the base area and essentially reduces capacity of structure