Conduction mechanisms of epitaxial EuTiO3 thin films

To investigate leakage current density versus electric field characteristics, epitaxial EuTiO3 thin films were deposited on (001) SrTiO3 substrates by pulsed laser deposition and were post-annealed in a reducing atmosphere. This investigation found that conduction mechanisms are strongly related to temperature and voltage polarity. It was determined that from 50 to 150 K the dominant conduction mechanism was a space-charge-limited current under both negative and positive biases. From 200 to 300 K, the conduction mechanism shows Schottky emission and Fowler-Nordheim tunneling behaviors for the negative and positive biases, respectively. This work demonstrates that Eu3+ is one source of leakage current in EuTiO3 thin films.Comment: 17 pages,4 figures, conferenc

The structural, mechanical, electronic, optical and thermodynamic properties of t-X3_{3}As4_{4} (X == Si, Ge and Sn) by first-principles calculations

The structural, mechanical, electronic, optical and thermodynamic properties of the t-X$_{\mathrm{3}}$As$_{\mathrm{4}}$ (X $=$ Si, Ge and Sn) with tetragonal structure have been investigated by first principles calculations. Our calculated results show that these compounds are mechanically and dynamically stable. By the study of elastic anisotropy, it is found that the anisotropic of the t-Sn$_{\mathrm{3}}$As$_{\mathrm{4}}$ is stronger than that of t-Si$_{\mathrm{3}}$As$_{\mathrm{4}}$ and t-Ge$_{\mathrm{3}}$As$_{\mathrm{4}}$. The band structures and density of states show that the t-X$_{\mathrm{3}}$As$_{\mathrm{4}}$ (Si, Ge and Sn) are semiconductors with narrow band gaps. Based on the analyses of electron density difference, in t-X$_{\mathrm{3}}$As$_{\mathrm{4}}$ As atoms get electrons, X atoms lose electrons. The calculated static dielectric constants, $\varepsilon_{1} (0)$, are 15.5, 20.0 and 15.1 eV for t-X$_{\mathrm{3}}$As$_{\mathrm{4}}$ (X $=$ Si, Ge and Sn), respectively. The Dulong-Petit limit of t-X$_{\mathrm{3}}$As$_{\mathrm{4}}$ is about 10 J mol$^{\mathrm{-1}}$K$^{\mathrm{-1}}$. The thermodynamic stability successively decreases from t-Si$_{\mathrm{3}}$As$_{\mathrm{4}}$ to t-Ge$_{\mathrm{3}}$As$_{\mathrm{4}}$ to t-Sn$_{\mathrm{3}}$As$_{\mathrm{4}}$.Comment: 14 pages, 10 figures, 6 table

Broadband RCS Reduction of Microstrip Patch Antenna Using Bandstop Frequency Selective Surface

In this article, a simple and effective approach is presented to reduce the Radar Cross Section (RCS) of microstrip patch antenna in ultra broad frequency band. This approach substitutes a metallic ground plane of a conventional patch antenna with a hybrid ground consisting of bandstop Frequency Selective Surface (FSS) cells with partial metallic plane. To demonstrate the validity of the proposed approach, the influence of different ground planes on antenna’s performance is investigated. Thus, a patch antenna with miniaturized FSS cells is proposed. The results suggest that this antenna shows 3dB RCS reduction almost in the whole out-of operating band within 1-20GHz for wide incident angles when compared to conventional antenna, while its radiation characteristics are sustained simultaneously. The reasonable agreement between the measured and the simulated results verifies the efficiency of the proposed approach. Moreover, this approach doesn’t alter the lightweight, low-profile, easy conformal and easy manufacturing nature of the original antenna and can be extended to obtain low-RCS antennas with metallic planes in broadband that are quite suitable for the applications which are sensitive to the variation of frequencies