Analysis of Extended Algebraic Immunity of Boolean Functions

AbstractAlgebraic immunity (AI) is a new cryptographic criterion proposed against algebraic attacks. Extended algebraic immunity (EAI) extends the concept of algebraic immunity, whose point is that a Boolean function f may be replaced by another Boolean function fc called the algebraic complement of f In this paper, we investigate EAI of Boolean functions. Firstly, we present a sufficient and necessary condition to judge AI of a Boolean function equals to its EAI. Secondly, we prove that two classes of Boolean functions with maximum AI also have optimal EAI. Finally, we analyze that the structure of the annihilators of Boolean functions with the algebraic complement

Hydrogen Sulfide Regulates Energy Production to Delay Leaf Senescence Induced by Drought Stress in Arabidopsis

Hydrogen sulfide (H2S) is a novel gasotransmitter in both mammals and plants. H2S plays important roles in various plant developmental processes and stress responses. Leaf senescence is the last developmental stage and is a sequential degradation process that eventually leads to leaf death. A mutation of the H2S-producing enzyme-encoding gene L-cysteine desulfhydrase1 (DES1) leads to premature leaf senescence but the underlying mechanisms are not clear. In this present study, wild-type, DES1 defective mutant (des1) and over-expression (OE-DES1) Arabidopsis plants were used to investigate the underlying mechanism of H2S signaling in energy production and leaf senescence under drought stress. The des1 mutant was more sensitive to drought stress and displayed accelerated leaf senescence, while the leaves of OE-DES1 contained adequate chlorophyll levels, accompanied by significantly increased drought resistance. Under drought stress, the expression levels of ATPβ-1, -2, and -3 were significantly downregulated in des1 and significantly upregulated in OE-DES1, and ATPε showed the opposite trend. Senescence-associated gene (SAG) 12 correlated with age-dependent senescence and participated in the drought resistance of OE-DES1. SAG13, which was induced by environmental factors, responded positively to drought stress in des1 plants, while there was no significant difference in the SAG29 expression between des1 and OE-DES1. Using transmission electron microscopy, the mitochondria of des1 were severely damaged and bubbled in older leaves, while OE-DES1 had complete mitochondrial structures and a homogeneous matrix. Additionally, mitochondria isolated from OE-DES1 increased the H2S production rate, H2S content and ATPase activity level, as well as reduced swelling and lowered the ATP content in contrast with wild-type and des1 significantly. Therefore, at subcellular levels, H2S appeared to determine the ability of mitochondria to regulate energy production and protect against cellular aging, which subsequently delayed leaf senescence under drought-stress conditions in plants

ℋ∞ leader-following consensus of multi-agent systems with channel fading under switching topologies: a semi-Markov kernel approach

This paper focuses on the leader-following consensus problem of discrete-time multi-agent systems subject to channel fading under switching topologies. First, a topology switching-based channel fading model is established to describe the information fading of the communication channel among agents, which also considers the channel fading from leader to follower and from follower to follower. It is more general than models in the existing literature that only consider follower-to-follower fading. For discrete multi-agent systems, the existing literature usually adopts time series or Markov process to characterize topology switching while ignoring the more general semi-Markov process. Based on the advantages and properties of semi-Markov processes, discrete semi-Markov jump processes are adopted to model network topology switching. Then, the semi-Markov kernel approach for handling discrete semi-Markov jumping systems is exploited and some novel sufficient conditions to ensure the leader-following mean square consensus of closed-loop systems are derived. Furthermore, the distributed consensus protocol is proposed by means of the stochastic Lyapunov stability theory so that the underlying systems can achieve ℋ∞ consensus performance index. In addition, the proposed method is extended to the scenario where the semi-Markov kernel of semi-Markov switching topologies is not completely accessible. Finally, a simulation example is given to verify the results proposed in this paper. Compared with the existing literature, the method in this paper is more effective and general

Alkylated indacenodithieno[3,2-b]thiophene-based all donor ladder-type conjugated polymers for organic thin film transistors

We report the synthesis of a series of indacenodithieno[3,2-b]thiophene (IDTT) based conjugated polymers by copolymerization with three different electron rich co-monomers [thiophene (T), thieno[3,2-b]thiophene (TT) and dithieno[3,2-b:2,3-d]thiophene (DTT)] under Stille coupling conditions. The resulting all donor polymeys show very good solubility in common solvents and exhibit similar optical, thermal and electronic properties. However, the performance of these semiconductors in thin film transistor devices varied and was highly dependent on the nature of the co-mnomer. All polymers exhibited unipolar p-type charge transport behaviour, with the mobility values following the trend of IDTT-TT>IDTT-DTT>IDTT-T. The peak saturation mobility value of IDTT-TT was extracted to be 1.1 cm2V-1s-1, amongst the highest mobilty for all-donor conjugated poymers reported to data<br

Alkylated indacenodithieno[3,2-b]thiophene based non-fullerene acceptor with high crystallinity, low voltage loss and single junction solar cell efficiency greater than 13% with Low Voltage Losses

We report a new synthetic route to prepare an alkylated indacenodithieno[3,2-b]thiophene (IDTT) based non-fullerene acceptor (C8-ITIC). Compared to the reported ITIC with phenylalkyl side chains, the new acceptor C8-ITIC exhibited a red-shifted absorption with increased absorptivity. Accordingly, blends with the donor polymer PBDB-T exhibited an efficiency up 12.4%. Further improvements in efficiency were found upon backbone fluorination of the donor polymer. The resulting blend showed an impressive PCE up to 13.2%, which is related to broad absorption, higher crystallinity of C8-ITIC and low voltage loss in blend

Anion-Induced N-doping of Naphthalenediimide Polymer Semiconductor in Organic Thin Film Transistors

Molecular doping is an important strategy to improve the charge transport properties of organic semiconductors in various electronic devices. Compared to p-type dopants, the development of n-type dopants is especially challenging due to poor dopand stability against atmospheric conditions. In this article, we reprot the n-doping of the milestone naththalenediimide-based conjugated polymers P(NDI2OD-T2) in organic thin film transistor devices by introducing soluble anion dopants which resulted in the formation of stable radical anions in thin films, as confirmed by EPR spectroscopy. By tuning the dopant concentration via simple solution mixing, the transistor parameters could be readily controlled. <br