Pressure and temperature driven phase transitions in HgTe quantum wells

We present theoretical investigations of pressure and temperature driven phase transitions in HgTe quantum wells grown on CdTe buffer. Using the 8-band \textbf{k$\cdot$p} Hamiltonian we calculate evolution of energy band structure at different quantum well width with hydrostatic pressure up to 20 kBar and temperature ranging up 300 K. In particular, we show that in addition to temperature, tuning of hydrostatic pressure allows to drive transitions between semimetal, band insulator and topological insulator phases. Our realistic band structure calculations reveal that the band inversion under hydrostatic pressure and temperature may be accompanied by non-local overlapping between conduction and valence bands. The pressure and temperature phase diagrams are presented.Comment: 9 pages, 8 figures + Supplemental material (5 pages

Temperature Dependent Zero-Field Splittings in Graphene

Graphene is a quantum spin Hall insulator with a 45 $\mu$eV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting is weak, it makes graphene an attractive candidate for applications in quantum technologies, given the resulting long spin relaxation time. On the other side, the staggered sub-lattice potential, resulting from the coupling of graphene with its boron nitride substrate, compensates intrinsic spin-orbit coupling and decreases the non-trivial topological gap, which may lead to the phase transition into trivial band insulator state. In this work, we present extensive experimental studies of the zero-field splittings in monolayer and bilayer graphene in a temperature range 2K-12K by means of sub-Terahertz photoconductivity-based electron spin resonance technique. Surprisingly, we observe a decrease of the spin splittings with increasing temperature. We discuss the origin of this phenomenon by considering possible physical mechanisms likely to induce a temperature dependence of the spin-orbit coupling. These include the difference in the expansion coefficients between the graphene and the boron nitride substrate or the metal contacts, the electron-phonon interactions, and the presence of a magnetic order at low temperature. Our experimental observation expands knowledge about the non-trivial topological gap in graphene.Comment: Main text with figures (20 pages) and Supplementary Information (14 pages) Accepted in Phys. Rev.

Symmetry breaking and circular photogalvanic effect in epitaxial CdxHg1-xTe films

We report on the observation of symmetry breaking and the circular photogalvanic effect in CdxHg1-xTe alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende crystals by symmetry arguments; therefore, its observation indicates either the symmetry reduction of bulk material or that the photocurrent is excited in the topological surface states formed in a material with low cadmium concentration. We show that the bulk states play a crucial role because the CPGE was also clearly detected in samples with noninverted band structure. We suggest that strain is a reason for the symmetry reduction. We develop a theory of the CPGE showing that the photocurrent results from the quantum interference of different pathways contributing to the free-carrier absorption (Drude-like) of monochromatic radiation

Observation of Terahertz-Induced Magnetooscillations in Graphene

When high-frequency radiation is incident upon graphene subjected to a perpendicular magnetic field, graphene absorbs incident photons by allowing transitions between nearest Landau levels that follow strict selection rules dictated by angular momentum conservation. Here, we show a qualitative deviation from this behavior in high-quality graphene devices exposed to terahertz (THz) radiation. We demonstrate the emergence of a pronounced THz-driven photoresponse, which exhibits low-field magnetooscillations governed by the ratio of the frequency of the incoming radiation and the quasiclassical cyclotron frequency. We analyze the modifications of generated photovoltage with the radiation frequency and carrier density and demonstrate that the observed photoresponse shares a common origin with microwave-induced resistance oscillations discovered in GaAs-based heterostructures; however, in graphene it appears at much higher frequencies and persists above liquid nitrogen temperatures. Our observations expand the family of radiation-driven phenomena in graphene, paving the way for future studies of nonequilibrium electron transport

Imaging and Gas Spectroscopy for Health Protection in Sub-THz Frequency Range

International audienceAn overview of main results concerning THz detection related to plasma nonlinearities in nanometer field effect transistors is presented. In particular the physical limits of the responsivity, speed and the dynamic range of these detectors are discussed. As a conclusion, we will present applications of the FET THz detectors for construction of focal plane arrays. These arrays, together with in purpose developed diffractive 3D printed optics lead to construction of the demonstrators of the fast postal security imagers and nondestructive industrial quality control systems. We will show also first results of FET based imaging that uses for contrast not only usual THz radiation amplitude, but also the degree of its circular polarization. Sub-THz high resolution gas spectroscopy is shown to be a powerful means to diagnose various diseases via exhaled breath analysis

Additional file 6: Figure S2. of Cross-disorder comparative analysis of comorbid conditions reveals novel autism candidate genes

First two Multidimensional Scaling (MDS) dimensions of our dataset generated by MDS on a dissimilarity matrix using Jaccard Coefficient when k = 6. Each group is highlighted in a different color and the disorders conforming them are detailed in Additional file 5: Table S4, along with their corresponding mean Jaccard Coefficient value. The autism sibling comorbid disorders are clustered together in group 2 (PDF 180 kb