866 research outputs found

    Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy

    Get PDF
    The plasma-assisted molecular-beam epitaxy technique was used to study the epitaxial growth of InN on GaN. A relationship between film growth mode and the deposition condition was established by combining reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The sustained RHEED intensity oscillations were recorded for 2D growth while 2D nucleation islands were revealed by STM. Results showed less than three oscillation periods for 3 D growth, indicating the Strnski-Krastanov (SK) growth mode of the film.published_or_final_versio

    InN Island shape and its dependence on growth condition of molecular-beam epitaxy

    Get PDF
    The three-dimensional (3D) island shapes of the InN and its dependence on growth conditions of molecular-beam epitaxy (MBE) were analyzed. The islands were dislocated and the strain in an island depended on its size. The pillar-shaped islands with low aspect ratios represented the equilibrium shape, and the pyrimidal islands with higher aspect ratios were limited by kinetics during MBE growth. The decreasing trend of island aspect ratio with respect to island size was attributed to gradual relaxation of residual strain in dislocated islands.published_or_final_versio

    Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy

    Get PDF
    The scaling property of three-dimensional InN islands nucleated on GaN(0001) surface during molecular-beam epitaxy (MBE) is investigated. Due to the large lattice mismatch between InN and GaN (∼10%), the islands formed from the Stranski-Krastanow growth mode are dislocated. Despite the variations in (residual) strain and the shape, both the island size and pair separation distributions show the scaling behavior. Further, the size distribution resembles that for submonolayer homoepitaxy with the critical island size i = 1, suggesting that detachment of atoms is not significant. The above results also indicate strain is insignificant in determining the nucleation and growth of dislocated islands during heteroepitaxy by MBE.published_or_final_versio

    Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy

    Get PDF
    Step bunching of vicinal GaN(0001) surface during epitaxial growth is observed by scanning tunneling microscopy. Large step stiffness and repulsive step-step interaction are suggested based on step morphology observations. The size of the bunch changes with time, depending on the direction in which the substrate is heated by a direct current. This observation provides evidence for the electromigration effect causing the step bunching, and from the field dependence we infer that adatoms, which are likely N, have effective positive charges. ©2000 The American Physical Society.published_or_final_versio

    Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy

    Get PDF
    We observe a significant reduction of threading dislocations in GaN grown on vicinal substrates of SiC(0001). Using scanning tunneling microscopy, we find films grown on vicinal substrates maintain the surface misorientation of the substrate and display terraces with straight edges. On top of the terraces there is no spiral mound, which is the main feature found for films grown on singular substrates. Transmission electron microscopy studies confirm that threading screw dislocations are reduced by two orders of magnitude while edge dislocations are reduced by one order. © 2000 American Institute of Physics.published_or_final_versio

    In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy

    Get PDF
    Indium nitride (InN) exists in two different structural phases, the equilibrium wurtzite (w) and the metastable zinc-blende (zb) phases. It is of scientific interest and practical relevance to examine the crystal structure of the epifilms during growth. In this paper, we use Patterson function inversion of low-energy electron diffraction I-V curves to reveal the preferential formation of zinc-blende InN wetting layer during the Stranski-Krastanov growth on GaN(0001). For three-dimensional islands nucleated afterwards on top of the wetting layer and for thick InN films, the equilibrium wurtzite structure is observed instead. This in situ revelation of the InN lattice structure is confirmed by ex situ transmission electron microscopy studies. Finally, the formation of zb-InN layer on w-GaN is explained in terms of the strain in the system. © 2005 The American Physical Society.published_or_final_versio

    Anaesthetic efficacy of articaine versus lidocaine in children's dentistry: a systematic review and meta‐analysis

    Get PDF
    Background: Over the last few years, numerous reviews and studies have awarded articaine hydrochloride local anaesthetic (LA) a superior reputation, with outcomes of different studies demonstrating a general tendency for articaine hydrochloride to outperform lidocaine hydrochloride for dental treatment. Nevertheless, there seems to be no clear agreement on which LA solution is more efficacious in dental treatment for children. There is no previous publication systematically reviewing and summarising the current best evidence with respect to the success rates of LA solutions in children. Aims: To evaluate the available evidence on the efficacy of lidocaine and articaine, used in paediatric dentistry. Design: A systematic search was conducted on Cochrane CENTRAL Register of Controlled Trials, MEDLINE (OVID; 1950 to June 2017), Cumulative Index to Nursing and Allied Health Literature (CINAHL; EBSCOhost; 1982 to June 2017), EMBASE (OVID; 1980 to June 2017), SCI‐EXPANDED (ISI Web of Knowledge; 1900 to June 2017), key journals, and previous review bibliographies through June 2017. Original research studies that compared articaine with lidocaine for dental treatment in children were included. Methodological quality assessment and assessment of risk of bias were carried out for each of the included studies. Results: Electronic searching identified 525 publications. Following the primary and secondary assessment process, six randomised controlled trials (RCT) were included in the final analysis. There was no difference between patient self‐reported pain between articaine and lidocaine during treatment procedures (SMD = 0.06, P‐value = 0.614), and no difference in the occurrence of adverse events between articaine and lidocaine injections following treatment in paediatric patients (RR = 1.10, P‐value = 0.863). Yet, patients reported significantly less pain post‐procedure following articaine injections (SMD = 0.37, P‐value = 0.013). Substantial heterogeneity was noted in the reporting of outcomes among studies, with the overall quality of majority of studies being at high risk of bias. Conclusions: There is low quality evidence suggesting that both articaine as infiltration and lidocaine IAD nerve blocks presented the same efficacy when used for routine dental treatments, with no difference between patient self‐reported pain between articaine and lidocaine during treatment procedures. Yet, significantly less pain post‐procedure was reported following articaine injections. There was no difference in the occurrence of adverse events between articaine and lidocaine injections following treatment in paediatric patients

    Regulatory role of miR-142-3p on the functional hepatic cancer stem cell marker CD133

    Get PDF
    Tumor relapse after therapy typifies hepatocellular carcinoma (HCC) and is believed to be attributable to residual cancer stem cells (CSCs) that survive treatment. We have previously identified a CSC population derived from HCC that is characterized by CD133. Despite our growing knowledge of the importance of this subset of cells in driving HCC, the regulatory mechanism of CD133 is not known. Epigenetic changes are believed to be essential in the control of cancer and stem cells. Here, we report the epigenetic regulation of CD133 by miR-142-3p. The interaction between CD133 and miR-142-3p was identified by in silico prediction and substantiated by luciferase reporter analysis. Expression of CD133 was found to be inversely correlated with miR-142-3p in HCC clinical samples as well as in cell lines. Importantly, lower miR-142-3p expression in HCC was significantly associated with worst survival. Functional studies with miR-142-3p stably transduced in HCC cells demonstrated a diminished ability to self-renew, initiate tumor growth, invade, migrate, induce angiogenesis and resist chemotherapy. Rescue experiments whereby CD133 and miR-142-3p is simultaneously overexpressed compensated the deregulated ability of the cells to confer these features. Thus, miR-142-3p directly targets CD133 to regulate its ability to confer cancer and stem cell-like features in HCC.published_or_final_versio

    Surface morphology of GaN: Flat versus vicinal surfaces

    Get PDF
    The surface morphology of GaN films grown by molecular beam epitaxy (MBE) is investigated by scanning tunneling microscopy (STM). A comparison is made between flat and vicinal surfaces. The wurtzite structure of GaN leads to special morphological features such as step pairing and triangularly shaped islands. Spiral mounds due to growth at screw threading dislocations are dominant on flat surfaces, whereas for vicinal GaN, the surfaces show no spiral mound but evenly spaced steps. This observation suggests an effective suppression of screw threading dislocations in the vicinal films. This finding is confirmed by transmission electron microscopy (TEM) studies. Continued growth of the vicinal surface leads to step bunching that is attributed to the effect of electromigration.published_or_final_versionThe 1999 Materials Research Society Symposium Fall Meeting - Symposium W 'GaN and Related Alloys', Boston, MA, 28 November - 3 December 1999. In Mrs Internet Journal Of Nitride Semiconductor Research, 2000, v. 5 SUPPL.

    ANXA3/JNK Signaling Promotes Self-Renewal and Tumor Growth, and Its Blockade Provides a Therapeutic Target for Hepatocellular Carcinoma

    Get PDF
    Frequent tumor relapse in hepatocellular carcinoma (HCC) has been commonly attributed to the presence of residual cancer stem cells (CSCs) after conventional treatments. We have previously identified and characterized CD133 to mark a specific CSC subset in HCC. In the present study, we found endogenous and secretory annexin A3 (ANXA3) to play pivotal roles in promoting cancer and stem cell-like features in CD133+ liver CSCs through a dysregulated JNK pathway. Blockade of ANXA3 with an anti-ANXA3 monoclonal antibody in vitro as well as in human HCC xenograft models resulted in a significant reduction in tumor growth and self-renewal. Clinically, ANXA3 expression in HCC patient sera closely associated with aggressive clinical features. Our results suggest that ANXA3 can serve as a novel diagnostic biomarker and that the inhibition of ANXA3 may be a viable therapeutic option for the treatment of CD133+ liver-CSC-driven HCC. © 2015 The Authors.published_or_final_versio
    corecore