28,130 research outputs found

    Threshold Dynamics of a Semiconductor Single Atom Maser

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    We demonstrate a single-atom maser consisting of a semiconductor double quantum dot (DQD) that is embedded in a high quality factor microwave cavity. A finite bias drives the DQD out of equilibrium, resulting in sequential single electron tunneling and masing. We develop a dynamic tuning protocol that allows us to controllably increase the time-averaged repumping rate of the DQD at a fixed level detuning, and quantitatively study the transition through the masing threshold. We further examine the crossover from incoherent to coherent emission by measuring the photon statistics across the masing transition. The observed threshold behavior is in agreement with an existing single atom maser theory when small corrections from lead emission are taken into account

    Double Quantum Dot Floquet Gain Medium

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    Strongly driving a two-level quantum system with light leads to a ladder of Floquet states separated by the photon energy. Nanoscale quantum devices allow the interplay of confined electrons, phonons, and photons to be studied under strong driving conditions. Here we show that a single electron in a periodically driven DQD functions as a "Floquet gain medium," where population imbalances in the DQD Floquet quasi-energy levels lead to an intricate pattern of gain and loss features in the cavity response. We further measure a large intra-cavity photon number n_c in the absence of a cavity drive field, due to equilibration in the Floquet picture. Our device operates in the absence of a dc current -- one and the same electron is repeatedly driven to the excited state to generate population inversion. These results pave the way to future studies of non-classical light and thermalization of driven quantum systems

    Influence of Potamogeton crispus growth on nutrients in the sediment and water of Lake Tangxunhu

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    An incubation experiment was performed on Potamogeton crispus (P. crispus) using sediment collected from Lake Tangxunhu in the center of China, in order to determine the effects of plant growth on Fe, Si, Cu, Zn, Mn, Mg, P, and Ca concentrations in the sediments and overlying waters. After 3 months of incubation, Ca, Mg, and Si concentrations in the water column were significantly lower, and P and Cu concentrations were significantly higher than in unplanted controls. The effect of P. crispus growth on sediment pore waters and water-extractable elements varied. Concentrations of Ca, Mg, Si, Fe, Cu, and Zn were significantly higher, and P was significantly lower, than in pore waters of the control. Water-extracted concentrations of Fe, Mg, and Si in the sediments were lower, and P was higher, than in the control. Presence of P. crispus generally enhanced concentration gradients of elements between pore waters and overlying waters but not for P. The growth of P. crispus was associated with an increase in water pH and formation of root plaques, resulting in complex effects on the sediment nutritional status

    Valosin-containing protein regulates the proteasome-mediated degradation of DNA-PKcs in glioma cells.

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    DNA-dependent protein kinase (DNA-PK) has an important role in the repair of DNA damage and regulates the radiation sensitivity of glioblastoma cells. The VCP (valosine-containing protein), a chaperone protein that regulates ubiquitin-dependent protein degradation, is phosphorylated by DNA-PK and recruited to DNA double-strand break sites to regulate DNA damage repair. However, it is not clear whether VCP is involved in DNA-PKcs (DNA-PK catalytic subunit) degradation or whether it regulates the radiosensitivity of glioblastoma. Our data demonstrated that DNA-PKcs was ubiquitinated and bound to VCP. VCP knockdown resulted in the accumulation of the DNA-PKcs protein in glioblastoma cells, and the proteasome inhibitor MG132 synergised this increase. As expected, this increase promoted the efficiency of DNA repair in several glioblastoma cell lines; in turn, this enhanced activity decreased the radiation sensitivity and prolonged the survival fraction of glioblastoma cells in vitro. Moreover, the VCP knockdown in glioblastoma cells reduced the survival time of the xenografted mice with radiation treatment relative to the control xenografted glioblastoma mice. In addition, the VCP protein was also downregulated in ~25% of GBM tissues from patients (WHO, grade IV astrocytoma), and the VCP protein level was correlated with patient survival (R(2)=0.5222, P<0.05). These findings demonstrated that VCP regulates DNA-PKcs degradation and increases the sensitivity of GBM cells to radiation

    Characterization of the residual stresses in spray-formed steels using neutron diffraction

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    Neutron diffraction was used to characterize the residual stresses in an as-sprayed tube-shaped steel preform. The measured residual stress distributions were compared with those simulated using finite element method by taking into account the effects of the thermal history, porosity and different phases of the sprayed preform. The porosity was measured using X-ray microcomputed tomography. The study revealed for the first time the correlation between the distribution of porosity and residual stress developed in the as-sprayed preform

    Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)

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    We present energy filtered electron emission spectromicroscopy with spatial and wave-vector resolution on few layer epitaxial graphene on SiC$(000-1) grown by furnace annealing. Low energy electron microscopy shows that more than 80% of the sample is covered by 2-3 graphene layers. C1s spectromicroscopy provides an independent measurement of the graphene thickness distribution map. The work function, measured by photoelectron emission microscopy (PEEM), varies across the surface from 4.34 to 4.50eV according to both the graphene thickness and the graphene-SiC interface chemical state. At least two SiC surface chemical states (i.e., two different SiC surface structures) are present at the graphene/SiC interface. Charge transfer occurs at each graphene/SiC interface. K-space PEEM gives 3D maps of the k_|| pi - pi* band dispersion in micron scale regions show that the Dirac point shifts as a function of graphene thickness. Novel Bragg diffraction of the Dirac cones via the superlattice formed by the commensurately rotated graphene sheets is observed. The experiments underline the importance of lateral and spectroscopic resolution on the scale of future electronic devices in order to precisely characterize the transport properties and band alignments

    Spatial imaging of the spin Hall effect and current-induced polarization in two-dimensional electron gases

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    Spin-orbit coupling in semiconductors relates the spin of an electron to its momentum and provides a pathway for electrically initializing and manipulating electron spins for applications in spintronics and spin-based quantum information processing. This coupling can be regulated with quantum confinement in semiconductor heterostructures through band structure engineering. Here we investigate the spin Hall effect and current-induced spin polarization in a two-dimensional electron gas confined in (110) AlGaAs quantum wells using Kerr rotation microscopy. In contrast to previous measurements, the spin Hall profile exhibits complex structure, and the current-induced spin polarization is out-of-plane. The experiments map the strong dependence of the current-induced spin polarization to the crystal axis along which the electric field is applied, reflecting the anisotropy of the spin-orbit interaction. These results reveal opportunities for tuning a spin source using quantum confinement and device engineering in non-magnetic materials.Comment: Accepted for publication (2005
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