803 research outputs found

    Fenton and solar photo-Fenton processes for the removal of chlorpyrifos insecticide in wastewater

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    The degradation of chlorpyrifos in water by Fenton (H2O2/Fe2+) and solar photo-Fenton (H2O2/Fe2+/solar light) processes was investigated. A laboratory-scale reactor was designed to evaluate and select the optimal oxidation condition. The degradation rate is strongly dependent on pH, temperature, H2O2 dosing rate, and initial concentrations of the insecticide and Fe2+. The kinetics of organic matter decay was evaluated by means of chemical oxygen demand (COD) measurement. Overall kinetics can be described by a pseudo-second-order rate equation with respect to COD. The optimum conditions were obtained at pH 3, H2O2 dosing rate 120 mg·min–1, [Fe2+]0 5.0 mM, initial COD 1 330 mg·l–1 and 35°C for the Fenton process. However, in the solar photo-Fenton process, the degradation rate increased significantly. To achieve 90% of COD removal, the solar photo-Fenton process needs 50% less time than that used in the Fenton process which translates to a 50% gain of H2O2

    Electrocatalytic performance of PbO2 films in the degradation of dimethoate insecticide

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    This study was performed to find the best experimental conditions for the electrochemical removal of the insecticide dimethoate (C5H12NO3PS2) from aqueous solutions using a lead dioxide niobium anode. The process was studied under galvanostatic polarisation mode. The influence of applied current density (10–50 mA·cm–2), initial chemical oxygen demand COD0 (100–550 mg·ℓ–1), temperature (30–70°C) and pH (3–11) on COD and instantaneous current efficiency (ICE) was studied. The results showed that almost 90% of COD removal was achieved under optimal experimental conditions, indicating that electrochemical oxidation on a PbO2 anode is a suitable method for treatment of water polluted with dimethoate. It was found that the decay of COD generally followed a pseudo first-order kinetic and the oxidation rate was favoured by increasing the applied current density, temperature, pH and initial COD. The greatest COD removal (90%) was obtained when using an applied current density of 50 mA·cm–2, COD0 = 320 mg·ℓ–1, pH = 11, T = 70°C and electrolysis time = 8 h.Keywords: Electrochemical degradation; hydroxyl radicals; organic pollutants; lead dioxide; wastewate

    Sr0.9_{0.9}K0.1_{0.1}Zn1.8_{1.8}Mn0.2_{0.2}As2_{2}: a ferromagnetic semiconductor with colossal magnetoresistance

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    A bulk diluted magnetic semiconductor (Sr,K)(Zn,Mn)2_{2}As2_{2} was synthesized with decoupled charge and spin doping. It has a hexagonal CaAl2_{2}Si2_{2}-type structure with the (Zn,Mn)2_{2}As2_{2} layer forming a honeycomb-like network. Magnetization measurements show that the sample undergoes a ferromagnetic transition with a Curie temperature of 12 K and \revision{magnetic moment reaches about 1.5 μB\mu_{B}/Mn under μ0H\mu_0H = 5 T and TT = 2 K}. Surprisingly, a colossal negative magnetoresistance, defined as [ρ(H)ρ(0)]/ρ(0)[\rho(H)-\rho(0)]/\rho(0), up to -38\% under a low field of μ0H\mu_0H = 0.1 T and to -99.8\% under μ0H\mu_0H = 5 T, was observed at TT = 2 K. The colossal magnetoresistance can be explained based on the Anderson localization theory.Comment: Accepted for publication in EP

    Characterization of an embedded RF-MEMS switch

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    An RF-MEMS capacitive switch for mm-wave integrated circuits, embedded in the BEOL of 0.25μm BiCMOS process, has been characterized. First, a mechanical model based on Finite-Element-Method (FEM) was developed by taking the residual stress of the thin film membrane into account. The pull-in voltage and the capacitance values obtained with the mechanical model agree very well with the measured values. Moreover, S-parameters were extracted using Electromagnetic (EM) solver. The data observed in this way also agree well with the experimental ones measured up to 110GHz. The developed RF model was applied to a transmit/receive (T/R) antenna switch design. The results proved the feasibility of using the FEM model in circuit simulations for the development of RF-MEMS switch embedded, single-chip multi-band RF ICs
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