1,099 research outputs found
Analysis of Kif5b Expression during Mouse Kidney Development
published_or_final_versio
Aharonov-Bohm interference in topological insulator nanoribbons
Topological insulators represent novel phases of quantum matter with an
insulating bulk gap and gapless edges or surface states. The two-dimensional
topological insulator phase was predicted in HgTe quantum wells and confirmed
by transport measurements. Recently, Bi2Se3 and related materials have been
proposed as three-dimensional topological insulators with a single Dirac cone
on the surface and verified by angle-resolved photoemission spectroscopy
experiments. Here, we show unambiguous transport evidence of topological
surface states through periodic quantum interference effects in layered
single-crystalline Bi2Se3 nanoribbons. Pronounced Aharonov-Bohm oscillations in
the magnetoresistance clearly demonstrate the coverage of two-dimensional
electrons on the entire surface, as expected from the topological nature of the
surface states. The dominance of the primary h/e oscillation and its
temperature dependence demonstrate the robustness of these electronic states.
Our results suggest that topological insulator nanoribbons afford novel
promising materials for future spintronic devices at room temperature.Comment: 5 pages, 4 figures, RevTex forma
Direct observation of local K variation and its correlation to electronic inhomogeneity in (Ba1-xKx)Fe2As2 Pnictide
Local fluctuations in the distribution of dopant atoms are a suspected cause
of nanoscale electronic disorder or phase separation observed within the
pnictide superconductors. Atom probe tomography results present the first
direct observations of dopant nano-clustering in a K-doped 122-phase pnictides.
First-principles calculations suggest the coexistence of static magnetism and
superconductivity on a lattice parameter length scale over a large range of
doping concentrations. Collectively, our results provide evidence for a mixed
scenario of phase coexistence and phase separation originating from variation
of dopant atom experiments distroibutions.Comment: 4 pages, 4 figures and 1 table, accepted by Physical Review Letter
201
Spatially oriented plasmonic ‘nanograter’ structures
One of the key motivations in producing 3D structures has always been the realization of metamaterials with effective constituent properties that can be tuned in all propagation directions at various frequencies. Here, we report the investigation of spatially oriented “Nanograter” structures with orientation-dependent responses over a wide spectrum by focused-ion-beam based patterning and folding of thin film nanostructures. Au nano units of different shapes, standing along specifically designated orientations, were fabricated. Experimental measurements and simulation results show that such structures offer an additional degree of freedom for adjusting optical properties with the angle of inclination, in additional to the size of the structures. The response frequency can be varied in a wide range (8 μm–14 μm) by the spatial orientation (0°–180°) of the structures, transforming the response from magnetic into electric coupling. This may open up prospects for the fabrication of 3D nanostructures as optical interconnects, focusing elements and logic elements, moving toward the realization of 3D optical circuits
Spectroscopic investigation of quantum confinement effects in ion implanted silicon-on-sapphire films
Crystalline Silicon-on-Sapphire (SOS) films were implanted with boron (B)
and phosphorous (P) ions. Different samples, prepared by varying the ion
dose in the range to 5 x and ion energy in the range
150-350 keV, were investigated by the Raman spectroscopy, photoluminescence
(PL) spectroscopy and glancing angle x-ray diffraction (GAXRD). The Raman
results from dose dependent B implanted samples show red-shifted and
asymmetrically broadened Raman line-shape for B dose greater than
ions cm. The asymmetry and red shift in the Raman line-shape is
explained in terms of quantum confinement of phonons in silicon nanostructures
formed as a result of ion implantation. PL spectra shows size dependent visible
luminescence at 1.9 eV at room temperature, which confirms the presence
of silicon nanostructures. Raman studies on P implanted samples were also
done as a function of ion energy. The Raman results show an amorphous top SOS
surface for sample implanted with 150 keV P ions of dose 5 x ions
cm. The nanostructures are formed when the P energy is increased to
350 keV by keeping the ion dose fixed. The GAXRD results show consistency with
the Raman results.Comment: 9 Pages, 6 Figures and 1 Table, \LaTex format To appear in
SILICON(SPRINGER
Search for K_S K_L in psi'' decays
K_S K_L from psi'' decays is searched for using the psi'' data collected by
BESII at BEPC, the upper limit of the branching fraction is determined to be
B(psi''--> K_S K_L) < 2.1\times 10^{-4} at 90% C. L. The measurement is
compared with the prediction of the S- and D-wave mixing model of the
charmonia, based on the measurements of the branching fractions of J/psi-->K_S
K_L and psi'-->K_S K_L.Comment: 5 pages, 1 figur
Silicon Mie Resonators for Highly Directional Light Emission from monolayer MoS2
Controlling light emission from quantum emitters has important applications
ranging from solid-state lighting and displays to nanoscale single-photon
sources. Optical antennas have emerged as promising tools to achieve such
control right at the location of the emitter, without the need for bulky,
external optics. Semiconductor nanoantennas are particularly practical for this
purpose because simple geometries, such as wires and spheres, support multiple,
degenerate optical resonances. Here, we start by modifying Mie scattering
theory developed for plane wave illumination to describe scattering of dipole
emission. We then use this theory and experiments to demonstrate several
pathways to achieve control over the directionality, polarization state, and
spectral emission that rely on a coherent coupling of an emitting dipole to
optical resonances of a Si nanowire. A forward-to-backward ratio of 20 was
demonstrated for the electric dipole emission at 680 nm from a monolayer MoS2
by optically coupling it to a Si nanowire
SProtP: A Web Server to Recognize Those Short-Lived Proteins Based on Sequence-Derived Features in Human Cells
Protein turnover metabolism plays important roles in cell cycle progression, signal transduction, and differentiation. Those proteins with short half-lives are involved in various regulatory processes. To better understand the regulation of cell process, it is important to study the key sequence-derived factors affecting short-lived protein degradation. Until now, most of protein half-lives are still unknown due to the difficulties of traditional experimental methods in measuring protein half-lives in human cells. To investigate the molecular determinants that affect short-lived proteins, a computational method was proposed in this work to recognize short-lived proteins based on sequence-derived features in human cells. In this study, we have systematically analyzed many features that perhaps correlated with short-lived protein degradation. It is found that a large fraction of proteins with signal peptides and transmembrane regions in human cells are of short half-lives. We have constructed an SVM-based classifier to recognize short-lived proteins, due to the fact that short-lived proteins play pivotal roles in the control of various cellular processes. By employing the SVM model on human dataset, we achieved 80.8% average sensitivity and 79.8% average specificity, respectively, on ten testing dataset (TE1-TE10). We also obtained 89.9%, 99% and 83.9% of average accuracy on an independent validation datasets iTE1, iTE2 and iTE3 respectively. The approach proposed in this paper provides a valuable alternative for recognizing the short-lived proteins in human cells, and is more accurate than the traditional N-end rule. Furthermore, the web server SProtP (http://reprod.njmu.edu.cn/sprotp) has been developed and is freely available for users
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