Hybrid GRU-CNN Bilinear Parameters Initialization for Quantum Approximate Optimization Algorithm

The Quantum Approximate Optimization Algorithm (QAOA), a pivotal paradigm in the realm of variational quantum algorithms (VQAs), offers promising computational advantages for tackling combinatorial optimization problems. Well-defined initial circuit parameters, responsible for preparing a parameterized quantum state encoding the solution, play a key role in optimizing QAOA. However, classical optimization techniques encounter challenges in discerning optimal parameters that align with the optimal solution. In this work, we propose a hybrid optimization approach that integrates Gated Recurrent Units (GRU), Convolutional Neural Networks (CNN), and a bilinear strategy as an innovative alternative to conventional optimizers for predicting optimal parameters of QAOA circuits. GRU serves to stochastically initialize favorable parameters for depth-1 circuits, while CNN predicts initial parameters for depth-2 circuits based on the optimized parameters of depth-1 circuits. To assess the efficacy of our approach, we conducted a comparative analysis with traditional initialization methods using QAOA on Erd\H{o}s-R\'enyi graph instances, revealing superior optimal approximation ratios. We employ the bilinear strategy to initialize QAOA circuit parameters at greater depths, with reference parameters obtained from GRU-CNN optimization. This approach allows us to forecast parameters for a depth-12 QAOA circuit, yielding a remarkable approximation ratio of 0.998 across 10 qubits, which surpasses that of the random initialization strategy and the PPN2 method at a depth of 10. The proposed hybrid GRU-CNN bilinear optimization method significantly improves the effectiveness and accuracy of parameters initialization, offering a promising iterative framework for QAOA that elevates its performance

Nanomechanical Resonators: Toward Atomic Scale

The quest for realizing and manipulating ever smaller man-made movable structures and dynamical machines has spurred tremendous endeavors, led to important discoveries, and inspired researchers to venture to new grounds. Scientific feats and technological milestones of miniaturization of mechanical structures have been widely accomplished by advances in machining and sculpturing ever shrinking features out of bulk materials such as silicon. With the flourishing multidisciplinary field of low-dimensional nanomaterials, including one-dimensional (1D) nanowires/nanotubes, and two-dimensional (2D) atomic layers such as graphene/phosphorene, growing interests and sustained efforts have been devoted to creating mechanical devices toward the ultimate limit of miniaturization— genuinely down to the molecular or even atomic scale. These ultrasmall movable structures, particularly nanomechanical resonators that exploit the vibratory motion in these 1D and 2D nano-to-atomic-scale structures, offer exceptional device-level attributes, such as ultralow mass, ultrawide frequency tuning range, broad dynamic range, and ultralow power consumption, thus holding strong promises for both fundamental studies and engineering applications. In this Review, we offer a comprehensive overview and summary of this vibrant field, present the state-of-the-art devices and evaluate their specifications and performance, outline important achievements, and postulate future directions for studying these miniscule yet intriguing molecular-scale machines

Nanomechanical Resonators: Toward Atomic Scale

The quest for realizing and manipulating ever smaller man-made movable structures and dynamical machines has spurred tremendous endeavors, led to important discoveries, and inspired researchers to venture to previously unexplored grounds. Scientific feats and technological milestones of miniaturization of mechanical structures have been widely accomplished by advances in machining and sculpturing ever shrinking features out of bulk materials such as silicon. With the flourishing multidisciplinary field of low-dimensional nanomaterials, including one-dimensional (1D) nanowires/nanotubes and two-dimensional (2D) atomic layers such as graphene/ phosphorene, growing interests and sustained effort have been devoted to creating mechanical devices toward the ultimate limit of miniaturization--genuinely down to the molecular or even atomic scale. These ultrasmall movable structures, particularly nanomechanical resonators that exploit the vibratory motion in these 1D and 2D nano-to-atomic-scale structures, offer exceptional device-level attributes, such as ultralow mass, ultrawide frequency tuning range, broad dynamic range, and ultralow power consumption, thus holding strong promises for both fundamental studies and engineering applications. In this Review, we offer a comprehensive overview and summary of this vibrant field, present the state-of-the-art devices and evaluate their specifications and performance, outline important achievements, and postulate future directions for studying these miniscule yet intriguing molecular-scale machines

The complete chloroplast genome of Prunus conradinae (Rosaceae), a wild flowering cherry from China

Prunus conradinae is a flowering cherry species with high ornamental value. In this study, the complete chloroplast (cp) genome of P. conradinae was obtained using a genome skimming approach. The cp genome was 158,019 bp long, with a large single-copy region of 85,910 bp and a small single-copy region of 19,247 bp separated by two inverted repeats of 26,431 bp. It encodes 130 genes, including 85 protein-coding genes, 37 tRNA genes, and eight ribosomal RNA genes. The phylogenetic analysis indicated that P. conradinae is closely related to the congeners P. maximowiczii, P. takesimensis, P. speciosa, P. serrulata var. spontanea, P. discoidea, and P. matuurai

Transformation of threshold volatile switching to quantum point contact originated nonvolatile switching in graphene interface controlled memory devices.

Resistive switching devices based on binary transition metal oxides have been widely investigated. However, these devices invariably manifest threshold switching characteristics when the active metal electrode is silver, the dielectric layer is hafnium oxide and platinum is used as the bottom electrode, and have a relatively low compliance current (<100 μA). Here we developed a way to transform an Ag-based hafnium oxide selector into quantum-contact originated memory with a low compliance current, in which a graphene interface barrier layer is inserted between the silver electrode and hafnium oxide layer. Devices with structure Ag/HfO x /Pt acts as a bipolar selector with a high selectivity of >108 and sub-threshold swing of ∼1 mV dec-1. After introducing a graphene interface barrier, high stress dependent (forming at +3 V) formation of localized conducting filaments embodies stable nonvolatile memory characteristics with low set/reset voltages (<±1.0 V), low reset power (6 μW) and multi-level potential. Grain boundaries of the graphene interface control the type of switching in the devices. A good barrier can switch the Ag-based volatile selector into Ag-based nonvolatile memory

Bipolar Analog Memristors as Artificial Synapses for Neuromorphic Computing

Synaptic devices with bipolar analog resistive switching behavior are the building blocks for memristor-based neuromorphic computing. In this work, a fully complementary metal-oxide semiconductor (CMOS)-compatible, forming-free, and non-filamentary memristive device (Pd/Al2O3/TaOx/Ta) with bipolar analog switching behavior is reported as an artificial synapse for neuromorphic computing. Synaptic functions, including long-term potentiation/depression, paired-pulse facilitation (PPF), and spike-timing-dependent plasticity (STDP), are implemented based on this device; the switching energy is around 50 pJ per spike. Furthermore, for applications in artificial neural networks (ANN), determined target conductance states with little deviation (<1%) can be obtained with random initial states. However, the device shows non-linear conductance change characteristics, and a nearly linear conductance change behavior is obtained by optimizing the training scheme. Based on these results, the device is a promising emulator for biology synapses, which could be of great benefit to memristor-based neuromorphic computing

An artificial spiking afferent nerve based on Mott memristors for neurorobotics.

Neuromorphic computing based on spikes offers great potential in highly efficient computing paradigms. Recently, several hardware implementations of spiking neural networks based on traditional complementary metal-oxide semiconductor technology or memristors have been developed. However, an interface (called an afferent nerve in biology) with the environment, which converts the analog signal from sensors into spikes in spiking neural networks, is yet to be demonstrated. Here we propose and experimentally demonstrate an artificial spiking afferent nerve based on highly reliable NbOx Mott memristors for the first time. The spiking frequency of the afferent nerve is proportional to the stimuli intensity before encountering noxiously high stimuli, and then starts to reduce the spiking frequency at an inflection point. Using this afferent nerve, we further build a power-free spiking mechanoreceptor system with a passive piezoelectric device as the tactile sensor. The experimental results indicate that our afferent nerve is promising for constructing self-aware neurorobotics in the future

An artificial spiking afferent nerve based on Mott memristors for neurorobotics.

Neuromorphic computing based on spikes offers great potential in highly efficient computing paradigms. Recently, several hardware implementations of spiking neural networks based on traditional complementary metal-oxide semiconductor technology or memristors have been developed. However, an interface (called an afferent nerve in biology) with the environment, which converts the analog signal from sensors into spikes in spiking neural networks, is yet to be demonstrated. Here we propose and experimentally demonstrate an artificial spiking afferent nerve based on highly reliable NbOx Mott memristors for the first time. The spiking frequency of the afferent nerve is proportional to the stimuli intensity before encountering noxiously high stimuli, and then starts to reduce the spiking frequency at an inflection point. Using this afferent nerve, we further build a power-free spiking mechanoreceptor system with a passive piezoelectric device as the tactile sensor. The experimental results indicate that our afferent nerve is promising for constructing self-aware neurorobotics in the future