Power Balance AODV Algorithm of WSN in Agriculture Monitoring

 WSN (wireless sensor networks) is a kind of energy-constrained network, which has been widely used in precision agriculture environment monitoring. However, power balance is not taken into account in traditional routing algorithms. In this paper, a novel Power Balance Ad hoc On-Demand Distance Vector (PB-AODV) routing algorithm is proposed on cross-layer design to solve the problem of power balance. The main idea of our proposed algorithm is that, routing path is established by the received signal strength indication (RSSI) value in the route discovery process of PB-AODV. The optimal transmitting power which can be computed by RSSI value, power threshold and node’s surplus energy is encapsulated into route reply packet (RRP). Thus, the sender node can adaptively adjust its transmission power to save energy with the RRP. Simulation results show that the proposed algorithm is effective for load balancing, and increases the WSN’s lifetime about 14.3%

Anatomy of High-Performance GEMM with Online Fault Tolerance on GPUs

General Matrix Multiplication (GEMM) is a crucial algorithm for various applications such as machine learning and scientific computing, and an efficient GEMM implementation is essential for the performance of these systems. While researchers often strive for faster performance by using large compute platforms, the increased scale of these systems can raise concerns about hardware and software reliability. In this paper, we present a design for a high-performance GEMM with algorithm-based fault tolerance for use on GPUs. We describe fault-tolerant designs for GEMM at the thread, warp, and threadblock levels, and also provide a baseline GEMM implementation that is competitive with or faster than the state-of-the-art, proprietary cuBLAS GEMM. We present a kernel fusion strategy to overlap and mitigate the memory latency due to fault tolerance with the original GEMM computation. To support a wide range of input matrix shapes and reduce development costs, we present a template-based approach for automatic code generation for both fault-tolerant and non-fault-tolerant GEMM implementations. We evaluate our work on NVIDIA Tesla T4 and A100 server GPUs. Experimental results demonstrate that our baseline GEMM presents comparable or superior performance compared to the closed-source cuBLAS. The fault-tolerant GEMM incurs only a minimal overhead (8.89\% on average) compared to cuBLAS even with hundreds of errors injected per minute. For irregularly shaped inputs, the code generator-generated kernels show remarkable speedups of $160\% \sim 183.5\%$ and $148.55\% \sim 165.12\%$ for fault-tolerant and non-fault-tolerant GEMMs, outperforming cuBLAS by up to $41.40\%$.Comment: 11 pages, 2023 International Conference on Supercomputin

Enhanced thermal stability and electrical behavior of Zn-doped Sb2Te films for phase change memory application

Zn-doped Sb₂Te films are proposed to present the feasibility for phase-change memory application. Zn atoms are found to significantly increase crystallization temperature of Zn x (Sb₂Te)1−x films and be almost linearly with the wide range of Zn-doping concentration from x = 0 to 29.67 at.%. Crystalline resistances are enhanced by Zn-doping, while keeping the large amorphous/crystalline resistance ratio almost constant at ∼10⁵. Especially, the Zn 26.07 (Sb₂Te)73.93 and Zn 29.67 (Sb₂Te)70.33 films exhibit a larger resistance change, faster crystallization speed, and better thermal stability due to the formation of amorphous Zn-Sb and Zn-Te phases as well as uniform distribution of Sb₂Te crystalline grains

Phase change behaviors of Zn-doped Ge2Sb2Te5 films

This work was financially supported by the Program for New Century Excellent Talents in University (Grant No. NCET-10-0976), the International Science & Technology Cooperation Program of China (Grant No. 2011DFA12040), the National Program on Key Basic Research Project (973 Program) (Grant No. 2012CB722703), the Natural Science Foundation of China (Grant Nos. 61008041 and 60978058), the Natural Science Foundation of Zhejiang Province, China (Grant No. Y1090996), the Natural Science Foundation of Ningbo City, China (Grant No. 2011A610092), the Program for Innovative Research Team of Ningbo city (Grant No. 2009B21007), and sponsored by K. C. Wong Magna Fund in Ningbo University

Improved phase-change characteristics of Zn-doped amorphous Sb₇Te₃ films for high-speed and low-power phase change memory

The superior performance of Zn-doped Sb₇Te₃ films might be favorable for the application in phase change memory. It was found that Zn dopants were able to suppress phase separation and form single stable Sb2Te crystal grain, diminish the grain size, and enhance the amorphous thermal stability of Sb₇Te₃ film. Especially, Zn 30.19(Sb₇Te₃)69.81 film has higher crystallization temperature (∼258 °C), larger crystallization activation energy (∼4.15 eV), better data retention (∼170.6 °C for 10 yr), wider band gap (∼0.73 eV), and higher crystalline resistance. The minimum times for crystallization of Zn 30.19(Sb₇Te₃)69.81 were revealed to be as short as ∼10 ns at a given proper laser power of 70 mW.This work was financially supported by the International Science & Technology Cooperation Program of China (Grant No. 2011DFA12040), the National Program on Key Basic Research Project (973 Program) (Grant No. 2012CB722703), the Natural Science Foundation of China (Grant Nos. 61008041 and 60978058), the CAS Special Grant for Postgraduate Research, Innovation and Practice, the Program for Innovative Research Team of Ningbo city (Grant No. 2009B21007), and sponsored by K. C. Wong Magna Fund in Ningbo University

A New Viscoelastic Model for Polycarbonate Compressing Flow

To overcome the weakness of conventional models in describing compressing flow especially in start and end stages the shear rate derivative was added to the right side of PTT constitutive equation. The ability of describing the well-known ‘shear shinning’ and ‘stretch harden’ phenomena was first illustrated by theoretical analysis. Then the governing equations for compressing flow were established in terms of incompressible and isothermal fluid, and the numerical method was constructed to discretize the equations and get the compressing flow solutions. The experiments with four melt temperatures were conducted and the corresponding simulations were performed. The better agreements with experimental data indicates the modified PPT model is superior to the original PTT model in prediction of compressing flow. In addition, the proposed model is also validated with low and high compressing speed experiments

Novel Ge–Ga–Te–CsBr Glass System with Ultrahigh Resolvability of Halide

International audienceCO2 molecule, one of the main molecules to create new life, should be probed accurately to detect the existence of life in exoplanets. The primary signature of CO2 molecule is approximately 15 μm, and traditional S- and Se-based glass fibers are unsuitable. Thus, Te-based glass is the only ideal candidate glass for far-infrared detection. In this study, a new kind of Te-based chalcohalide glass system was discovered with relatively stable and large optical band gap. A traditional melt-quenching method was adopted to prepare a series of (Ge15Ga10Te75)100-x (CsBr)x chalcogenide glass samples. Experiment results indicate that the glass-forming ability and thermal properties of glass samples were improved when CsBr was added in the host of Ge–Ga–Te glass. Ge–Ga–Te glass could remarkably dissolve CsBr content as much as 85 at.%, which is the highest halide content in all reports for Te-based chalcohalide glasses. Moreover, ΔT values of these glass samples were all above 100 °C. The glass sample (Ge15Ga10Te75)65 (CsBr)35 with ΔT of 119 °C was the largest, which was 7 °C larger than that of Ge15Ga10Te75 host glass. The infrared transmission spectra of these glasses show that the far-infrared cut-off wavelengths of (Ge15Ga10Te75)100-x (CsBr)x chalcogenide glasses were all beyond 25 μm. In conclusion, (Ge15Ga10Te75)100-x (CsBr)x chalcogenide glasses are potential materials for far-infrared optical applicatio

Novel NaI improved Ge–Ga–Te far-infrared chalcogenide glasses

International audienceIn this study, a novel Te-based glass system was investigated. Some properties of Ge–Ga–Te–NaI chalcogenide glasses such as physical, thermal and optical transmitting were discussed. XRD patterns show this glass system with best amorphous state can dissolve content of NaI as much as 35 at.%. The lowest cut-off wavelength of glass samples is 1645 nm which is the smallest wavelength among the reported Te-based glasses doping with halide. DSC curves indicate that all glass samples have good thermal stabilities (ΔT > 100 °C) and the highest ΔT value corresponding to (Ge15Ga10Te75)85(NaI)15 glass is 120 °C which is 8 °C greater than that of Ge–Ga–Te host glass. The infrared spectra manifest Ge–Ga–Te–NaI chalcogenide glass system has a wide infrared transmission window between 1.6 μm and 20 μm. Consequently, Ge–Ga–Te–NaI glasses can be a candidate material for far infrared optic imaging and bio-sensing application

Selenium‐doping induced two antiferromagnetic transitions in thiospinel compounds CuCo₂S_(4‐x)Se_x (0 ≤ x ≤ 0.8)

A series of copper thiospinels compounds, CuCo₂S_(4‐x)Se_x (x = 0, 0.2, 0.4, 0.6, 0.8), have been successfully synthesized by solid state reaction and their structure and magnetic properties have been studied. The Rietveld refinements of X‐Ray diffractions indicate that both the lattice constants and the nearest neighbor Cu‐Cu distances increase with increasing selenium doping. A weakly antiferromagnetic transition occurring at about 4 K is observed in CuCo₂S₄. Two antiferromagnetic transitions at about 3.5 K and 6 K are observed in selenium‐doped samples, which suggest that the exchange couplings associated with Cu‐S(Se)‐Cu and Cu‐Se(S)‐Cu, respectively, are responsible for the two antiferromagnetic transitions. Detailed analysis of the experimental results further indicate that the nearest‐neighbor molecular field coefficient is comparable to the next‐neighbor molecular field coefficient. We propose a reasonable model to explain this phenomenon