1,097 research outputs found

    Topological Crystalline Insulator and Quantum Anomalous Hall States in IV-VI based Monolayers and their Quantum Wells

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    Different from the two-dimensional (2D) topological insulator, the 2D topological crystalline insulator (TCI) phase disappears when the mirror symmetry is broken, e.g., upon placing on a substrate. Here, based on a new family of 2D TCIs - SnTe and PbTe monolayers - we theoretically predict the realization of the quantum anomalous Hall effect with Chern number C = 2 even when the mirror symmetry is broken. Remarkably, we also demonstrate that the considered materials retain their large-gap topological properties in quantum well structures obtained by sandwiching the monolayers between NaCl layers. Our results demonstrate that the TCIs can serve as a seed for observing robust topologically non-trivial phases.Comment: 5 pages, submitted on 27th Feb 201

    Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions

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    The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions are studied using first-principles calculations. For small MgO barrier thickness the minority-spin resonant bands at the two interfaces make a significant contribution to the tunneling conductance for the antiparallel magnetization, whereas these bands are, in practice, mismatched by disorder and/or small applied bias for the parallel magnetization. This explains the experimentally observed decrease in tunneling magnetoresistance (TMR) for thin MgO barriers. We predict that a monolayer of Ag epitaxially deposited at the interface between Fe and MgO suppresses tunneling through the interface band and may thus be used to enhance the TMR for thin barriers.Comment: 4 pages, 3 eps figures (2 in color), revtex

    ΠžΡΠΎΠ±Π΅Π½Π½ΠΎΡΡ‚ΠΈ строСния сСноманской газокондСнсатной Π·Π°Π»Π΅ΠΆΠΈ Π½Π° Заполярном мСстороТдСнии (ЯНАО)

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    By focusing fs-laser radiation in the volume of a transparent material the refractive index can be changed locally, leading to 3-dimensional waveguiding structures. Waveguides are written in phosphate glass (IOG from Schott) at a depth of 100 Β΅m below the surface. The pulse energy and the scan velocity are varied. For the first time the optical path difference caused by the waveguides and therefore the refractive index distribution of the waveguides and their cross sections are determined using interference microscopy. The optical path difference measured in the written structures and their cross sections is analyzed by a phase-shift algorithm. Thus, the refractive index distribution both along a line perpendicular to the waveguide and in the plane of a cross section is determined. The results are visualized as 2-dimensional graphics. Several regions of opposite sign of the refractive index change are observed in the cross sections of waveguides generated by femtosecond laser pulses. The number and the size of these regions are increasing with increasing pulse energy and decreasing scan velocity

    Spin-polarized tunneling between an antiferromagnet and a ferromagnet: First-principles calculations and transport theory

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    By combining first-principles calculations with transport theory we investigate the origin of the magnetoresistance of a magnetic tunnel junction consisting of a ferromagnetic and an antiferromagnetic lead. The (001) oriented Fe/vacuum/Cr planar junction serves as model junction. Even though the conduction electrons of antiferromagnetic Cr are spin-degenerate, it is possible to observe magnetoresistance due to two mechanisms: Firstly, the surface magnetism of Cr creates a spin-dependent potential barrier, and secondly, exchange-split surface states and resonances result in a tunneling conductance which depends on the relative orientation of the Fe and Cr magnetizations. Spin-dependent tunneling between a ferromagnet and an antiferromagnet happens frequently in tunneling setups such as in spin-polarized scanning tunneling microscopy or magnetic tunnel junctions for magnetic random access memory

    ИспользованиС ΠΊΠΎΡ€Ρ€Π΅ΠΊΡ‚Π½ΠΎΠ³ΠΎ нормирования статистичСских Π΄Π°Π½Π½Ρ‹Ρ… Π² кластСрном Π°Π½Π°Π»ΠΈΠ·Π΅

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    The fabrication of microchannels and self-assembled nanostructures in the volume of sapphire was performed by femtosecond laser irradiation followed by chemical etching with aqueous solution of HF acid. Depending on the focusing conditions self-organized nanostructures or elliptical microchannels are produced. While the dimensions in two directions are on a micro- respectively nanoscale, feature lengths of up to 1 mm are achieved. This comes out to aspect ratios of more than 1000. This fabrication technique is potentially usable for photonic crystal based integrated optical elements or microfluidic devices for applications in life science, biology or chemistry

    Density of Phonon States in Superconducting FeSe as a Function of Temperature and Pressure

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    The temperature and pressure dependence of the partial density of phonon states of iron atoms in superconducting Fe1.01Se was studied by 57Fe nuclear inelastic scattering (NIS). The high energy resolution allows for a detailed observation of spectral properties. A sharpening of the optical phonon modes and shift of all spectral features towards higher energies by ~4% with decreasing temperature from 296 K to 10 K was found. However, no detectable change at the tetragonal - orthorhombic phase transition around 100 K was observed. Application of a pressure of 6.7 GPa, connected with an increase of the superconducting temperature from 8 K to 34 K, results in an increase of the optical phonon mode energies at 296 K by ~12%, and an even more pronounced increase for the lowest-lying transversal acoustic mode. Despite these strong pressure-induced modifications of the phonon-DOS we conclude that the pronounced increase of Tc in Fe1.01Se with pressure cannot be described in the framework of classical electron-phonon coupling. This result suggests the importance of spin fluctuations to the observed superconductivity

    Элитарная языковая Π»ΠΈΡ‡Π½ΠΎΡΡ‚ΡŒ: ΠΎΠΏΡ‹Ρ‚ модСлирования (Π½Π° ΠΌΠ°Ρ‚Π΅Ρ€ΠΈΠ°Π»Π΅ русского эпистолярия Π₯Π₯?Π₯Π₯? Π²Π².)

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    ИсслСдованиС Π²Ρ‹ΠΏΠΎΠ»Π½Π΅Π½ΠΎ Π² Ρ€Π°ΠΌΠΊΠ°Ρ… лингвопСрсонологичСского ΠΈ дискурсоориСнтированного ΠΏΠΎΠ΄Ρ…ΠΎΠ΄ΠΎΠ² с ΠΎΠΏΠΎΡ€ΠΎΠΉ Π½Π° послСдниС достиТСния Π² области Ρ„ΡƒΠ½ΠΊΡ†ΠΈΠΎΠ½Π°Π»ΡŒΠ½ΠΎΠΉ ΠΈ ΠΊΠΎΠΌΠΌΡƒΠ½ΠΈΠΊΠ°Ρ‚ΠΈΠ²Π½ΠΎΠΉ стилистики, ΠΊΠΎΠ³Π½ΠΈΡ‚ΠΈΠ²Π½ΠΎΠΉ лингвистики, Π»ΠΈΠ½Π³Π²ΠΎΠΊΡƒΠ»ΡŒΡ‚ΡƒΡ€ΠΎΠ»ΠΎΠ³ΠΈΠΈ, ТанровСдСния ΠΈ прагмалингвистики. Π’ качСствС эмпиричСской Π±Π°Π·Ρ‹ Π²Ρ‹ΡΡ‚ΡƒΠΏΠ°ΡŽΡ‚ частныС письма прСдставитСлСй русской творчСской ΠΈΠ½Ρ‚Π΅Π»Π»ΠΈΠ³Π΅Π½Ρ†ΠΈΠΈ - Ρ…ΡƒΠ΄ΠΎΠΆΠ½ΠΈΠΊΠ°, ΠΎΠΏΠ΅Ρ€Π½ΠΎΠ³ΠΎ ΠΏΠ΅Π²Ρ†Π°, ΠΊΠΎΠΌΠΏΠΎΠ·ΠΈΡ‚ΠΎΡ€Π°, ΠΏΠ°Ρ‚Ρ€ΠΈΠ°Ρ€Ρ…Π°, поэтов, публицистов, ΡƒΡ‡Π΅Π½Ρ‹Ρ…, Π°ΠΊΡ‚Π΅Ρ€ΠΎΠ², Π² Π±ΠΎΠ»ΡŒΡˆΠΈΠ½ΡΡ‚Π²Π΅ своСм Π½Π΅ ΠΈΠ·ΡƒΡ‡Π΅Π½Π½Ρ‹Π΅ Π² лингвистичСском ΠΎΡ‚Π½ΠΎΡˆΠ΅Π½ΠΈΠΈ. Π Π°Π±ΠΎΡ‚Ρƒ ΠΎΡ‚Π»ΠΈΡ‡Π°Π΅Ρ‚ динамичСский аспСкт рассмотрСния заявлСнной ΠΏΡ€ΠΎΠ±Π»Π΅ΠΌΠ°-Ρ‚ΠΈΠΊΠΈ Π½Π° протяТСнии Π·Π½Π°Ρ‡ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΠ³ΠΎ историчСского ΠΏΠ΅Ρ€ΠΈΠΎΠ΄Π° - Π₯Π₯-Π₯Π₯I Π²Π². Π‘ΠΊΠ°Π·Π°Π½Π½ΠΎΠ΅ опрСдСляСт Π°ΠΊΡ‚ΡƒΠ°Π»ΡŒΠ½ΠΎΡΡ‚ΡŒ ΡΡ‚Π°Ρ‚ΡŒΠΈ. ЦСль исслСдования - созданиС ΠΈΠ½Π²Π°Ρ€ΠΈΠ°Π½Ρ‚Π° языковой личности, ΠΏΡ€ΠΈΠ½Π°Π΄Π»Π΅ΠΆΠ°Ρ‰Π΅ΠΉ элитарному Ρ‚ΠΈΠΏΡƒ Ρ€Π΅Ρ‡Π΅Π²ΠΎΠΉ ΠΊΡƒΠ»ΡŒΡ‚ΡƒΡ€Ρ‹. Π’ связи с этим ΠΈΡΠΏΠΎΠ»ΡŒΠ·ΡƒΡŽΡ‚ΡΡ Ρ‚Π°ΠΊΠΈΠ΅ ΠΌΠ΅Ρ‚ΠΎΠ΄Ρ‹, ΠΊΠ°ΠΊ ΠΏΡ€ΠΈΠ΅ΠΌ модСлирования, ΠΊΠΎΠΌΠΌΡƒΠ½ΠΈΠΊΠ°Ρ‚ΠΈΠ²Π½ΠΎ-прагматичСский ΠΈ ΡΠΎΠΏΠΎΡΡ‚Π°Π²ΠΈΡ‚Π΅Π»ΡŒΠ½Ρ‹ΠΉ Π°Π½Π°Π»ΠΈΠ·. Π’ Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚Π°Ρ‚Π΅ осущСствлСнного исслСдования Π½Π° основС ΠΎΠΏΡ€Π΅Π΄Π΅Π»Π΅Π½Π½Ρ‹Ρ… дискурсивных ΠΏΠ°Ρ€Π°ΠΌΠ΅Ρ‚Ρ€ΠΎΠ² создана модСльная элитарная языковая Π»ΠΈΡ‡Π½ΠΎΡΡ‚ΡŒ, особСнности ΠΊΠΎΠΌΠΌΡƒΠ½ΠΈΠΊΠ°Ρ‚ΠΈΠ²Π½ΠΎΠ³ΠΎ повСдСния ΠΊΠΎΡ‚ΠΎΡ€ΠΎΠΉ ΡΠΊΡΠΏΠ»ΠΈΡ†ΠΈΡ€ΡƒΡŽΡ‚ΡΡ Π² ΠΊΠΎΠ½ΠΊΡ€Π΅Ρ‚Π½Ρ‹Ρ… ситуациях личностно ΠΎΡ€ΠΈΠ΅Π½Ρ‚ΠΈΡ€ΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ эпистолярного общСния. Π’ качСствС Π²Ρ‹Π²ΠΎΠ΄Π° приводится ΠΏΠ΅Ρ€Π΅Ρ‡Π΅Π½ΡŒ ΠΈΠ½Π²Π°Ρ€ΠΈΠ°Π½Ρ‚Π½Ρ‹Ρ… свойств ΠΎΠ±ΠΎΠ·Π½Π°Ρ‡Π΅Π½Π½ΠΎΠ³ΠΎ Ρ‚ΠΈΠΏΠ° языковой личности: Ρ€Π΅Ρ„Π»Π΅ΠΊΡΠΈΠ²Π½ΠΎΡΡ‚ΡŒ сознания, особСнно замСтная Π² ситуациях осмыслСния Ρ€ΠΎΠ»ΠΈ Ρ‚Π²ΠΎΡ€Ρ†Π° Π² социумС, высокий ΡƒΡ€ΠΎΠ²Π΅Π½ΡŒ ΠΊΠΎΠΌΠΌΡƒΠ½ΠΈΠΊΠ°Ρ‚ΠΈΠ²Π½ΠΎΠΉ компСтСнтности ΠΈ риторичСского мастСрства, ΠΎΡ‚ΠΊΡ€Ρ‹Ρ‚ΠΎΡΡ‚ΡŒ дискурсивных проявлСний

    Maximally Localized Wannier Functions within the FLAPW formalism

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    We report on the implementation of the Wannier Functions (WFs) formalism within the full-potential linearized augmented plane wave method (FLAPW), suitable for bulk, film and one-dimensional geometries. The details of the implementation, as well as results for the metallic SrVO3, ferroelectric BaTiO3 grown on SrTiO3, covalently bonded graphene and a one-dimensional Pt-chain are given. We discuss the effect of spin-orbit coupling on the Wannier Functions for the cases of SrVO3 and platinum. The dependency of the WFs on the choice of the localized trial orbitals as well as the difference between the maximally localized and "first-guess" WFs are discussed. Our results on SrVO3 and BaTiO3, e.g. the ferroelectric polarization of BaTiO3, are compared to results published elsewhere and found to be in excellent agreement.Comment: 13 pages, 9 figures, accepted for publication in Phys. Rev.
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