Oxide Thin Film Li-Battery Materials: Synthesis, Interface Properties and Electrochemical Performance

We will introduce our approach to prepare and investigate thin film materials for application in all solid state batteries by using integrated UHV preparation facilities

Characterization of the Interfaces in LiFePO4/PEO-LiTFSI Composite Cathodes and to the Adjacent Layers

Interface resistances between the different components of battery cells limit their fast charge and discharge capability which is required for different applications such as electromobility. To decrease interface resistances, it is necessary to understand which individual interface they arise at and how they can be controlled. Electrochemical impedance spectroscopy is a well-established technique for the distinction of different contributions to the internal cell resistance and allows the characterization of interface resistances. Especially the use of suitable cell setups allows one to attribute the measured resistances to specific interfaces. In this contribution, we investigate the impedance of dry polymer full cells containing a lithium iron phosphate/ poly(ethylene oxide)-lithium bis(trifluoromethanesulfonyl)imide composite cathode, a solid polymer electrolyte separator and a lithium-metal anode. Based on the results on different cell setups, we are able to reliably determine the planar resistances between the components as well as the charge transfer resistance inside the composite cathode. For unoptimized systems, we find high planar resistances, which can be significantly reduced by coating and processing strategies. For the charge transfer resistance, we find a dependence on the SOC as well as on the charging direction. Possible mechanisms for the evolution of interface resistances are discussed also based on chemical analysis performed by photoelectron spectroscopy (XPS)

Laterally inhomogeneous surface-potential distribution and photovoltage at clustered In/WSe₂(0001) interfaces

Small increments of indium were evaporated at 300 and 100 K onto the van der Waals (0001) surface of p-type WSe₂ crystals. The interface formation was investigated in vacuo with x-ray photoemission spectroscopy, ultraviolet photoemisson spectroscopy, soft-x-ray photoemission spectroscopy, and low-energy electron diffraction. Additional scanning tunneling microscopy (STM), scanning electron microscopy (SEM), and microprobe measurements were performed ex situ. For deposition at 300 K a nonreactive interface is formed and the indium layer grows in the Volmer-Weber growth mode. The size and distribution of the In clusters for specific coverages were determined ex situ by STM and SEM. The band bending of 0.55 eV, as determined from binding-energy shifts of the substrate emissions, is far below the expected Schottky-limit value of 1.1 eV. The observed surface-photovoltage (SPV) shifts of the substrate emission lines are smaller (up to 0.2 eV) than those from the adsorbate lines. The maximum adsorbate SPV shift of 0.6 eV at 150 K exceeds the measured band bending, indicating that the band bending beneath the In clusters must be larger than between them. At a sample temperature of 100 K, In forms atomically flat layers (Frank–van der Merwe growth) allowing the determination of the actual band bending of 0.9–1.0 eV below the In-covered surface. For these conditions, the SPV is only 0.1 eV due to an electrical leakage current. During warmup to 300 K, a transition to the clustered interface occurs. For this interface, the band bending below the indium clusters could also be determined from temperature-dependent SPV measurements. The determined barrier height of 1.04 eV is in good agreement with the value measured at the unclustered interface

Polarization dependence of ZnO Schottky barriers revealed by photoelectron spectroscopy

In order to answer the question of whether Schottky barriers on polar ZnO surfaces are different at Zn- and O-terminated surfaces, the interface formation of n-type ZnO and different high work function metals and metal oxides (Pt, PtOₓ, and RuO₂) with Schottky barrier heights of up to 1.5 eV has been studied using photoelectron spectroscopy with in situ sample preparation. The experiments are designed to exclude the effects of substrate reduction and consequent Fermi level pinning by high concentrations of oxygen vacancies. Moreover, by including the Zn LMM Auger emission in the analysis, it is demonstrated that an accurate extraction of barrier heights needs to take into account that the screening of the photoelectron core hole can change in the course of contact formation. The polarization dependence of Schottky barriers, which is important for piezotronic applications, is in most cases dominated by the influence of defects. Reducing the influence of defects, up to ∼240 meV higher Schottky barriers are revealed on oxygen-terminated surfaces. This is opposite to what has been reported in the literature but agrees with the dependence of barrier heights expected for an incomplete screening of the polarization of ZnO by the electrode as for ferroelectric materials

Electronic band structure of single-crystal and single-layer WS₂: Influence of interlayer van der Waals interactions

The valence band structure of the layered transition metal dichalcogenide WS₂ has been determined experimentally by angle resolved photoelectron spectroscopy and theoretically by augmented spherical wave band structure calculations as based on density functional theory. Good agreement between experimental and calculated band structure is observed for single crystal WS₂. An experimental band structure of a single layer was determined from an electronically decoupled film prepared on a single crystalline graphite substrate by metal-organic van der Waals epitaxy. The polarization dependent photoemission selection rules of the single layer film are appropriate for a free standing film. The experimental single layer band structure shows some differences compared to band structure calculations using bulk atomic positions within the layer. We conclude that relaxation of the single layer occurs as a consequence of the missing interlayer interactions leading to close agreement between electronic structure of the single layer and single crystal. As a consequence of the missing interlayer interactions the valence band maximum for the single layer is located at the K point of the Brillouin zone

Electronically Decoupled Films of InSe Prepared by van der Waals Epitaxy: Localized and Delocalized Valence States

Submonolayer to several monolayer thick films of the layered semiconductor InSe were deposited on highly oriented pyrolytic graphite by van der Waals epitaxy and probed by energy dependent angle resolved photoelectron spectroscopy. The layers show a transition from two-dimensional bands with atomiclike states to molecularlike states localized along the c direction normal to the surface. The extended band structure showing band dispersion was observed for thicker films

Dangling Bond Defects on Si Surfaces and Their Consequences on Energy Band Diagrams: From a Photoelectrochemical Perspective

Using silicon in multijunction photocells leads to promising device structures for direct photoelectrochemical water splitting. In this regard, photoelectron spectra of silicon surfaces are used to investigate the energetic condition of contact formation. It is shown that the Fermi‐level position at the surface differs from the values expected from their bulk doping concentrations, indicating significant surface band bending which may limit the overall device efficiency. In this study, the influence of different surface preparation procedures for p‐ and n‐doped Si wafers on surface band bending is investigated. With the help of photoemission and X‐ray absorption spectroscopy, Si dangling bonds are identified as dominating defect centers at Si surfaces. These defects lead to an occupied defect band in the lower half and an unoccupied defect band in the upper half of the Si bandgap. However, partial oxidation of the defect centers causes a shift of defect bands, with only donor states remaining in the Si bandgap. Source‐induced photovoltages at cryogenic temperatures indicate that partial surface oxidation also decreases the recombination activity of these defect centers. It is shown that defect distribution, defect concentration, and source‐induced photovoltages need to be considered when analyzing Fermi‐level pinning at Si surfaces

Chemical and electronic characterization of methyl-terminated Si(111) surfaces by high-resolution synchrotron photoelectron spectroscopy

The chemical state, electronic properties, and geometric structure of methyl-terminated Si(111) surfaces prepared using a two-step chlorination/alkylation process were investigated using high-resolution synchrotron photoelectron spectroscopy and low-energy electron diffraction methods. The electron diffraction data indicated that the methylated Si surfaces maintained a (1×1) structure, where the dangling bonds of the silicon surface atoms were terminated by methyl groups. The surfaces were stable to annealing at 720 K. The high degree of ordering was reflected in a well-resolved vibrational fine structure of the carbon 1s photoelectron emission, with the fine structure arising from the excitation of C-H stretching vibrations having hnu=0.38±0.01 eV. The carbon-bonded surface Si atoms exhibited a well-defined x-ray photoelectron signal having a core level shift of 0.30±0.01 eV relative to bulk Si. Electronically, the Si surface was close to the flat-band condition. The methyl termination produced a surface dipole of –0.4 eV. Surface states related to piCH3 and sigmaSi-C bonding orbitals were identified at binding energies of 7.7 and 5.4 eV, respectively. Nearly ideal passivation of Si(111) surfaces can thus be achieved by methyl termination using the two-step chlorination/alkylation process

Band alignment at the BaCuSeF/ZnTe interface

In situ photoemission spectroscopy experiments are used to characterize the interface between ZnTe and the wide band gap p-type semiconductor BaCuSeF. The contact is characterized by a null valence-band offset, a large conduction-band offset, and a chemically graded interface. By applying the transitivity rule for band offset and on the basis of similarities in chemical composition, BaCuSeF contact to chalcogenide photovoltaic absorber materials would be expected to have similar properties. By extension, BaCuChF (Ch=S,Se,Te) materials are suitable as p-layers in p-i-n double-heterojunction solar cells fabricated with CdTe, Cu(InGa)Se₂, and Cu₂ZnSnS₄ absorbers.This is the publisher’s final pdf. The published article is copyrighted by the American Institute of Physics and can be found at: http://scitation.aip.org/content/aip/journal/apl.Article Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics