33 research outputs found
Proximity-Coupled Ti/TiN Multilayers for use in Kinetic Inductance Detectors
We apply the superconducting proximity effect in TiN/Ti multi-layer films to
tune the critical temperature, Tc, to within 10 mK with high uniformity (less
than 15 mK spread) across a 75 mm wafer. Reproducible Tc's are obtained from
0.8 - 2.5 K. These films had high resistivities, > 100 uOhm-cm and internal
quality factors for resonators in the GHz range on the order of 100k and
higher. Both trilayers of TiN/Ti/TiN and thicker superlattice films were
prepared, demonstrating a highly controlled process for films over a wide
thickness range. Detectors were fabricated and showed single photon resolution
at 1550 nm. The high uniformity and controllability coupled with the high
quality factor, kinetic inductance, and inertness of TiN make these films ideal
for use in frequency multiplexed kinetic inductance detectors and other
potential applications such as nanowire detectors, transition edge sensors and
associated quantum information applications
A titanium-nitride near-infrared kinetic inductance photon-counting detector and its anomalous electrodynamics
We demonstrate single-photon counting at 1550 nm with titanium-nitride (TiN)
microwave kinetic inductance detectors. Energy resolution of 0.4 eV and
arrival-time resolution of 1.2 microseconds are achieved. 0-, 1-, 2-photon
events are resolved and shown to follow Poisson statistics. We find that the
temperature-dependent frequency shift deviates from the Mattis-Bardeen theory,
and the dissipation response shows a shorter decay time than the frequency
response at low temperatures. We suggest that the observed anomalous
electrodynamics may be related to quasiparticle traps or subgap states in the
disordered TiN films. Finally, the electron density-of-states is derived from
the pulse response.Comment: 4 pages, 3 figure
Sub-micrometer epitaxial Josephson junctions for quantum circuits
We present a fabrication scheme and testing results for epitaxial
sub-micrometer Josephson junctions. The junctions are made using a
high-temperature (1170 K) "via process" yielding junctions as small as 0.8 mu m
in diameter by use of optical lithography. Sapphire (Al2O3) tunnel-barriers are
grown on an epitaxial Re/Ti multilayer base-electrode. We have fabricated
devices with both Re and Al top electrodes. While room-temperature (295 K)
resistance versus area data are favorable for both types of top electrodes, the
low-temperature (50 mK) data show that junctions with the Al top electrode have
a much higher subgap resistance. The microwave loss properties of the junctions
have been measured by use of superconducting Josephson junction qubits. The
results show that high subgap resistance correlates to improved qubit
performance
Robust Finite-Frequency H2 Analysis
Finite-frequency H2 analysis is relevant to a number of problems in which a priori information is available on the frequency domain of interest. This paper addresses the problem of analyzing robust finite-frequency H2 performance of systems with structured uncertainties. An upper bound on this measure is provided by exploiting convex optimization tools for robustness analysis and the notion of finite-frequency Gramians. An application to a comfort analysis problem for an aircraft aeroelastic model is presented