866 research outputs found

    Anisotropic thermal expansion and magnetostriction of YNi2_2B2_2C single crystals

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    We present results of anisotropic thermal expansion and low temperature magnetostriction measurements on YNi2_2B2_2C single crystals grown by high temperature flux and floating zone techniques. Quantum oscillations of magnetostriction were observed at low temperatures for HcH \| c starting at fields significantly below Hc2H_{c2} (H<0.7Hc2H < 0.7 H_{c2}). Large irreversible, longitudinal magnetostriction was seen in both, in-plane and along the c-axis, directions of the applied magnetic field in the intermediate superconducting state. Anisotropic uniaxial pressure dependencies of TcT_c were evaluated using results of zero field, thermal expansion measurements

    A Vehicular Traffic Flow Model Based on a Stochastic Acceleration Process

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    A new vehicular traffic flow model based on a stochastic jump process in vehicle acceleration and braking is introduced. It is based on a master equation for the single car probability density in space, velocity and acceleration with an additional vehicular chaos assumption and is derived via a Markovian ansatz for car pairs. This equation is analyzed using simple driver interaction models in the spatial homogeneous case. Velocity distributions in stochastic equilibrium, together with the car density dependence of their moments, i.e. mean velocity and scattering and the fundamental diagram are presented.Comment: 27 pages, 6 figure

    Slow Noncollinear Coulomb Scattering in the Vicinity of the Dirac Point in Graphene

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    The Coulomb scattering dynamics in graphene in energetic proximity to the Dirac point is investigated by polarization resolved pump-probe spectroscopy and microscopic theory. Collinear Coulomb scattering rapidly thermalizes the carrier distribution in k directions pointing radially away from the Dirac point. Our study reveals, however, that, in almost intrinsic graphene, full thermalization in all directions relying on noncollinear scattering is much slower. For low photon energies, carrier-optical-phonon processes are strongly suppressed and Coulomb mediated noncollinear scattering is remarkably slow, namely on a ps time scale. This effect is very promising for infrared and THz devices based on hot carrier effects

    Competing Ultrafast Energy Relaxation Pathways in Photoexcited Graphene

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    For most optoelectronic applications of graphene a thorough understanding of the processes that govern energy relaxation of photoexcited carriers is essential. The ultrafast energy relaxation in graphene occurs through two competing pathways: carrier-carrier scattering -- creating an elevated carrier temperature -- and optical phonon emission. At present, it is not clear what determines the dominating relaxation pathway. Here we reach a unifying picture of the ultrafast energy relaxation by investigating the terahertz photoconductivity, while varying the Fermi energy, photon energy, and fluence over a wide range. We find that sufficiently low fluence (\lesssim 4 μ\muJ/cm2^2) in conjunction with sufficiently high Fermi energy (\gtrsim 0.1 eV) gives rise to energy relaxation that is dominated by carrier-carrier scattering, which leads to efficient carrier heating. Upon increasing the fluence or decreasing the Fermi energy, the carrier heating efficiency decreases, presumably due to energy relaxation that becomes increasingly dominated by phonon emission. Carrier heating through carrier-carrier scattering accounts for the negative photoconductivity for doped graphene observed at terahertz frequencies. We present a simple model that reproduces the data for a wide range of Fermi levels and excitation energies, and allows us to qualitatively assess how the branching ratio between the two distinct relaxation pathways depends on excitation fluence and Fermi energy.Comment: Nano Letters 201

    Generation of photovoltage in graphene on a femtosecond time scale through efficient carrier heating

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    Graphene is a promising material for ultrafast and broadband photodetection. Earlier studies addressed the general operation of graphene-based photo-thermoelectric devices, and the switching speed, which is limited by the charge carrier cooling time, on the order of picoseconds. However, the generation of the photovoltage could occur at a much faster time scale, as it is associated with the carrier heating time. Here, we measure the photovoltage generation time and find it to be faster than 50 femtoseconds. As a proof-of-principle application of this ultrafast photodetector, we use graphene to directly measure, electrically, the pulse duration of a sub-50 femtosecond laser pulse. The observation that carrier heating is ultrafast suggests that energy from absorbed photons can be efficiently transferred to carrier heat. To study this, we examine the spectral response and find a constant spectral responsivity between 500 and 1500 nm. This is consistent with efficient electron heating. These results are promising for ultrafast femtosecond and broadband photodetector applications.Comment: 6 pages, 4 figure

    Calculated phase diagrams, iron tolerance limits, and corrosion of Mg-Al alloys

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    The factors determining corrosion are reviewed in this paper, with an emphasis on iron tolerance limit and the production of high-purity castings. To understand the iron impurity tolerance limit, magnesium phase diagrams were calculated using the Pandat software package. Calculated phase diagrams can explain the iron tolerance limit and the production of high-purity castings by means of control of melt conditions; this is significant for the production of quality castings from recycled magnesium. Based on the new insight, the influence of the microstructure on corrosion of magnesium alloys is reviewed

    Upper critical field pecularities of superconducting YNi2B2C and LuNi2B2C

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    We present new upper critical field Hc2(T) data in a broad temperature region from 0.3K to Tc for LuNi2B2C and YNi2B2C single crystals with well characterized low impurity scattering rates. The absolute values for all T, in particular Hc2(0), and the sizeable positive curvature (PC) of Hc2(T) at high and intermediate T are explained quantitatively within an effective two-band model. The failure of the isotropic single band approach is discussed in detail. Supported by de Haas van Alphen data, the superconductivity reveals direct insight into details of the electronic structure. The observed maximal PC near Tc gives strong evidence for clean limit type II superconductors.Comment: 4 pages, 2 figures, Phys. Rev. Lett. accepte
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