Charge separation technique for metal–oxide–silicon capacitors in the presence of hydrogen deactivated dopants

An improved charge separation technique for metal-oxide-silicon (MOS) capacitors is presented which accounts for the deactivation of substrate dopants by hydrogen at elevated irradiation temperatures or small irradiation biases. Using high-frequency capacitance-voltage (C-V) measurements, radiation-induced inversion voltage shifts are separated into components due to oxide trapped charge, interface traps and deactivated dopants, where the latter is computed from a reduction in Si capacitance. In the limit of no radiation-induced dopant deactivation, this approach reduces to the standard midgap charge separation technique used widely for the analysis of room-temperature irradiations. The technique is demonstrated on a p-type MOS capacitor irradiated with {sup 60}Co {gamma}-rays at 100 C and zero bias, where the dopant deactivation is significant

The positive inotropic effect of glucagon in the chronically failed right ventricle as demonstrated in the isolated cat heart

Previous in vitro studies has provided evidence to show that papillary muscles obtained from cats with chronic right ventricular failure had lost their ability to develop a positive inotropic response to glucagon. Since it is difficult to extrapolate from the isolated papillary muscle to the intact heart, studies were done to assess the effects of glucagon in the perfused isovolumically beating heart obtained from cats four months after surgical banding of the pulmonary artery for the experimental production of chronic right ventricular failure (CRVF). At the peak of the dose-response curve, glucagon increased right ventricular isovolumic pressure 25% (39.00 +/- 4.37 to 49.67 +/- 5.15 mm Hg; p p p p < 0.025). These results provide evidence that glucagon possesses the capacity to augment myocardial contractility in the heart with experimentally induced chronic right ventricular failure.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/22047/1/0000465.pd

Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants

An improved charge separation technique for metal-oxide-silicon (MOS) capacitors is presented which accounts for the deactivation of substrate dopants by hydrogen at elevated irradiation temperatures or small irradiation biases. Using high-frequency capacitance-voltage (C-V) measurements, radiation-induced inversion voltage shifts are separated into components due to oxide trapped charge, interface traps and deactivated dopants, where the latter is computed from a reduction in Si capacitance. In the limit of no radiation-induced dopant deactivation, this approach reduces to the standard midgap charge separation technique used widely for the analysis of room-temperature irradiations. The technique is demonstrated on a p-type MOS capacitor irradiated with {sup 60}Co {gamma}-rays at 100 C and zero bias, where the dopant deactivation is significant

Field Dependent Dopant Deactivation in Bipolar Devices at Elevated irradiation Temperatures

Metal-oxide-silicon capacitors fabricated in a bi-polar process were examined for densities of oxide trapped charge, interface traps and deactivated substrate acceptors following high-dose-rate irradiation at 100 C. Acceptor neutralization near the Si surface occurs most efficiently for small irradiation biases in depletion. The bias dependence is consistent with compensation and passivation mechanisms involving the drift of H{sup +} ions in the oxide and Si layers and the availability of holes in the Si depletion region. Capacitor data from unbiased irradiations were used to simulate the impact of acceptor neutralization on the current gain of an npn bipolar transistor. Neutralized acceptors near the base surface enhance current gain degradation associated with radiation-induced oxide trapped charge and interface traps by increasing base recombination. The additional recombination results from the convergence of carrier concentrations in the base and increased sensitivity of the base to oxide trapped charge. The enhanced gain degradation is moderated by increased electron injection from the emitter. These results suggest that acceptor neutralization may enhance radiation-induced degradation of linear circuits at elevated temperatures

Thermal-stress effects on enhanced low-dose-rate sensitivity of linear bipolar circuits

Thermal-stress effects are shown to have a significant impact on the enhanced low-dose-rate sensitivity of linear bipolar circuits. Implications of these results on hardness assurance testing and mechanisms are discussed