Single Electron Transistors

Contains description of one research project and a list of publications.Joint Services Electronics Program Contract DAAL03-92-C-0001National Science Foundation Grant ECS 88-13250National Science Foundation Grant ECS 92-0342

Intensity of Coulomb Interaction between quasiparticles in diffusive metallic wires

The energy dependence and intensity of Coulomb interaction between quasiparticles in metallic wires is obtained from two different methods: determination of the temperature dependence of the phase coherence time from the magnetoresistance, and measurements of the energy distribution function in out-of-equilibrium situations. In both types of experiment, the energy dependence of the Coulomb interaction is found to be in excellent agreement with theoretical predictions. In contrast, the intensity of the interaction agrees closely with theory only with the first method, whereas an important discrepancy is found using the second one. Different explanations are proposed, and results of a test experiment are presented.Comment: Submitted to Solid States Communication

Single Electron Transistors

Contains description of one research project.Joint Services Electronics Program Contract DAAL03-89-C-0001Joint Services Electronics Program Contract DAAL03-92-C-0001National Science Foundation Grant ECS 88-1325

Interaction effects and phase relaxation in disordered systems

This paper is intended to demonstrate that there is no need to revise the existing theory of the transport properties of disordered conductors in the so-called weak localization regime. In particular, we demonstrate explicitly that recent attempts to justify theoretically that the dephasing rate (extracted from the magnetoresistance) remains finite at zero temperature are based on the profoundly incorrect calculation. This demonstration is based on a straightforward evaluation of the effect of the electron-electron interaction on the weak localization correction to the conductivity of disordered metals. Using well-controlled perturbation theory with the inverse conductance $g$ as the small parameter, we show that this effect consists of two contributions. First contribution comes from the processes with energy transfer smaller than the temperature. This contribution is responsible for setting the energy scale for the magnetoresistance. The second contribution originates from the virtual processes with energy transfer larger than the temperature. It is shown that the latter processes have nothing to do with the dephasing, but rather manifest the second order (in $1/g$) correction to the conductance. This correction is calculated for the first time. The paper also contains a brief review of the existing experiments on the dephasing of electrons in disordered conductors and an extended qualitative discussion of the quantum corrections to the conductivity and to the density of electronic states in the weak localization regime.Comment: 34 pages, 13 .eps figure

Electronic Transport in a Three-dimensional Network of 1-D Bismuth Quantum Wires

The resistance R of a high density network of 6 nm diameter Bi wires in porous Vycor glass is studied in order to observe its expected semiconductor behavior. R increases from 300 K down to 0.3 K. Below 4 K, where R varies approximately as ln(1/T), the order-of-magnitude of the resistance rise, as well as the behavior of the magnetoresistance are consistent with localization and electron-electron interaction theories of a one-dimensional disordered conductor in the presence of strong spin-orbit scattering. We show that this behaviour and the surface-enhanced carrier density may mask the proposed semimetal-to-semiconductor transition for quantum Bi wires.Comment: 19 pages total, 4 figures; accepted for publication in Phys. Rev.

Dephasing of Electrons by Two-Level Defects in Quantum Dots

The electron dephasing time $\tau_{\phi}$ in a diffusive quantum dot is calculated by considering the interaction between the electron and dynamical defects, modelled as two-level system. Using the standard tunneling model of glasses, we obtain a linear temperature dependence of $1/\tau_{\phi}$, consistent with the experimental observation. However, we find that, in order to obtain dephasing times on the order of nanoseconds, the number of two-level defects needs to be substantially larger than the typical concentration in glasses. We also find a finite system-size dependence of $\tau_{\phi}$, which can be used to probe the effectiveness of surface-aggregated defects.Comment: two-column 9 page

UK Large-scale Wind Power Programme from 1970 to 1990: the Carmarthen Bay experiments and the Musgrove Vertical-Axis Turbines

This article describes the development of the Musgrove Vertical Axis Wind Turbine (VAWT) concept, the UK ‘Carmarthen Bay’ wind turbine test programme, and UK government’s wind power programme to 1990. One of the most significant developments in the story of British wind power occurred during the 1970s, 1980s, and 1990s, with the development of the Musgrove vertical axis wind turbine and its inclusion within the UK Government’s wind turbine test programme. Evolving from a supervisor’s idea for an undergraduate project at Reading University, the Musgrove VAWT was once seen as an able competitor to the horizontal axis wind systems that were also being encouraged at the time by both the UK government and the Central Electricity Generating Board, the then nationalised electricity utility for England and Wales. During the 1980s and 1990s the most developed Musgrove VAWT system, along with three other commercial turbine designs was tested at Carmarthen Bay, South Wales as part of a national wind power test programme. From these developmental tests, operational data was collected and lessons learnt, which were incorporated into subsequent wind power operations.http://dx.doi.org/10.1260/03095240677860621

Strong localization of electrons in quasi-one-dimensional conductors

We report on the experimental study of electron transport in sub-micron-wide ''wires'' fabricated from Si $\delta$-doped GaAs. These quasi-one-dimensional (Q1D) conductors demonstrate the crossover from weak to strong localization with decreasing the temperature. On the insulating side of the crossover, the resistance has been measured as a function of temperature, magnetic field, and applied voltage for different values of the electron concentration, which was varied by applying the gate voltage. The activation temperature dependence of the resistance has been observed with the activation energy close to the mean energy spacing of electron states within the localization domain. The study of non-linearity of the current-voltage characteristics provides information on the distance between the critical hops which govern the resistance of Q1D conductors in the strong localization (SL) regime. We observe the exponentially strong negative magnetoresistance; this orbital magnetoresistance is due to the universal magnetic-field dependence of the localization length in Q1D conductors. The method of measuring of the single-particle density of states (DoS) in the SL regime has been suggested. Our data indicate that there is a minimum of DoS at the Fermi level due to the long-range Coulomb interaction.Comment: 12 pages, 11 figures; the final version to appear in Phys. Rev.