High-temperature electrical conductivity of aluminium nitride

The electrical conductivity of hot-pressed polycrystalline aluminium nitride doped with oxygen and beryllium was measured as a function of temperature from 800 to 1200° C and over a range of nitrogen partial pressure from 10 2 to 10 5 Pa. The effect of beryllium dopant, the independence of conductivity from nitrogen partial pressure, and the observed activation energy suggested extrinsic electronic species or aluminium vacancies as charge carriers. Polarization measurements made with one electrode blocking to ionic species indicated that the aluminium nitride with oxygen impurity was an extrinsic electronic conductor.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/44688/1/10853_2005_Article_BF01161209.pd

Direct search for light gluinos

We present the results for a direct search for light gluinos through the appearance of $\eta\rightarrow 3\pi^{0}$ with high transverse momentum in the vacuum tank of the NA48 experiment at CERN. We find one event within a lifetime range of $10^{-9}-10^{-3}$s and another one between $10^{-10}-10^{-9}$s. Both events are consistent with the expected background from neutrons in the beam, produced by 450 GeV protons impinging on the Be targets, which interact with the residual air in the tank. From these data we give limits on the production of the hypothetical $g\widetilde{g}$ bound state, the $R^0$ hadron, and its $R^0\rightarrow\eta\widetilde{\gamma}$ decay in the $R^0$ mass range between 1 and 5~GeV

On the role of single regiodefects and polydispersity in regioregular poly(3-hexylthiophene): Defect distribution, synthesis of defect-free chains, and a simple model for the determination of crystallinity

Contains fulltext : 93990.pdf (publisher's version ) (Open Access