Co atoms on Bi2_{2}Se3_{3} revealing a coverage dependent spin reorientation transition

We investigate Co nanostructures on Bi$_{2}$Se$_{3}$ by means of scanning tunneling microscopy and spectroscopy [STM/STS], X-ray absorption spectroscopy [XAS], X-ray magnetic dichroism [XMCD] and calculations using the density functional theory [DFT]. In the single adatom regime we find two different adsorption sites by STM. Our calculations reveal these to be the fcc and hcp hollow sites of the substrate. STS shows a pronounced peak for only one species of the Co adatoms indicating different electronic properties of both types. These are explained on the basis of our DFT calculations by different hybridizations with the substrate. Using XMCD we find a coverage dependent spin reorientation transition from easy-plane toward out-of-plane. We suggest clustering to be the predominant cause for this observation.Comment: 10 pages, 4 figure

Magnetic properties of substitutional Mn in (110) GaAs surface and subsurface layers

Motivated by recent STM experiments, we present a theoretical study of the electronic and magnetic properties of the Mn-induced acceptor level obtained by substituting a single Ga atom in the (110) surface layer of GaAs or in one of the atoms layers below the surface. We employ a kinetic-exchange tight-binding model in which the relaxation of the (110) surface is taken into account. The acceptor wave function is strongly anisotropic in space and its detailed features depend on the depth of the sublayer in which the Mn atom is located. The local-density-of-states (LDOS) on the (110) surface associated with the acceptor level is more sensitive to the direction of the Mn magnetic moment when the Mn atom is located further below the surface. We show that the total magnetic anisotropy energy of the system is due almost entirely to the dependence of the acceptor level energy on Mn spin orientation, and that this quantity is strongly dependent on the depth of the Mn atom.Comment: 14 pages, 13 figure

Magnetic Scanning Tunneling Microscopy with a Two-Terminal Non-Magnetic Tip: Quantitative Results

We report numerical simulation result of a recently proposed \{P. Bruno, Phys. Rev. Lett {\bf 79}, 4593, (1997)\} approach to perform magnetic scanning tunneling microscopy with a two terminal non-magnetic tip. It is based upon the spin asymmetry effect of the tunneling current between a ferromagnetic surface and a two-terminal non-magnetic tip. The spin asymmetry effect is due to the spin-orbit scattering in the tip. The effect can be viewed as a Mott scattering of tunneling electrons within the tip. To obtain quantitative results we perform numerical simulation within the single band tight binding model, using recursive Green function method and Landauer-B\"uttiker formula for conductance. A new model has been developed to take into account the spin-orbit scattering off the impurities within the single-band tight-binding model. We show that the spin-asymmetry effect is most prominent when the device is in quasi-ballistic regime and the typical value of spin asymmetry is about 5%.Comment: 5 pages, Late

Direct comparison between potential landscape and local density of states in a disordered two-dimensional electron system

The local density of states (LDOS) of the adsorbate induced two-dimensional electron system (2DES) on n-InAs(110) is studied by low-temperature scanning tunneling spectroscopy. The LDOS exhibits irregular structures with fluctuation lengths decreasing with increasing energy. Fourier transformation reveals that the k-values of the unperturbed 2DES dominate the LDOS, but additional lower k-values contribute significantly. To clarify the origin of the additional k-space intensity, we measure the potential landscape of the same 2DES area with the help of the tip induced quantum dot. This allows to calculate the expected LDOS from the single particle Schroedinger equation and to directly compare it with the measured one. Reasonable correspondance between calculated and measured LDOS is found.Comment: 7 pages, 4 figures, submitted to PR

Correction of systematic errors in scanning tunnelling spectra on semiconductor surfaces: the energy gap of Si(111)-7x7 at 0.3 K

The investigation of the electronic properties of semiconductor surfaces using scanning tunnelling spectroscopy (STS) is often hindered by non-equilibrium transport of the injected charge carriers. We propose a correction method for the resulting systematic errors in STS data, which is demonstrated for the well known Si(111)-(7x7) surface. The surface has an odd number of electrons per surface unit cell and is metallic above 20 K. We observe an energy gap in the ground state of this surface by STS at 0.3 K. After correction, the measured width of the gap is (70 +- 15) meV which is compatible with previous less precise estimates. No sharp peak of the density of states at the Fermi level is observed, in contrast to proposed models for the Si(111)-(7x7) surface.Comment: 10 pages, 4 figure

Spin-sensitive shape asymmetry of adatoms on noncollinear magnetic substrates

The spin-resolved density of states of Co atoms on a noncollinear magnetic support displays a distinct shape contrast, which is superimposed on the regular height contrast in spin-polarized scanning tunneling microscopy. The apparent atom height follows the well-known cosine dependence on the angle formed by the tip and adatom local magnetization directions, whereas the shape contrast exhibits a sine dependence. We explain this effect in terms of a noncollinear spin density induced by the substrate, which in our case is the spin spiral of the Mn monolayer on W(110). The two independent contrast channels, apparent height and shape, are identified with the Co magnetization projections onto two orthogonal axes. As a result, all components of the overall atom magnetic moment vector can be determined with a single spin-sensitive tip in the absence of an external magnetic field. This result should be general for any atom deposited on noncollinear magnetic layers

Intra- and Interband Electron Scattering in the Complex Hybrid Topological Insulator Bismuth Bilayer on Bi2_2Se3_3

The band structure, intra- and interband scattering processes of the electrons at the surface of a bismuth-bilayer on Bi$_2$Se$_3$ have been experimentally investigated by low-temperature Fourier-transform scanning tunneling spectroscopy. The observed complex quasiparticle interference patterns are compared to a simulation based on the spin-dependent joint density of states approach using the surface-localized spectral function calculated from first principles as the only input. Thereby, the origin of the quasiparticle interferences can be traced back to intraband scattering in the bismuth bilayer valence band and Bi$_2$Se$_3$ conduction band, and to interband scattering between the two-dimensional topological state and the bismuth-bilayer valence band. The investigation reveals that the bilayer band gap, which is predicted to host one-dimensional topological states at the edges of the bilayer, is pushed several hundred milli-electronvolts above the Fermi level. This result is rationalized by an electron transfer from the bilayer to Bi$_2$Se$_3$ which also leads to a two-dimensional electron state in the Bi$_2$Se$_3$ conduction band with a strong Rashba spin-splitting, coexisting with the topological state and bilayer valence band.Comment: 11 pages, 5 figure

Jahn-Teller stabilization of a "polar" metal oxide surface: Fe3O4(001)

Using ab initio thermodynamics we compile a phase diagram for the surface of Fe3O4(001) as a function of temperature and oxygen pressures. A hitherto ignored polar termination with octahedral iron and oxygen forming a wave-like structure along the [110]-direction is identified as the lowest energy configuration over a broad range of oxygen gas-phase conditions. This novel geometry is confirmed in a x-ray diffraction analysis. The stabilization of the Fe3O4(001)-surface goes together with dramatic changes in the electronic and magnetic properties, e.g., a halfmetal-to-metal transition.Comment: 4 pages, 4 figure