Current dependence of grain boundary magnetoresistance in La_0.67Ca_0.33MnO_3 films

We prepared epitaxial ferromagnetic manganite films on bicrystal substrates by pulsed laser ablation. Their low- and high-field magnetoresistance (MR) was measured as a function of magnetic field, temperature and current. At low temperatures hysteretic changes in resistivity up to 70% due to switching of magnetic domains at the coercitive field are observed. The strongly non-ohmic behavior of the current-voltage leads to a complete suppression of the MR effect at high bias currents with the identical current dependence at low and high magnetic fields. We discuss the data in view of tunneling and mesoscale magnetic transport models and propose an explicit dependence of the spin polarization on the applied current in the grain boundary region.Comment: 5 pages, to appear in J. Appl. Phy

Epitaxy and magnetotransport of Sr_2FeMoO_6 thin films

By pulsed-laser deposition epitaxial thin films of Sr_2FeMoO_6 have been pre- pared on (100) SrTiO_3 substrates. Already for a deposition temperature of 320 C epitaxial growth is achieved. Depending on deposition parameters the films show metallic or semiconducting behavior. At high (low) deposition temperature the Fe,Mo sublattice has a rock-salt (random) structure. The metallic samples have a large negative magnetoresistance which peaks at the Curie temperature. The magnetic moment was determined to 4 mu_B per formula unit (f.u.), in agreement with the expected value for an ideal ferrimagnetic arrangement. We found an ordinary Hall coefficient of -6.01x10^{-10} m^3/As at 300 K, corresponding to an electronlike charge-carrier density of 1.3 per Fe,Mo-pair. In the semiconducting films the magnetic moment is reduced to 1 mu_B/f.u. due to disorder in the Fe,Mo sublattice. In low fields an anomalous holelike contribution dominates the Hall voltage, which vanishes at low temperatures for the metallic films only.Comment: Institute of Physics, University of Mainz, Germany, 4 pages, including 5 pictures and 1 Table, submitted to Phys. Rev.

Charge carrier density collapse in La_0.67Ca_0.33MnO_3 and La_0.67Sr_0.33MnO_3 epitaxial thin films

We measured the temperature dependence of the linear high field Hall resistivity of La_0.67Ca_0.33MnO_3 (T_C=232K) and La_0.67Sr_0.33MnO_3 (T_C=345K) thin films in the temperature range from 4K up to 360K in magnetic fields up to 20T. At low temperatures we find a charge carrier density of 1.3 and 1.4 holes per unit cell for the Ca- and Sr-doped compound, respectively. In this temperature range electron-magnon scattering contributes to the longitudinal resistivity. At the ferromagnetic transition temperature T_C a dramatic drop in the number of current carriers $n$ down to 0.6 holes per unit cell, accompanied by an increase in unit cell volume, is observed. Corrections of the Hall data due to a non saturated magnetic state will lead a more pronounced charge carrier density collapse.Comment: 5 pages, 5 EPS figures, submitted to Eur. Phys. J.

Epitaxial growth and magnetic properties of Sr2CrReO6 thin films

The double perovskite Sr2CrReO6 is an interesting material for spintronics, showing ferrimagnetism up to 635 K with a predicted high spin polarization of about 86%. We fabricated Sr2CrReO6 epitaxial films by pulsed laser deposition on (001)-oriented SrTiO3 substrates. Phase-pure films with optimum crystallographic and magnetic properties were obtained by growing at a substrate temperature of 700 degree C in pure O2 of 6.6x10-4 mbar. The films are c-axis oriented, coherently strained, and show less than 20% anti-site defects. The magnetization curves reveal high saturation magnetization of 0.8 muB per formula unit and high coercivity of 1.1 T, as well as a strong magnetic anisotropy.Comment: accepted for publicatio

Role of Orbital Degeneracy in Double Exchange Systems

We investigate the role of orbital degeneracy in the double exchange (DE) model. In the $J_{H}\to\infty$ limit, an effective generalized ``Hubbard'' model incorporating orbital pseudospin degrees of freedom is derived. The model possesses an exact solution in one- and in infinite dimensions. In 1D, the metallic phase off ``half-filling'' is a Luttinger liquid with pseudospin-charge separation. Using the $d=\infty$ solution for our effective model, we show how many experimental observations for the well-doped ($x\simeq 0.3$) three-dimensional manganites $La_{1-x}Sr_{x}MnO_{3}$ can be qualitatively explained by invoking the role of orbital degeneracy in the DE model.Comment: 8 pages, 2 figures, submitted to Phys. Rev.

A model for spin-polarized transport in perovskite manganite bi-crystal grain boundaries

We have studied the temperature dependence of low-field magnetoresistance and current-voltage characteristics of a low-angle bi-crystal grain boundary junction in perovskite manganite La_{2/3}Sr_{1/3}MnO_3 thin film. By gradually trimming the junction we have been able to reveal the non-linear behavior of the latter. With the use of the relation M_{GB} \propto M_{bulk}\sqrt{MR^*} we have extracted the grain boundary magnetization. Further, we demonstrate that the built-in potential barrier of the grain boundary can be modelled by V_{bi}\propto M_{bulk}^2 - M_{GB}^2. Thus our model connects the magnetoresistance with the potential barrier at the grain boundary region. The results indicate that the band-bending at the grain boundary interface has a magnetic origin.Comment: 9 pages, 5 figure

Grain boundary effects on magnetotransport in bi-epitaxial films of La0.7_{0.7}Sr0.3_{0.3}MnO3_3

The low field magnetotransport of La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO) films grown on SrTiO$_3$ substrates has been investigated. A high qualtity LSMO film exhibits anisotropic magnetoresistance (AMR) and a peak in the magnetoresistance close to the Curie temperature of LSMO. Bi-epitaxial films prepared using a seed layer of MgO and a buffer layer of CeO$_2$ display a resistance dominated by grain boundaries. One film was prepared with seed and buffer layers intact, while a second sample was prepared as a 2D square array of grain boundaries. These films exhibit i) a low temperature tail in the low field magnetoresistance; ii) a magnetoconductance with a constant high field slope; and iii) a comparably large AMR effect. A model based on a two-step tunneling process, including spin-flip tunneling, is discussed and shown to be consistent with the experimental findings of the bi-epitaxial films.Comment: REVTeX style; 14 pages, 9 figures. Figure 1 included in jpeg format (zdf1.jpg); the eps was huge. Accepted to Phys. Rev.

Structural and doping effects in the half-metallic double perovskite A2A_2CrWO6_6

he structural, transport, magnetic and optical properties of the double perovskite $A_2$CrWO$_6$ with $A=\text{Sr, Ba, Ca}$ have been studied. By varying the alkaline earth ion on the $A$ site, the influence of steric effects on the Curie temperature $T_C$ and the saturation magnetization has been determined. A maximum $T_C=458$ K was found for Sr$_2$CrWO$_6$ having an almost undistorted perovskite structure with a tolerance factor $f\simeq 1$. For Ca$_2$CrWO$_6$ and Ba$_2$CrWO$_6$ structural changes result in a strong reduction of $T_C$. Our study strongly suggests that for the double perovskites in general an optimum $T_C$ is achieved only for $f \simeq 1$, that is, for an undistorted perovskite structure. Electron doping in Sr$_2$CrWO$_6$ by a partial substitution of Sr$^{2+}$ by La$^{3+}$ was found to reduce both $T_C$ and the saturation magnetization $M_s$. The reduction of $M_s$ could be attributed both to band structure effects and the Cr/W antisites induced by doping. Band structure calculations for Sr$_2$CrWO$_6$ predict an energy gap in the spin-up band, but a finite density of states for the spin-down band. The predictions of the band structure calculation are consistent with our optical measurements. Our experimental results support the presence of a kinetic energy driven mechanism in $A_2$CrWO$_6$, where ferromagnetism is stabilized by a hybridization of states of the nonmagnetic W-site positioned in between the high spin Cr-sites.Comment: 14 pages, 10 figure

Extrinsic Magnetotransport Phenomena in Ferromagnetic Oxides

This review is focused on extrinsic magnetotransport effects in ferromagnetic oxides. It consists of two parts; the second part is devoted to an overview of experimental data and theoretical models for extrinsic magnetotransport phenomena. Here a critical discussion of domain-wall scattering is given. Results on surfacial and interfacial magnetism in oxides are presented. Spin-polarized tunnelling in ferromagnetic junctions is reviewed and grain-boundary magnetoresistance is interpreted within a model of spin-polarized tunnelling through natural oxide barriers. The situation in ferromagnetic oxides is compared with data and models for conventional ferromagnets. The first part of the review summarizes basic material properties, especially data on the spin-polarization and evidence for half-metallicity. Furthermore, intrinsic conduction mechanisms are discussed. An outlook on the further development of oxide spin-electronics concludes this review.Comment: 133 pages, 47 figures, submitted to Rep. Prog. Phy