The Commission: boxed in and constrained, but still an engine of integration

In the debate about the impact of the eurozone crisis on the EU’s institutional balance, antagonists have often argued past each other. Supporters of the new intergovernmentalism contend that the European Council has supplanted the European Commission in policy leadership, while scholars who hold that the EU executive has been a winner of the crisis highlight the new management functions it has acquired. This article argues, first, that an accurate assessment of the institutional balance requires a more global evaluation of the Commission, acknowledging external and internal dynamics. Second, it contends that the crisis did not cause a Commission retreat but accelerated a process already underway that finds its origins in the presidentialisation of policy control. The adoption of fewer legislative proposals during the crisis was due to the ability and choice of a strong president to focus the attention on crisis-related areas. The broader lesson is that rather than marking a further step in the decline of the Commission, the crisis reveals how the centralisation of power within the institution and its expanded management duties have enhanced its capacity to take strategic action. The Commission’s role as an engine of integration will therefore endure, but in a different guise

Institutionen im Wettbewerb ordnungstheoretische Anmerkungen zum Systemwettbewerb in Europa

UuStB Koeln(38)-950107773 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEDEGerman

Wettbewerb der Systeme zur Verwirklichung des Binnenmarktprogramms?

Available from Bibliothek des Instituts fuer Weltwirtschaft, ZBW, D-21400 Kiel W 929 (95.03) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEDEGerman

The economic constitution of the European Community: from "Rome" to "Maastricht"

SIGLEAvailable from Bibliothek des Instituts fuer Weltwirtschaft, ZBW, D-21400 Kiel W 929 (94.03) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekDEGerman

Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6

The growth of intrinsic SiGe and, n- and p-type doping of Si and SiGe layers was studied using a Reduced Pressure Chemical Vapor Deposition AIXTRON TRICENT® cluster tool. Most emphasis was placed on the growth kinetics in the low temperature regime of 450–600 °C which is characterized by surface limited reactions. A low growth activation energy of 0.667 eV was achieved by using Si2H6 and Ge2H6 precursors. Fully strained SiGe layers with Ge contents up to 53% at a record thickness of 29 nm were grown at a very low growth temperature of 450 °C. The dopant incorporation in Si strongly increases with the B2H6 flux but saturates rapidly with increasing PH3 flow. High dopant concentrations of 1.1 × 1020 cm−3 and 1 × 1021 cm−3 were obtained for Si:P and Si:B doping, respectively, at a growth temperature of 600 °C. For Si0.56Ge0.44 layers the maximum dopant concentrations achieved were 5 × 1020 cm−3 for P at 500 °C and 4 × 1020 cm−3 for B doping at 600 °C