Who published in Chinese predatory journals? A study on the authorship of blacklist journals

This poster reported a study which examined 93,653 authorship records of 67 predatory journals listed in a well-known blacklist in China. By collecting and analyzing each author's full name and affiliated institution information, their organization distribution were studied. Then the authorship dataset was compared and matched up with the records in the biggest full-text academic literature database China National Knowledge Infrastructure (CNKI) to identify each authors' publishing productivity (number of publications) and influence (number of downloads). The results showed that those who publish in predatory journals are young and inexperienced researchers from teaching-intensive universities all over the country, and most of them are from eastern coastal and developed areas of mainland China. The study also showed that some productive and influential researchers had the experience of publishing in predatory journals

Beyond ANT and Sociomateriality: Explore Symbolic Power to Information System Adoption

IS adoption is inherently a social practice shaped by the immediate social context but capital power does not have a stronger presence in ANT and sociomateriality. The paper describes Bourdieu’s practice theory and suggests that by this lens we can better understand IS adoption (e.g., implementation of MRP II/ERP/ERP II) as symbolic capital changing power relations in an adopted organization. Such shift of power relations is viewed as accepting relation thinking mode and critical realism in IS adoption. From symbolic power perspective, character status and role prestige is ascribed to IS. Implementation of an IS are configuration of power relation designed by IS software vendors. By exploring IS as social inclusion and distinction, we review Ivy University’s Oracle ERP case beyond ANT and Social-materiality theory. We also applied symbolic capital of Bourdieu’s theory to explain“ERP adoption means find dying”by Liu Chuanzhi in Chinese Legend Company

Intrinsic localized modes in a two-dimensional checkerboard ferromagnetic lattice

An analytical work on intrinsic localized modes in a two-dimensional Heisenberg ferromagnet on the checkerboard lattice is presented. Taking advantage of an asymptotic method, the governing lattice dynamical equations are reduced to one (2+1) -dimensional nonlinear Schr\"odinger. In our work, we obtain two types of nonlinear localized mode solutions, namely, Brillouin zone center modes and Brillouin zone corner modes. The occurrence conditions for these intrinsic localized modes are given in detail. Especially, we find that the competition between the Dzialozinskii-Moriy interaction and the next-nearest neighbor interaction of the checkerboard ferromagnet has an effect on the local structure of the Brillouin zone corner acoustic mode

Electroluminescent displays by sol-gel process

Thin film electroluminescent displays are attractive commercially as well as scientifically and of technological interest in the design of large area, flat screen displays. The interest in developing reliable luminescent materials for applications on flat panel displays has produced a considerable research effort in this area. This effort has been directed to the techniques of film deposition as well as to the different types of materials and dopants used as active components on electroluminescent devices. Applications of ZnS and ZnS:Mn films in electroluminescent displays have been increasing examined. Mn-doped ZnS is one of the most studied materials for luminescent devices. Zinc sulphide is a semiconductor suitable to be used as host matrix for a large variety of dopants because of its wide energy band gap. The sol-gel process is now well accepted as a technology for preparing thin films. The advantages of the sol-gel process are that it is simple and inexpensive and has the general advantages of producing large area, high purity, homogeneous films at relative low temperatures. Electroluminescent thin film display structures require the fabrication of insulators, transparent conductors and electroluminescent materials. In this project all of these materials have been produced using the sol-gel technique. Insulating films of silicon dioxide and aluminium oxide were fabricated from silicon and aluminium alkoxides respectively and their characteristics measured. Transparent conductors were produced from aluminium-doped zinc oxide using a zinc acetate precursor. The dependence of electrical characteristics upon aluminum concentration in the films and upon post-deposition heat treatment in vacuum was examined. The effect of changing the aluminum-to-zinc ratio from 0-4.5 at.% (atomic percent) and heat treatment temperature in vacuum have been thoroughly investigated. Resistivities of (7- 10)xl0~4 Qcm have been achieved for ZnO:Al films with Al/Zn 0.8 at.% heated to 450°C in vacuum. Transmittance in the visible region is above 90%. Similar results were obtained using aluminum chloride and aluminum nitrate as the aluminum precursor. Electroluminescent films of zinc sulphide were produced by a novel method involving sol-gel deposition of zinc oxide and a conversion technique where the films were annealed in a sulphiding atmosphere to produce zinc sulphide. The characteristics of these films were investigated using scanning electron microscopy, X-ray diffraction, infrared spectroscopy and optical transmission spectroscopy. Electroluminescent devices were fabricated using manganese and terbium doped zinc sulphide and the luminescent characteristics of the displays were measured as a function of dopant concentration, applied voltage, driving frequency and insulator type. It is has been demonstrated that the sol-gel technique is a simple, cheap method for the construction of electroluminescent displays

Weak topological insulators induced by the inter-layer coupling: A first-principles study of stacked Bi2TeI

Based on first-principles calculations, we predict Bi2TeI, a stoichiometric compound synthesized, to be a weak topological insulator (TI) in layered subvalent bismuth telluroiodides. Within a bulk energy gap of 80 meV, two Dirac-cone-like topological surface states exist on the side surface perpendicular to BiTeI layer plane. These Dirac cones are relatively isotropic due to the strong inter-layer coupling, distinguished from those of previously reported weak TI candidates. Moreover, with chemically stable cladding layers, the BiTeI-Bi2-BiTeI sandwiched structure is a robust quantum spin Hall system, which can be obtained by simply cleaving the bulk Bi2TeI.Comment: 4.5 pages, 4 figure

On the electronic structure of silicene on Ag substrate: strong hybridization effects

The electronic structure of the recently synthesised (3x3) reconstructed silicene on (4x4) Ag(111) is investigated by first-principles calculations. New states emerge due to the strong hybridization between silicene and Ag. Analyzing the nature and composition of these hybridized states, we show that i) it is possible to clearly distinguish them from states coming from the Dirac cone of free-standing silicene or from the sp-bands of bulk Ag and ii) assign their contribution to the description of the linearly dispersing band observed in photoemission. Furthermore, we show that silicene atoms contribute to the Fermi level, which leads to similar STM patterns as observed below or above the Fermi level. Our findings are crucial for the proper interpretation of experimental observations.Comment: 8 pages, 3 figures including supplementary materia