Multi-Patterned Dynamics of Mitochondrial Fission and Fusion in a Living Cell

Mitochondria are highly-dynamic organelles, but it is challenging to monitor quantitatively their dynamics in a living cell. Here we developed a novel approach to determine the global occurrence of mitochondrial fission and fusion events in living human epithelial cells (Hela) and mouse embryonic fibroblast cells (MEF). Distinct patterns of sequential events including fusion followed by fission (Fu-Fi), the so-called “kiss and run” model previously described, fission followed by fusion (Fi-Fu), fusion followed by fusion (Fu-Fu), and fission followed by fission (Fi-Fi) were observed concurrently. The paired events appeared in high frequencies with short lifetimes and large sizes of individual mitochondria, as compared to those for unpaired events. The high frequencies of paired events were found to be biologically significant. The presence of membrane uncoupler CCCP enhanced the frequency of paired events (from both Fu-Fi and Fi-Fu patterns) with a reduced mitochondrial size. Knock-out of mitofusin protein Mfn1 increased the frequency of fission with increased lifetime of unpaired events whereas deletion of both Mfn1 and Mfn2 resulted in an instable dynamics. These results indicated that the paired events were dominant but unpaired events were not negligible, which provided a new insight into mitochondrial dynamics. In addition to kiss and run model of action, our data suggest that, from a global visualization over an entire cell, multiple patterns of action appeared in mitochondrial fusion and fission

Towards a Large-Area Freestanding Single-Crystal Ferroelectric BaTiO3 Membrane

The fabrication and transfer of freestanding single-crystal ferroelectric membranes deserve intensive investigations as to their potential applications in flexible wearable devices, such as flexible data storage devices and varied sensors in E-skin configurations. In this report, we have shown a comprehensive study approach to the acquisition of a large-area freestanding single-crystal ferroelectric BaTiO3 by the Sr3Al2O6 scarification layer method. By controlling the thickness of the BaTiO3 and Sr3Al2O6, the exposed area of the Sr3Al2O6 interlayer, and the utilization of an additional electrode La2/3Sr1/3MnO3 layer, the crack density on the freestanding BaTiO3 can be dramatically decreased from 24.53% to almost none; then, a more than 700 × 530 μm2 area high-quality freestanding BaTiO3 membrane can be achieved. Our results offer a clear and repeatable technology routine for the acquisition of a flexible large-area ferroelectric membrane, which should be instructive to other transition metal oxides as well. Our study can confidently boost flexible device fabrication based on single-crystal transition metal oxides

Nonvolatile multistates memories for high-density data storage

In the current information age, the realization of memory devices with energy efficient design, high storage density, nonvolatility, fast access, and low cost is still a great challenge. As a promising technology to meet these stringent requirements, nonvolatile multistates memory (NMSM) has attracted lots of attention over the past years. Owing to the capability to store data in more than a single bit (0 or 1), the storage density is dramatically enhanced without scaling down the memory cell, making memory devices more efficient and less expensive. Multistates in a single cell also provide an unconventional in-memory computing platform beyond the Von Neumann architecture and enable neuromorphic computing with low power consumption. In this review, an in-depth perspective is presented on the recent progress and challenges on the device architectures, material innovation, working mechanisms of various types of NMSMs, including flash, magnetic random-access memory (MRAM), resistive random-access memory (RRAM), ferroelectric random-access memory (FeRAM), and phase-change memory (PCM). The intriguing properties and performance of these NMSMs, which are the key to realizing highly integrated memory hierarchy, are discussed and compared.Ministry of Education (MOE)Accepted versio

In situ TEM observation of resistance switching in titanate based device.

After decades of efforts, the research on resistance switching (RS) behavior in transition metal oxides has shifted to the stage of verifying the proposed models by direct experimental evidences. In this paper, RS behavior and oxygen content variation of La0.85Sr0.15TiO3/SrTiO3:Nb (LSTO/STON) were investigated by in situ transmission electron microscopy observation and in situ electron energy loss spectrum characterization under external electric field. The oxygen content fluctuation adjusted by applied bias has been investigated and the observed results imply the conductive channels should be formed by the oxygen vacancy at the Pt/LSTO interface. Moreover, in situ TEM characterization displays the advantage - to reveal the origin of various RS behaviors

In situ TEM observation of resistance switching in titanate based device.

After decades of efforts, the research on resistance switching (RS) behavior in transition metal oxides has shifted to the stage of verifying the proposed models by direct experimental evidences. In this paper, RS behavior and oxygen content variation of La0.85Sr0.15TiO3/SrTiO3:Nb (LSTO/STON) were investigated by in situ transmission electron microscopy observation and in situ electron energy loss spectrum characterization under external electric field. The oxygen content fluctuation adjusted by applied bias has been investigated and the observed results imply the conductive channels should be formed by the oxygen vacancy at the Pt/LSTO interface. Moreover, in situ TEM characterization displays the advantage - to reveal the origin of various RS behaviors

Enhanced Piezoresponse and Dielectric Properties for Ba1-XSrXTiO3 Composition Ultrathin Films by the High-Throughput Method

The stacked single-unit cell Ba1-xSrxTiO3 (BSTO) thin film designed by the high-throughput method is fabricated by layer-by-layer deposition by laser molecular beam epitaxy, and its ferroelectric and dielectric characteristics as a function of Sr concentration are comprehensively investigated. The permittivity of BSTO exhibits a monotonous increase by Sr with a plateau in the region of 14% < Sr < 85%. Meanwhile, at the low Sr doping regime, the piezoelectric response has been discovered, and the maximum piezoresponse and d33 can reach approximately 139.05 pm and 88 pm/V once an appropriate Ba/Sr ratio is formed, exhibiting a coexistence of a dielectric property and giant piezoresponse. This effective piezoelectric constant d33 value is significantly larger than the conventional chemical doping scenarios, suggesting that the intra-plane interaction is crucial for designing future promising dielectric and ferroelectric thin films via high-throughput technologies

Bulk spin torque driven perpendicular magnetization switching in L1 0 FePt

International audienceModern information technology demands advanced storage material and efficient data writing scheme. Inherent with a superior perpendicular magnetocrystalline anisotropy, the FePt in L1 0 phase envisions magnetic storage with ultrahigh capacity. However, reversing FePt magnetic state and therefore the encoded information has been proven to be extremely difficult. Here, we demonstrate that an electric current is capable to exert a large spin torque on a L1 0 FePt magnet, which ultimately leads to reversible magnetization switching through domain nucleation and expansion in an efficient and simple manner