High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor

In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 �m. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions

Temperature-Driven Structural and Morphological Evolution of Zinc Oxide Nano-Coalesced Microstructures and Its Defect-Related Photoluminescence Properties

In this paper, we address the synthesis of nano-coalesced microstructured zinc oxide thin films via a simple thermal evaporation process. The role of synthesis temperature on the structural, morphological, and optical properties of the prepared zinc oxide samples was deeply investigated. The obtained photoluminescence and X-ray photoelectron spectroscopy outcomes will be used to discuss the surface structure defects of the prepared samples. The results indicated that the prepared samples are polycrystalline in nature, and the sample prepared at 700 °C revealed a tremendously c-axis oriented zinc oxide. The temperature-driven morphological evolution of the zinc oxide nano-coalesced microstructures was perceived, resulting in transformation of quasi-mountain chain-like to pyramidal textured zinc oxide with increasing the synthesis temperature. The results also impart that the sample prepared at 500 °C shows a higher percentage of the zinc interstitial and oxygen vacancies. Furthermore, the intensity of the photoluminescence emission in the ultraviolet region was enhanced as the heating temperature increased from 500 °C to 700 °C. Lastly, the growth mechanism of the zinc oxide nano-coalesced microstructures is discussed according to the reaction conditions

Photodeposition of Ag Nanocrystals onto TiO2 Nanotube Platform for Enhanced Water Splitting and Hydrogen Gas Production

Current work reports the study of Ag nanocrystals (NCs) decorated doubly anodized (DA) TiO2 nanotubes (NTs) thin film as an efficient photoelectrode material for water splitting and photocatalytic hydrogen gas production. DA process has been shown to be capable of producing less defective NTs and creating additional spacious gaps in between NT bundles to allow efficient and uniform integration of Ag NCs. By employing photoreduction method, Ag NCs can be deposited directly onto NTs, where the size and density of coverage can be maneuvered by merely varying the concentration of Ag precursors. Field emission scanning electron microscope (FESEM) images show that the Ag NCs with controllable size are homogeneously decorated onto the walls of NTs with random yet uniform distribution. X-ray diffraction (XRD) results confirm the formation of anatase TiO2 NTs and Ag NCs, which can be well indexed to standard patterns. The decoration of metallic Ag NCs onto the surface of NTs demonstrates a significant enhancement in the photoconversion efficiency as compared to that of pristine TiO2 NTs. Additionally, the as-prepared nanocomposite film also shows improved efficiency when used as a photocatalyst platform in the production of hydrogen gas. Such improvement in the performance of water splitting and photocatalytic hydrogen gas production activity can be credited to the surface plasmonic resonance of Ag NCs present on the surface of the NTs, which renders improved light absorption and better charge separation. The current work can serve as a model of study for designing more advanced nanoarchitecture photoelectrode for renewable energy application

High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor

In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions

High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor

In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions